Seminconductor laser and method for producing a semiconductor laser

Patent metadata

Field	Value
Publication number	US-2022013979-A1
Application number	US-201917295297-A
Country	US
Kind code	A1
Filing date	Nov 11, 2019
Priority date	Nov 21, 2018
Publication date	Jan 13, 2022
Grant date	—

Abstract

In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 μm.

First claim

1 . A semiconductor laser with a housing and with a plurality of laser diode chips encapsulated in the housing, wherein
the housing comprises a cover plate and/or a side wall which is transmissive for laser radiation generated during operation, the cover plate and/or the side wall comprises a light exit surface with adjacent exit regions each of the exit regions is assigned to exactly one of the laser diode chips, and a light exit plane is arranged downstream of the light exit surface in a beam path, and the cover plate and/or the side wall comprise different average thicknesses in the exit regions, so that an optical path length for the laser radiation of all laser diode chips up to the light exit plane is the same with a tolerance of at most 3 μm.

2 . The semiconductor laser according to claim 1 , in which the exit regions are each planar partial surfaces of the light exit surface and the exit regions are all located in the cover plate,
wherein the tolerance within which the optical path lengths are equal is at most 1.5 μm.

3 . The semiconductor laser according to claim 1 ,
wherein the laser diode chips are edge-emitting semiconductor laser chips, wherein, in operation, an emission of the laser diode chips is in a direction parallel to the light exit plane, and wherein at least one deflecting optic is arranged downstream of the laser diode chips in the housing, which optic is configured to deflect laser radiation generated during operation towards the cover plate.

4 . The semiconductor laser according to claim 1 ,
wherein the housing further comprises a base plate and a middle part, wherein the base plate, the middle part and the cover plate are attached to each other by means of anodic bonding and/or soldering such that the laser diode chips are hermetically encapsulated in the housing, and wherein the middle part and the cover plate are of the same material.

5 . The semiconductor laser according to claim 3 ,
wherein the middle part is mounted between the base plate and the cover plate, and wherein the middle part comprises the exact one deflecting optics as a planar oblique boundary surface of a recess, and the laser diode chips are arranged in the recess of the middle part.

6 . The semiconductor laser according to claim 1 ,
wherein a thickness of the cover plate outside the exit regions is between 0.2 mm and 2 mm inclusive, wherein a thickness reduction in at least one of the exit regions is at least 0.1 mm.

7 . The semiconductor laser according to claim 1 ,
wherein the cover plate and/or the side wall is made of a glass, wherein a refractive index of the cover plate and/or the side wall for the laser radiation generated in operation at a temperature of 300 K is between 1.4 and 1.6, inclusive.

8 . The semiconductor laser according to claim 1 ,
wherein the exit regions have different shapes in plan view of the light exit surface and/or in cross-section through the light exit surface.

9 . The semiconductor laser according to claim 1 ,
wherein at least one of the exit regions is oriented obliquely with respect to the light exit plane, wherein an angle between the light exit plane and the respective exit region is between 0.5° and 5°, inclusive.

10 . The semiconductor laser according to claim 1 ,
wherein a light entrance surface of the cover plate and/or the side wall is planar, wherein the light entrance surface faces the light exit surface, and a distance of the laser diode chips from the light entrance surface along a beam path is between 0.3 mm and 3 mm, inclusive.

11 . The semiconductor laser according to claim 1 ,
wherein one of the laser diode chips is configured to generate red light, one of the laser diode chips is configured to generate green light, and one of the laser diode chips is configured to generate blue light, and the laser diode chips are electrically controllable independently of each other, wherein the laser diode chips are jointly followed by a beam shaping optics and/or a movable deflection mirror.

12 . The semiconductor laser according to claim 1 ,
wherein the exit regions are directly provided with at least one anti-reflective coating, wherein the exit regions are arranged along a straight line as seen in plan view of the light exit plane, and wherein an average roughness of the exit regions is at most 0.2 μm in each case.

13 . The semiconductor laser according to claim 1 ,
wherein the exit regions are all located in the side wall.

14 . A method of manufacturing a semiconductor laser according to claim 1 comprising the steps:
A) providing the housing, preferably with the laser diode chips fully encapsulated therein,
B) operating the laser diode chips and measuring a radiation characteristic from each of the laser diode chips,
C) modifying the cover plate and/or the side wall in the exit regions so that positioning tolerances of the laser diode chips in the housing are compensated and the optical path length for the laser radiation of all laser diode chips up to the light exit plane is equal with a tolerance of at most 3 μm and/or is equal with a tolerance of at most 3 μm to a previously predetermined target value.

15 . The method of manufacturing according to claim 14 ,
wherein in step C) material is removed from the cover plate and/or from the side wall so that the cover plate and/or the side wall becomes thinner in at least one of the exit regions than adjacent to the exit regions.

16 . The method of manufacturing according to claim 15 ,
wherein the material removal is performed by means of laser ablation and/or by means of laser-induced structural change within the cover plate and/or within the side wall and subsequent etching.

17 . The method of manufacturing according to claim 14 ,
in which, after step C), at least one of the exit regions is smoothed by means of laser polishing.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Jander Peter

Classifications

• H01S5/0071

  for beam steering, e.g. using a mirror outside the cavity to change the beam direction · CPC title

• H01S5/02216 Primary

  Butterfly-type, i.e. with electrode pins extending horizontally from the housings · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title

• G02B19/0014 Primary

  at least one surface having optical power · CPC title

• G02B19/0057

  in the form of a laser diode array, e.g. laser diode bar (semiconductor laser arrays with beam combining arrangement H01S5/4012) · CPC title