Lift-off apparatus for manufacturing flexible light emitting device

Patent metadata

Field	Value
Publication number	US-2022069265-A1
Application number	US-202117522861-A
Country	US
Kind code	A1
Filing date	Nov 9, 2021
Priority date	May 9, 2018
Publication date	Mar 3, 2022
Grant date	—

Abstract

According to a flexible light-emitting device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a multilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with lift-off light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of light-emitting devices (1000) which are in contact with the stage (210). The light-emitting devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the lift-off light includes forming the lift-off light from a plurality of arrayed light sources such that the irradiation intensity of the lift-off light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the lift-off light for the interface between the flexible substrate region (30d) and the glass base (10).

First claim

1 . An apparatus for producing a flexible light-emitting device, comprising:
a stage for supporting a multilayer stack which has a first surface and a second surface, the multilayer stack including
a glass base which defines the first surface,
a functional layer region including a Thin Film Transistor (TFT) layer and a light-emitting device layer,
a synthetic resin film provided between the glass base and the functional layer region and bound to the glass base, the synthetic resin film including a flexible substrate region supporting the functional layer region and an intermediate region surrounding the flexible substrate region, and
a protection sheet which covers the functional layer region and which defines the second surface,
the intermediate region and the flexible substrate region of the synthetic resin film being divided from each other; and
a lift-off light irradiation unit for irradiating with lift-off light an interface between the synthetic resin film and the glass base in the multilayer stack supported by the stage, wherein the lift-off light irradiation unit includes a plurality of arrayed light sources for forming the lift-off light, and the lift-off light irradiation unit configured to: reduce an irradiation intensity of the lift-off light for at least part of an interface between the intermediate region of the synthetic resin film and the glass base below a threshold level Th of the irradiation intensity which is necessary for delamination; irradiate the at least part of the interface between the intermediate region of the synthetic resin film and the glass base with the lift-off light; and irradiate the interface between the flexible substrate region of the synthetic resin film and the glass base with the lift-off light whose irradiation intensity is higher than threshold level Th.

2 . The apparatus of claim 1 , wherein each of the plurality of light sources is an incoherent light source.

3 . The apparatus of claim 1 , wherein
the light-emitting device layer includes a plurality of arrayed micro Light-Emitting Diodes (LEDs), and each of the plurality of light sources is a semiconductor laser device.

4 . The apparatus of claim 1 , wherein
the plurality of light sources are a plurality of light-emitting diode devices, and the lift-off light irradiation unit includes a driving circuit for modulating a driving current flowing through each of the plurality of light-emitting diode devices, thereby temporally and/or spatially modulating the irradiation intensity of the lift-off light.

5 . The apparatus of claim 4 , wherein
the plurality of light-emitting diode devices are arranged in a single row or a plurality of rows, and the irradiation intensity of the lift-off light has four or more peaks at the interface between the intermediate region of the synthetic resin film and the glass base.

6 . The apparatus of claim 5 , wherein an array pitch of the plurality of light-emitting diode devices is in the range of not less than 3 mm and not more than 10 mm.

7 . The apparatus of claim 1 , further comprising an actuator for increasing a distance from the stage to the glass base while the stage is kept in contact with the second surface of the multilayer stack, thereby separating the multilayer stack into a first portion and a second portion,
wherein the first portion of the multilayer stack includes a light-emitting device which is in contact with the stage, the light-emitting device including the functional layer region and the flexible substrate region of the synthetic resin film, and the second portion of the multilayer stack includes the glass base and the intermediate region of the synthetic resin film.

Assignees

• Sakai Display Products Corp

Inventors

• Kishimoto Katsuhiko
• Tanaka Kohichi

Classifications

• H10W90/00

  Package configurations · CPC title

• H10K71/421

  using coherent electromagnetic radiation, e.g. laser annealing · CPC title

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K59/8731

  multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title