Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
US-11784041-B2 · Oct 10, 2023 · US
US2022194963A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022194963-A1 |
| Application number | US-202217692998-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 11, 2022 |
| Priority date | Nov 8, 2016 |
| Publication date | Jun 23, 2022 |
| Grant date | — |
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Metal complexes including cyclopentadienyl ligands and methods of using such metal complexes to prepare metal-containing films are provided.
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1 .- 72 . (canceled) 73 . A metal complex corresponding in structure to Formula I: [(R 1 ) n Cp] 2 M 1 L 1 (I) wherein M 1 is yttrium or lanthanum; each R 1 is independently C 1 -C 5 -alkyl or silyl; n is 1, 2, 3, 4, or 5; Cp is cyclopentadienyl ring; and L 1 is selected from the group consisting of: NR 2 R 3 ; N(SiR 4 R 5 R 6 ) 2 ; 3,5-R 7 R 8 —C 3 HN 2 ; 1-(R 32 )C 3 H 4 ; 1-R 33 -3-R 34 —C 3 H 3 ; and R 35 ,R 36 —C 3 HO 2 ; wherein R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or C 1 -C 5 -alkyl; and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently alkyl or silyl; wherein when M 1 is yttrium and L 1 is 3,5-R 7 R 8 —C 3 HN 2 , then R 1 is C 1 -C 5 -alkyl or silyl; and wherein when M 1 is yttrium and L 1 is N(SiR 4 R 5 R 6 ) 2 , then n is 1, 2, 3, or 4. 74 . The metal complex of claim 73 , wherein each R 1 is independently C 1 -C 4 -alkyl or silyl, R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or C 1 -C 5 -alkyl, and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently C 1 -C 4 -alkyl or silyl. 75 . The metal complex of claim 73 , wherein each R 1 is independently C 1 -C 4 -alkyl or silyl; and L 1 is 3,5-R 7 R 8 —C 3 HN 2 or R 35 ,R 36 —C 3 HO 2 . 76 . The metal complex of claim 73 , wherein the complex is: Y(MeCp) 2 (3-methyl-5-pentyl-pyrazolate) or Y(MeCp) 2 (6-methyl-2,4-heptanedionate). 77 . A method of forming a metal-containing film by a vapor deposition process, the method comprising vaporizing at least one metal complex corresponding in structure to Formula I: (R 1 Cp) 2 M 1 L 1 (I) wherein M 1 is yttrium or lanthanum; each R 1 is independently C 1 -C 5 -alkyl or silyl; Cp is cyclopentadienyl ring; and L 1 is selected from the group consisting of NR 2 R 3 ; N(SiR 4 R 5 R 6 ) 2 ; 3,5-R 7 R 8 —C 3 HN 2 ; 1-(R 32 )C 3 H 4 ; 1-R 33 -3-R 34 —C 3 H 3 ; and R 35 ,R 36 —C 3 HO 2 ; wherein R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or C 1 -C 5 -alkyl; and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently alkyl or silyl. 78 . The method of claim 77 , wherein each R 1 is independently C 1 -C 4 -alkyl or silyl; R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are each independently hydrogen or C 1 -C 5 -alkyl; and R 32 , R 33 , R 34 , R 35 , and R 36 are each independently C 1 -C 4 -alkyl or silyl 3 . 79 . The method of claim 77 , wherein each R 1 is independently C 1 -C 4 -alkyl or silyl; and L 1 is 3,5-R 7 R 8 —C 3 HN 2 or R 35 ,R 36 —C 3 HO 2 . 80 . The method of claim 77 , wherein the complex is: Y(MeCp) 2 (3,5-methyl-5-pentyl-pyrazolate) or Y(MeCp) 2 (6-methyl-2,4-heptanedionate). 81 . The method of claim 77 , wherein the vapor deposition process is chemical vapor deposition or the vapor deposition process is atomic layer deposition. 82 . The method of claim 77 , wherein the metal complex is delivered to a substrate in pulses alternating with pulses of an oxygen source, wherein the oxygen source is selected from the group consisting of H 2 O, H 2 O 2 , O 2 , ozone, air, i-PrOH, t-BuOH, and N 2 O. 83 . The method of claim 77 , further comprising vaporizing at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone, and a combination of any two or more thereof, wherein the hydrazine is hydrazine (N 2 H 4 ) or N,N-dimethylhydrazine.
the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title
deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title
in the presence of a plasma [PECVD] · CPC title
characterized by the use of precursors specially adapted for ALD · CPC title
from metallo-organic compounds · CPC title
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