Power leadframe package with lead sidewall surface that is fully solder wettable
US-2024274572-A1 · Aug 15, 2024 · US
US2022093416A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022093416-A1 |
| Application number | US-202117457726-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 6, 2021 |
| Priority date | Dec 26, 2019 |
| Publication date | Mar 24, 2022 |
| Grant date | — |
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A method of tie bar removal is provided. The method includes forming a leadframe including a tie bar and a flag. The tie bar extends from a side rail of the leadframe and has a distal portion at an angle different from a plane of the flag. A semiconductor die is attached to the flag of the leadframe. A molding compound encapsulates the semiconductor die, a portion of the leadframe, and the distal portion of the tie bar. The tie bar is separated from the molding compound with an angled cavity remaining in the molding compound.
Opening claim text (preview).
What is claimed is: 1 - 16 . (canceled) 17 . A semiconductor device comprising: a leadframe having a plurality of conductive leads and a flag; a semiconductor die attached to the flag of the leadframe; and a molding compound encapsulating the semiconductor die and a portion of the leadframe, an angled cavity formed in the molding compound at an end of the semiconductor device, the angled cavity formed at an angle different from a plane of the flag. 18 . The semiconductor device of claim 17 , wherein the angle of the angled cavity is in a range of 15 to 75 degrees relative to the plane of the flag. 19 . The semiconductor device of claim 17 , wherein an innermost end of the angled cavity comprises a tetrahedron or pyramid shape. 20 . The semiconductor device of claim 17 , wherein an innermost end of the angled cavity comprises a semi-spherical or semi-cylindrical shape. 21 . The semiconductor device of claim 17 , wherein the angled cavity is formed by way of removing a tie bar. 22 . The semiconductor device of claim 17 , wherein an outermost end of the angled cavity is approximately coplanar with the flag of the leadframe. 23 . The semiconductor device of claim 17 , wherein an innermost end of the angled cavity is offset from a plane of the flag of the leadframe. 24 . A semiconductor device comprising: a leadframe having a plurality of conductive leads and a flag; a semiconductor die attached to the flag of the leadframe; and a molding compound encapsulating the semiconductor die and a portion of the leadframe, an angled cavity formed in the molding compound at an end of the semiconductor device. 25 . The semiconductor device of claim 24 , wherein the angled cavity is formed having an angle different from a plane of the flag, the angle of the angled cavity having a range of 15 to 75 degrees relative to the plane of the flag 26 . The semiconductor device of claim 25 , wherein an outermost end of the angled cavity is approximately coplanar with the plane of the flag of the leadframe. 27 . The semiconductor device of claim 25 , wherein an innermost end of the angled cavity is offset from the plane of the flag of the leadframe. 28 . The semiconductor device of claim 24 , wherein an innermost end of the angled cavity comprises a tetrahedron or pyramid shape. 29 . The semiconductor device of claim 24 , wherein an innermost end of the angled cavity comprises a semi-spherical or semi-cylindrical shape. 30 . The semiconductor device of claim 24 , wherein the angled cavity is formed by way of removing a tie bar. 31 . A semiconductor device comprising: a leadframe having a plurality of conductive leads and a flag; a semiconductor die attached to the flag of the leadframe; and a molding compound encapsulating the semiconductor die and a portion of the leadframe, an angled cavity formed in the molding compound at an end of the semiconductor device, an outermost end of the angled cavity approximately coplanar with a plane of the flag. 32 . The semiconductor device of claim 31 , wherein the angled cavity is formed having an angle different from the plane of the flag. 33 . The semiconductor device of claim 32 , wherein the angle of the angled cavity is in a range of 15 to 75 degrees relative to the plane of the flag. 34 . The semiconductor device of claim 31 , wherein an innermost end of the angled cavity is offset from the plane of the flag of the leadframe. 35 . The semiconductor device of claim 31 , wherein an innermost end of the angled cavity comprises a tetrahedron or pyramid shape. 36 . The semiconductor device of claim 31 , wherein an innermost end of the angled cavity comprises a semi-spherical or semi-cylindrical shape.
forming a chip-scale package [CSP] · CPC title
using moulds · CPC title
Cross-sectional shapes (H10W70/481 takes precedence) · CPC title
Chip-supporting parts, e.g. die pads · CPC title
Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps · CPC title
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