Microheater, gas sensor, and method for manufacturing microheater

US2022117044A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022117044-A1
Application numberUS-202117561912-A
CountryUS
Kind codeA1
Filing dateDec 24, 2021
Priority dateJun 27, 2019
Publication dateApr 14, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A microheater includes a first insulating layer, a first adhesion layer on the first insulating layer, a wiring layer on the first adhesion layer, a second adhesion layer that covers the wiring layer, and a second insulating layer above the first insulating layer and on the second adhesion layer. In the microheater, the wiring layer contains platinum, the first adhesion layer and the second adhesion layer each contain a metal oxide, and the metal oxide has an oxygen-deficient region in which the oxygen is deficient in the stoichiometric ratio of metal to oxygen.

First claim

Opening claim text (preview).

What is claimed is: 1 . A microheater comprising: a first insulating layer; a first adhesion layer on the first insulating layer; a wiring layer on the first adhesion layer; a second adhesion layer that covers the wiring layer; and a second insulating layer above the first insulating layer and on the second adhesion layer, wherein the wiring layer includes platinum, the first adhesion layer and the second adhesion layer each include a metal oxide, and the metal oxide includes an oxygen-deficient region in which oxygen is deficient in a stoichiometric ratio of metal to oxygen. 2 . The microheater according to claim 1 , wherein the oxygen in the oxygen-deficient region is 30 to 80% of oxygen of a stoichiometric composition of the metal oxide, and the metal includes one selected from the group consisting of titanium, chromium, tungsten, molybdenum, and tantalum. 3 . The microheater according to claim 1 , wherein the metal is titanium, and a stoichiometric ratio of metal to oxygen of the metal oxide is more than 1:0.5 and 1:1.5 or less. 4 . The microheater according to claim 1 , wherein the oxygen-deficient region includes a region in which the amount of oxygen gradually increases from an interface between the wiring layer and the first adhesion layer toward the first insulating layer, and a region in which the amount of oxygen gradually increases from an interface between the wiring layer and the second adhesion layer toward the second insulating layer. 5 . The microheater according to claim 1 , further comprising: a temperature sensor on the second insulating layer, wherein the wiring layer includes platinum, the second insulating layer includes an oxide insulating layer and a nitride layer on the oxide insulating layer, the wiring layer is connected to each of a pair of electrodes and includes a first bellows structure, the temperature sensor includes a second bellows structure, an angle formed between a straight line portion of the first bellows structure and a straight line portion of the second bellows structure is in a range from 45 degrees to 135 degrees, and the temperature sensor includes a metal oxide layer and a metal layer on the metal oxide layer. 6 . A gas sensor that includes the microheater according to claim 5 , wherein a metal oxide in the metal oxide layer includes the oxygen-deficient region in which the oxygen is deficient in a stoichiometric ratio of metal to oxygen, and the metal oxide in the metal oxide layer includes a material which is the same as that of the metal oxide in the first adhesion layer and the second adhesion layer. 7 . A method for manufacturing a microheater comprising: forming a first insulating layer; forming a first adhesion layer on the first insulating layer; forming a wiring layer on the first adhesion layer; forming a second adhesion layer that covers a side surface of the wiring layer on the wiring layer; and forming a second insulating layer above the first insulating layer and on the second adhesion layer, wherein the first adhesion layer and the second adhesion layer each include a metal oxide, and the metal oxide includes an oxygen-deficient region in which oxygen is deficient in a stoichiometric ratio of metal to oxygen. 8 . The method for manufacturing the microheater according to claim 7 , wherein the oxygen in the oxygen-deficient region is 30 to 80% of oxygen of a stoichiometric composition of the metal oxide, and the metal includes one selected from the group consisting of titanium, chromium, tungsten, molybdenum, and tantalum. 9 . The method for manufacturing the microheater according to claim 7 , wherein the metal is titanium, and a stoichiometric ratio of metal to oxygen of the metal oxide is more than 1:0.5 and 1:1.5 or less. 10 . The method for manufacturing the microheater according to claim 7 , wherein the oxygen-deficient region includes a region in which the amount of oxygen gradually increases from an interface between the wiring layer and the first adhesion layer toward the first insulating layer, and a region in which the amount of oxygen gradually increases from an interface between the wiring layer and the second adhesion layer toward the second insulating layer. 11 . The method for manufacturing the microheater according to claim 7 , further comprising: forming a temperature sensor on the second insulating layer, wherein the temperature sensor comprises: a process of forming a metal oxide layer on the second insulating layer; and a process of forming a metal layer on the metal oxide layer, the second insulating layer comprises: a process of forming an oxide insulating layer on the first insulating layer and the second adhesion layer; and a process of forming a nitride layer on the oxide insulating layer, the wiring layer includes platinum, the wiring layer is formed to include a first bellows structure, the temperature sensor is formed to include a second bellows structure, and an angle formed between a straight line portion of the first bellows structure and a straight line portion of the second bellows structure is in a range from 45 degrees to 135 degrees. 12 . The method for manufacturing the microheater according to claim 11 , wherein a metal oxide in the metal oxide layer includes the oxygen-deficient region in which the oxygen is deficient in a stoichiometric ratio of metal to oxygen. 13 . The method for manufacturing the microheater according to claim 11 , wherein a metal oxide in the metal oxide layer includes a material which is the same as that of the metal oxide in the first adhesion layer and the second adhesion layer.

Assignees

Inventors

Classifications

  • Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater (H05B3/62, H05B3/68, H05B3/78, H05B3/84 take precedence) · CPC title

  • characterised by the composition or nature of the conductive material · CPC title

  • including layers graded in composition or physical properties · CPC title

  • with at least one oxide layer · CPC title

  • including at least one pure metallic layer · CPC title

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What does patent US2022117044A1 cover?
A microheater includes a first insulating layer, a first adhesion layer on the first insulating layer, a wiring layer on the first adhesion layer, a second adhesion layer that covers the wiring layer, and a second insulating layer above the first insulating layer and on the second adhesion layer. In the microheater, the wiring layer contains platinum, the first adhesion layer and the second adh…
Who is the assignee on this patent?
Rohm Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01N33/0027. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Apr 14 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).