Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2022150429-A1
Application number	US-202217585109-A
Country	US
Kind code	A1
Filing date	Jan 26, 2022
Priority date	Jul 3, 2013
Publication date	May 12, 2022
Grant date	—

Abstract

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

First claim

1 - 16 . (canceled)

17 . A light detecting device, comprising:
a semiconductor substrate including a first plane receiving incident light and a second plane opposite to the first plane in a cross-sectional view; a photoelectric conversion region disposed in the semiconductor substrate; a first pixel-separation trench disposed in the semiconductor substrate in the cross-sectional view; a second pixel-separation trench disposed adjacent to the first pixel-separation trench in the cross-sectional view; a first trench disposed between the first pixel-separation trench and the second pixel-separation trench in the cross-sectional view; and a first film disposed above the first plane of the semiconductor substrate in the cross-sectional view, wherein a depth of the first trench is shallower than a depth of the first pixel-separation trench and a depth of the second pixel-separation trench in the cross-sectional view, wherein the first film is disposed in the first trench, wherein the first film includes a first concave portion disposed above the first trench in the cross-sectional view.

18 . The light detecting device of claim 17 , wherein the photoelectric conversion region is disposed between the first pixel-separation trench and the second pixel-separation trench in the cross-sectional view, wherein the first trench is disposed above the photoelectric conversion region in the cross-sectional view.

19 . The light detecting device of claim 17 , further comprising:
a second trench is disposed between the first pixel-separation trench and the second pixel-separation trench in the cross-sectional view, wherein a depth of the second trench is shallower than the depth of the first pixel-separation trench and the depth of the second pixel-separation trench in the cross-sectional view.

20 . The light detecting device of claim 19 , wherein a second concave portion of the first film is disposed above the second trench in the cross-sectional view.

21 . The light detecting device of claim 20 , wherein the first concave portion of the first film and the second concave portion of the first film correspond to the first trench and the second trench in the cross-sectional view.

22 . The light detecting device of claim 17 , wherein the first film includes one of hafnium oxide, aluminum oxide, tantalum oxide, or zirconium oxide.

23 . The light detecting device of claim 17 , wherein the first film is disposed in the first pixel-separation trench and the second pixel-separation trench.

24 . The light detecting device of claim 17 , further comprising:
a first flat portion of a light-receiving surface of the semiconductor substrate disposed between the first pixel-separation trench and the first trench in the cross-sectional view; and a second flat portion of the light-receiving surface disposed between the second pixel-separation trench and the first trench in the cross-sectional view.

25 . The light detecting device of claim 24 , wherein the first film is disposed above the first flat portion and the second flat portion in the cross-sectional view.

26 . The light detecting device of claim 17 , wherein at least a part of the first film is fully embedded in the first trench in the cross-sectional view.

27 . The light detecting device of claim 17 , wherein the first trench is a spindle-shape in the cross-sectional view.

28 . The light detecting device of claim 17 , wherein widths of the first pixel-separation trench and the second pixel-separation trench are smaller than the depths of the first pixel-separation trench and the second pixel-separation trench in the cross-sectional view.

29 . The light detecting device of claim 17 , wherein a refractive index of a material of the first film is smaller than a refractive index of a material of the semiconductor substrate.

30 . The light detecting device of claim 17 , further comprising:
a second film disposed on the first film, wherein the second film includes silicon oxide.

31 . The light detecting device of claim 30 , wherein the second film is disposed in the first concave portion in the cross-sectional view.

32 . The light detecting device of claim 17 , further comprising:
a multi-layer wiring layer disposed on the second plane of the semiconductor substrate.

Assignees

• Sony Group Corp

Inventors

• Masuda Yoshiaki
• Miyanami Yuki
• Abe Hideshi
• Hirano Tomoyuki
• Yamaguchi Masanari
• Ebiko Yoshiki
• Watanabe Kazufumi
• Ogita Tomoharu

Classifications

• H04N23/55

  Optical parts specially adapted for electronic image sensors; Mounting thereof · CPC title

• H04N25/633 Primary

  by using optical black pixels · CPC title

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/62

  Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels · CPC title