Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible

Patent metadata

Field	Value
Publication number	US-2022090291-A1
Application number	US-201917413929-A
Country	US
Kind code	A1
Filing date	Dec 16, 2019
Priority date	Dec 27, 2018
Publication date	Mar 24, 2022
Grant date	—

Abstract

A quartz glass crucible 1 having a cylindrical side wall portion 10 a , a bottom portion 10 b , and a corner portion 10 c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10 c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10 c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10 a , and the infrared transmissivity of the side wall portion 10 a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10 b.

First claim

1 . A quartz glass crucible comprising:
a cylindrical side wall portion; a bottom portion; a corner portion connecting the side wall portion and the bottom portion to each other; a transparent layer made of quartz glass that does not contain bubbles; a bubble layer formed outside the transparent layer and made of quartz glass containing a large number of bubbles; and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state, wherein an infrared transmissivity of the corner portion in a state where the semi-molten layer is removed is 25 to 51%, the infrared transmissivity of the corner portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the side wall portion in a state where the semi-molten layer is removed, and the infrared transmissivity of the corner portion in the state where the semi-molten layer is removed is lower than an infrared transmissivity of the bottom portion in a state where the semi-molten layer is removed.

2 . The quartz glass crucible according to claim 1 ,
wherein the infrared transmissivity of the side wall portion in the state where the semi-molten layer is removed is higher than the infrared transmissivity of the bottom portion in the state where the semi-molten layer is removed.

3 . The quartz glass crucible according to claim 1 ,
wherein the infrared transmissivity of the side wall portion in the state where the semi-molten layer is removed is 46 to 84%, and the infrared transmissivity of the bottom portion in the state where the semi-molten layer is removed is 36 to 70%.

4 . The quartz glass crucible according to claim 1 ,
wherein a thermal conductivity of the corner portion in the state where the semi-molten layer is removed is 1.5×10 −3 to 5.8×10 −3 cal/cm·s·° C., the thermal conductivity of the corner portion in the state where the semi-molten layer is removed is lower than a thermal conductivity of the side wall portion in the state where the semi-molten layer is removed, and the thermal conductivity of the corner portion in the state where the semi-molten layer is removed is lower than a thermal conductivity of the bottom portion in the state where the semi-molten layer is removed.

5 . The quartz glass crucible according to claim 4 ,
wherein the thermal conductivity of the side wall portion in the state where the semi-molten layer is removed is 3.5×10 −3 to 15.0×10 −3 cal/cm·s·° C., and the thermal conductivity of the bottom portion in the state where the semi-molten layer is removed is 2.7×10 −3 to 13.2×10 −3 cal/cm·s·° C.

6 . The quartz glass crucible according to claim 1 ,
wherein a thickness of the bubble layer of the corner portion is 10 to 35 mm, a thickness of the bubble layer of the side wall portion is 1 to 21 mm, and a thickness of the bubble layer of the bottom portion is 4 to 21 mm.

7 . A manufacturing method of a silicon single crystal by a Czochralski method, comprising:
pulling up a silicon single crystal having an oxygen concentration of 12×10 17 atoms/cm 3 or less using the quartz glass crucible according to claim 1 .

8 . A quartz glass crucible comprising:
a cylindrical side wall portion; a bottom portion; a corner portion connecting the side wall portion and the bottom portion to each other; a transparent layer made of quartz glass that does not contain bubbles; a bubble layer formed outside the transparent layer and made of quartz glass containing a large number of bubbles; a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state; and at least one semi-molten layer-removed portion formed of a region from which a portion of the semi-molten layer has been removed.

9 . The quartz glass crucible according to claim 8 ,
wherein the semi-molten layer-removed portion includes a first semi-molten layer-removed portion provided in the side wall portion, a second semi-molten layer-removed portion provided in the corner portion, and a third semi-molten layer-removed portion provided in the bottom portion.

10 . An infrared transmissivity measurement method of a quartz glass crucible,
in which the quartz glass crucible includes a transparent layer made of quartz glass that does not contain bubbles, a bubble layer formed outside the transparent layer and made of quartz glass containing a large number of bubbles, and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state, the infrared transmissivity measurement method comprising: a step of processing an outer surface of the quartz glass crucible formed by the semi-molten layer so that a surface roughness of the outer surface becomes low; and a step of measuring an infrared transmissivity of the quartz glass crucible based on infrared light passing through the outer surface after processing the outer surface.

11 . The infrared transmissivity measurement method of a quartz glass crucible according to claim 10 ,
wherein, in the step of processing the outer surface, the outer surface is processed so that an arithmetic average roughness Ra of the outer surface becomes 15 μm or less.

12 . The infrared transmissivity measurement method of a quartz glass crucible according to claim 10 ,
wherein the outer surface is processed until the semi-molten layer is removed.

13 . The infrared transmissivity measurement method of a quartz glass crucible according to claim 10 ,
wherein the infrared transmissivity is measured using a crucible piece cut out from the quartz glass crucible.

14 . The infrared transmissivity measurement method of a quartz glass crucible according to claim 10 ,
wherein the step of processing the outer surface is a polishing treatment or a blasting treatment.

15 . A manufacturing method of a quartz glass crucible,
in which the quartz glass crucible includes a transparent layer made of quartz glass that does not contain bubbles, a bubble layer formed outside the transparent layer and made of quartz glass containing a large number of bubbles, and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state, the manufacturing method comprising: a step of manufacturing a first quartz glass crucible based on first manufacturing conditions; a step of processing an outer surface of the first quartz glass crucible formed by the semi-molten layer so that a surface roughness of the outer surface becomes low; a step of measuring an infrared transmissivity of the first quartz glass crucible based on infrared light passing through the outer surface after processing the outer surface; and a step of manufacturing a second quartz glass crucible based on second manufacturing conditions modified based on a measurement result of the infrared transmissivity of the first quartz glass crucible so that a measured value of the infrared transmissivity becomes a target value.

16 . The quartz glass crucible according to claim 2 ,
wherein the infrared transmissivity of the side wall portion in the state where the semi-molten layer is removed is 46 to 84%, and the infrared transmissivity of the bottom portion in the state where the semi-molten layer is removed is 36 to 70%.

17 . The quartz glass crucible according to claim 2 ,
wherein a thermal conductivity of the corner portion in the state where the semi-molten layer is removed is 1.5×10 −3 to 5.8×10 −3 cal/cm·s·° C., the thermal condu

Assignees

• Sumco Corp

Inventors

• Kitahara Ken
• Fukui Masanori
• Kishi Hiroshi
• Katano Tomokazu
• Kitahara Eriko

Classifications

• G01N21/3563

  for analysing solids; Preparation of samples therefor · CPC title

• G01N21/59

  Transmissivity (G01N21/25 takes precedence) · CPC title

• C03B20/00

  Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title

• C30B15/10 Primary

  Crucibles or containers for supporting the melt · CPC title

• C03C2218/113

  by sol-gel processes · CPC title