Solar cell and method for manufacturing the same

US2022093809A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022093809-A1
Application numberUS-202117540983-A
CountryUS
Kind codeA1
Filing dateDec 2, 2021
Priority dateSep 19, 2012
Publication dateMar 24, 2022
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Discussed is a method for manufacturing a solar cell including forming a lightly doped emitter region having a first sheet resistance at a first surface of a substrate, forming a dopant layer on the lightly doped emitter region, irradiating a laser beam onto the dopant layer to form a heavily doped emitter region having a second sheet resistance less than the first sheet resistance; forming a first finger electrode on the heavily doped emitter region in a first direction and forming a first bus bar electrode in a second direction to form a first electrode, and forming a second electrode on a second surface of the substrate, wherein the forming of the first bus bar electrode of the first electrode includes coating a bus bar paste including electrically conductive metal particles and a thermosetting resin and performing a predetermined temperature process on the bus bar paste.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method for manufacturing a solar cell comprising: forming a lightly doped emitter region having a first sheet resistance at a first surface of a substrate; forming a dopant layer on the lightly doped emitter region; irradiating a laser beam onto the dopant layer to form a heavily doped emitter region having a second sheet resistance less than the first sheet resistance; forming a first finger electrode on the heavily doped emitter region in a first direction and forming a first bus bar electrode in a second direction to form a first electrode; and forming a second electrode on a second surface of the substrate, wherein the forming of the first bus bar electrode of the first electrode includes coating a bus bar paste including electrically conductive metal particles and a thermosetting resin and performing a predetermined temperature process on the bus bar paste. 2 . The method of claim 1 , wherein the predetermined temperature process of the bus bar paste is performed at about 300° C. to 350° C. 3 . The method of claim 1 , wherein when the predetermined temperature process is performed on the bus bar paste, the bus bar paste does not pass through the dopant layer. 3 . The method of claim 1 , wherein when the predetermined temperature process is performed on the bus bar paste, a recrystallized metal layer is not formed at an interface between the bus bar paste and the emitter region. 4 . The method of claim 1 , wherein a shape of the electrically conductive metal particles after performing the predetermined temperature process is the same as a shape of the electrically conductive metal particles before performing predetermined low temperature process. 5 . The method of claim 1 , wherein the bus bar paste lacks a glass frit or includes a glass frit equal to or less than about 10% per unit volume of the bus bar paste. 6 . The method of claim 1 , wherein the thermosetting resin includes a monomer-based epoxy resin or an acrylic resin. 7 . The method of claim 1 , wherein the first finger electrode includes a seed layer containing nickel (Ni) formed on the heavily doped emitter region and a conductive metal layer formed on the seed layer, wherein when the predetermined temperature process is performed on the bus bar paste, a nickel-silicide layer generated by chemical bonding between nickel (Ni) and silicon (Si) of the heavily doped emitter region is formed on the seed layer of the first finger electrode.

Assignees

Inventors

Classifications

  • Photovoltaic cells having only PN homojunction potential barriers · CPC title

  • Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

  • Electrodes · CPC title

  • H10F77/211Primary

    for photovoltaic cells · CPC title

  • H10F19/00Primary

    Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules · CPC title

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What does patent US2022093809A1 cover?
Discussed is a method for manufacturing a solar cell including forming a lightly doped emitter region having a first sheet resistance at a first surface of a substrate, forming a dopant layer on the lightly doped emitter region, irradiating a laser beam onto the dopant layer to form a heavily doped emitter region having a second sheet resistance less than the first sheet resistance; forming a f…
Who is the assignee on this patent?
Lg Electronics Inc
What technology area does this patent fall under?
Primary CPC classification H10F77/211. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Mar 24 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).