Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same

US2022090278A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2022090278-A1
Application numberUS-202117544166-A
CountryUS
Kind codeA1
Filing dateDec 7, 2021
Priority dateAug 9, 2017
Publication dateMar 24, 2022
Grant date

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  1. Title

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  5. First independent claim

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Abstract

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A method foe producing a transparent electrode for oxygen production having a Ta nitride layer on a transparent substrate, including: a step of forming a Ta nitride precursor layer on the transparent substrate; and a step of nitriding the Ta nitride precursor layer with a mixed gas containing ammonia and a carrier gas.

First claim

Opening claim text (preview).

1 . A transparent electrode for oxygen production in which a nitride semiconductor layer and a Ta nitride layer are stacked in this order on a transparent substrate. 2 . The transparent, electrode for oxygen production according to claim 1 , wherein the Ta nitride layer is a Ta 3 N 5 layer. 3 . The transparent electrode for oxygen production according to claim 1 , wherein the nitride semiconductor layer is a GaN layer. 4 . The transparent electrode for oxygen production according to claim 1 , wherein the transparent substrate is a sapphire substrate or a SiO 2 substrate. 5 . The transparent electrode for oxygen production according to claim 1 , wherein light transmittance at wavelength of 600 nm to 900 nm is 80% or more. 6 . A tandem water splitting reaction electrode in which the transparent electrode for oxygen production according to claim 1 and an electrode for hydrogen production are stacked. 7 . An oxygen production device comprising the transparent electrode for oxygen production according to claim 1 . 8 . A water splitting device comprising the transparent electrode for oxygen production according to claim 1 . 9 . A water splitting device comprising the tandem water splitting reaction electrode according to claim 6 . 10 . A water splitting device comprising: the transparent electrode for oxygen production according claim 1 ; and a tandem water splitting reaction electrode in which another transparent electrode for oxygen production and an electrode for hydrogen production having an absorption peak at a wavelength longer than 300 nm are combined, wherein the another transparent electrode for oxygen production comprises Ta 3 N 5 to be used as an oxygen production-side electrode in a water splitting reaction, wherein light transmittance at 600 nm to 900 nm is 80% or more, and photocurrent density at 1.23 V RHE is 3 mA/cm or more under AM1.5G irradiation. 11 . A synthesis device comprising the water splitting device according to claim 3 and a reactor in which a catalyst is arranged, wherein hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor. 12 . A synthesis device comprising the water splitting device according to claim 9 and a reactor in which a catalyst is arranged, wherein hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor. 13 . A synthesis device comprising the water splitting device according to claim 10 and a reactor in which a catalyst is arranged, wherein hydrogen obtained from the water splitting device and another raw material are introduced into the reactor and reacted in the reactor.

Assignees

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Classifications

  • Thickness of the active catalytic layer · CPC title

  • X-ray diffraction · CPC title

  • Indexing scheme associated with group B01J35/00, related to the analysis techniques used to determine the catalysts form or properties · CPC title

  • Water · CPC title

  • Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof · CPC title

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What does patent US2022090278A1 cover?
A method foe producing a transparent electrode for oxygen production having a Ta nitride layer on a transparent substrate, including: a step of forming a Ta nitride precursor layer on the transparent substrate; and a step of nitriding the Ta nitride precursor layer with a mixed gas containing ammonia and a carrier gas.
Who is the assignee on this patent?
Mitsubishi Chem Corp, Univ Tokyo, Japan Tech Research Association Of Artificial Photosynthetic Chemical Process, and 1 more
What technology area does this patent fall under?
Primary CPC classification C25B1/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Mar 24 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).