Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film

Patent metadata

Field	Value
Publication number	US-2022115611-A1
Application number	US-202117555528-A
Country	US
Kind code	A1
Filing date	Dec 20, 2021
Priority date	Jul 1, 2019
Publication date	Apr 14, 2022
Grant date	—

Abstract

A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.

First claim

What is claimed is:

1 . A photodetector element comprising:
a photoelectric conversion layer that contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, wherein the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.

2 . The photodetector element according to claim 1 ,
wherein the PbS quantum dot contains 1.75 mol or more and 1.90 mol or less of the Pb atom with respect to 1 mol of the S atom.

3 . The photodetector element according to claim 1 ,
wherein the ligand contains at least one selected from a ligand containing a halogen atom or a polydentate ligand containing two or more coordination moieties.

4 . The photodetector element according to claim 3 ,
wherein the ligand containing a halogen atom is an inorganic halide.

5 . The photodetector element according to claim 4 ,
wherein the inorganic halide contains a Zn atom.

6 . The photodetector element according to claim 3 ,
wherein the ligand containing a halogen atom contains an iodine atom.

7 . The photodetector element according to claim 1 ,
wherein the ligand contains at least one selected from 3-mercaptopropionic acid, zinc iodide, zinc bromide, or indium iodide.

8 . The photodetector element according to claim 1 ,
wherein the ligand contains two or more kinds of ligands.

9 . The photodetector element according to claim 1 ,
wherein the ligand contains a ligand containing a halogen atom and a polydentate ligand containing two or more coordination moieties.

10 . The photodetector element according to claim 1 ,
wherein the photodetector element is a photodiode-type photodetector element.

11 . A manufacturing method for the photodetector element according to claim 1 , the manufacturing method comprising:
using a dispersion liquid that contains PbS quantum dots that contain 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom, a ligand that is coordinated to the PbS quantum dot, and a solvent, to form a film of aggregates of the PbS quantum dots.

12 . An image sensor comprising the photodetector element according to claim 1 .

13 . The image sensor according to claim 12 ,
wherein the image sensor senses light having a wavelength of 900 to 1,600 nm.

14 . The image sensor according to claim 12 ,
wherein the image sensor is an infrared image sensor.

15 . A dispersion liquid comprising:
PbS quantum dots that contain 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom; a ligand that is coordinated to the PbS quantum dot; and a solvent.

16 . A semiconductor film comprising:
aggregates of PbS quantum dots; and a ligand that is coordinated to the PbS quantum dot, wherein the PbS quantum dot contains 1.75 mol or more and 1.95 mol or less of a Pb atom with respect to 1 mol of a S atom.

Assignees

• Fujifilm Corp

Inventors

• Takata Masahiro
• Ono Masashi
• Kitajima Shunsuke

Classifications

• H10K30/352

  the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer · CPC title

• H10K30/87

  Light-trapping means · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title

• H10F30/20

  the devices having potential barriers, e.g. phototransistors · CPC title

• H10F77/12

  Active materials · CPC title