Tris(trichlorosilyl)dichlorogallylgermane, process for the preparation thereof and use thereof

Patent metadata

Field	Value
Publication number	US-2022017380-A1
Application number	US-201917309253-A
Country	US
Kind code	A1
Filing date	Nov 7, 2019
Priority date	Nov 14, 2018
Publication date	Jan 20, 2022
Grant date	—

Abstract

A process can be used for the preparation of tris(trichlorosilyl)dichlorogallylgermane, which is a chlorinated, uncharged substance.

First claim

1 : Tris(trichlorosilyl)dichlorogallylgermane of the formula (I):

2 : A process for preparing the tris(trichlorosilyl)dichlorogallylgermane according to claim 1 , the process comprising:
(a) mixing at least one tris(trichlorosilyl)germanide salt of an [X][Ge(SiCl 3 ) 3 ] type, wherein X=ammonium (R 4 N) and/or phosphonium (R 4 P), and R=n alkylic or aromatic radical, with GaCl 3 , to obtain a mixture, and (b) reacting the mixture in an environment consisting of at least one chlorinated hydrocarbon at a temperature of 5 to 40° C., to obtain a crude product comprising salts [R 4 N][GaCl 4 ] and/or [R 4 P][GaCl 4 ] and tris(trichlorosilyl)dichlorogallylgermane, and subsequently (c) introducing said crude product into at least one nonpolar solvent and separating off insoluble residue, and subsequently (d) removing the at least one nonpolar solvent, to obtain tris(trichlorosilyl)dichlorogallylgermane.

3 : The process according to claim 2 , wherein in (b), the reaction is conducted at room temperature, and/or
wherein in (d), the at least one nonpolar solvent is removed at room temperature.

4 : The process according to claim 2 , wherein in (b), the at least one chlorinated hydrocarbon is dichloromethane CH 2 Cl 2 .

5 : The process according to claim 2 , wherein in (b), R=Et.

6 : The process according to claim 2 , wherein in (c), the at least one nonpolar solvent is selected from the group consisting of hexane, n-hexane, pentane, and benzene.

7 : The process according to claim 2 , wherein
in (a), [X][Ge(SiCl 3 ) 3 ] and GaCl 3 are mixed by stirring, in (b), the mixture obtained in (a) is completely dissolved in the at least one chlorinated hydrocarbon, and after a time of 0.1 to 24 hours, the at least one chlorinated hydrocarbon is removed.

8 : The process according to claim 2 , wherein
in (c), after the introduction of the crude product, the temperature of the at least one nonpolar solvent is brought for from 1 to 5 times, from room temperature to an elevated temperature and is subsequently allowed to cool.

9 : A method of deposition of gallium-doped Si—Ge layers, the method comprising:
using the tris(trichlorosilyl)dichlorogallylgermane according to claim 1 as a precursor for the deposition of gallium-doped Si—Ge layers.

10 : The process according to claim 6 , wherein the at least one nonpolar solvent is n-hexane.

11 : The process according to claim 7 , wherein [X][Ge(SiCl 3 ) 3 ] and GaCl 3 are in a solid state.

12 : The process according to claim 7 , wherein the mixing in (a) is performed in an oxygen-free environment.

13 : The process according to claim 7 , wherein the mixing in (a) is performed under protective gas, nitrogen, or argon.

14 : The process according to claim 7 , wherein in (b), the at least one chlorinated hydrocarbon is removed after 1 to 5 hours.

15 : The process according to claim 7 , wherein in (b), the at least one chlorinated hydrocarbon is removed at room temperature.

16 : The process according to claim 7 , wherein in (b), the at least one chlorinated hydrocarbon is removed in an oxygen-free, dry environment.

17 : The process according to claim 7 , wherein in (b), the at least one chlorinated hydrocarbon is removed at a pressure in a range from 1 to 500 hPa.

18 : The process according to claim 8 , wherein the nonpolar solvent is brought for 3 times from room temperature to an elevated temperature.

19 : The process according to claim 8 , wherein the elevated temperature is a boiling point temperature of the at least one nonpolar solvent.

20 : The process according to claim 8 , wherein the cooling of the at least one nonpolar solvent is to room temperature.

Assignees

• Evonik Operations Gmbh

Inventors

• Wagner Matthias
• Teichmann Julian
• Lerner Hans-Wolfram

Classifications

• C23C16/24

  Deposition of silicon only · CPC title

• C01G17/006 Primary

  Compounds containing germanium, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

• C01B33/107 Primary

  Halogenated silanes · CPC title