Electrically conductive thin films
US-2015380122-A1 · Dec 31, 2015 · US
Preparation of metal chalcogenides
US2022106197A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022106197-A1 |
| Application number | US-202117300772-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 1, 2021 |
| Priority date | Aug 1, 2017 |
| Publication date | Apr 7, 2022 |
| Grant date | — |
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Abstract
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A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.
First claim
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1 .- 24 . (canceled) 25 . A transition metal chalcogenide material having a hetero-layered structure having layers of different composition derived from different transition metal chalcogenides. 26 . The material of claim 25 that has been converted to comprise a substantially homogeneous solid solution of two or more different transition metal chalcogenides. 27 .- 46 . (canceled) 47 . The material of claim 25 wherein respective layers have at least one of a different transition metal constituent and a chalcogen constituent from the next adjacent layer. 48 . The material of claim 25 where the hetero-layered structure comprises a mixed transition metal dichalcogenide material. 49 . The material of claim 25 wherein the hetero-layered structure comprises a mixed transition metal trichalcogenide material. 50 . The material of claim 25 wherein the hetero-layered structure comprise a same transition metal dichalcogenide material. 51 . The material of claim 25 wherein the hetero-layered structure comprises a same transition metal trichalcogenide material. 52 . The material of claim 25 wherein the transition metal is selected from the group consisting of Ti, Zr, Hf, Nb, Ta, Mo, W, Re, Pd, Pt, In, Ga and Sn. 53 . The material of claim 25 which includes at least one of graphite, black phosphorus, and boron nitride. 54 . The material of claim 26 which has been heated to convert the structure to a single-phase structure. 55 . The material of claim 25 wherein the layers are self-combined, exfoliated layers. 56 . The material of claim 52 having a chemical composition represented by (M a M 2 b M 3 c . . . n )(X d X 2 e X 3 f ), where the formula unit includes two or more different transition metals (M), and X, X 2 and X 3 represent S, Se, or Te, whereby the sum of a+b+c+ . . . n is between 1 and 3 and the sum of d+e+f is between 1 and 6.
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by IR- or Raman-data · CPC title
by unit-cell parameters, atom positions or structure diagrams · CPC title
extending in three dimensions · CPC title
obtained by TEM, STEM, STM or AFM · CPC title
Compounds of tungsten · CPC title
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- What does patent US2022106197A1 cover?
- A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.
- Who is the assignee on this patent?
- Univ Iowa State Res Found Inc
- What technology area does this patent fall under?
- Primary CPC classification C01B19/002. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 07 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).