Method and system for depositing a p-type oxide layer on a substrate

Patent metadata

Field	Value
Publication number	US-2022013354-A1
Application number	US-201917293872-A
Country	US
Kind code	A1
Filing date	Dec 3, 2019
Priority date	Dec 4, 2018
Publication date	Jan 13, 2022
Grant date	—

Abstract

A method and system for depositing an atomic layer on a substrate. The method performs one or more method cycles to form a p-type oxide layer, wherein a method cycle includes performing successively the steps of: exposing the substrate to a Sn(IV) or Cu(II) precursor gas, exposing the substrate to an oxygen donor gas, wherein prior to and/or after exposing the substrate to the oxygen donor gas, hydrogen radicals are exposed to the substrate.

First claim

1 . A method for depositing an atomic layer on a substrate, the method comprising performing one or more method cycles for forming a semiconductor p-type oxide layer on the substrate, wherein a method cycle includes performing successively the following:
exposing the substrate to a Sn(IV) or a Cu (II) precursor gas so as to deposit an atomic layer comprising Sn(IV) or respectively Cu(II) on the substrate; and exposing the substrate to an oxygen donor gas, wherein, in association with the method cycle, hydrogen radicals are exposed to the substrate prior to and/or after the exposing the substrate to the oxygen donor gas so as to provide reduction of Sn(IV) to Sn(II) or Sn(0), or respectively reduction of Cu(II) to Cu(I) or Cu(0).

2 . The method according to claim 1 , wherein hydrogen radicals are provided by a H 2 containing plasma.

3 . The method according to claim 1 , wherein a non-oxidizing oxygen donor gas is used, in accordance with the method cycle where the H 2 plasma is exposed prior to exposing the substrate to the oxygen donor gas.

4 . The method according to claim 1 , further including converting Sn(0) or Cu(0) to Sn(II) or Cu(I), respectively.

5 . The method according to claim 1 , wherein both the exposing the substrate to the oxygen donor gas and the exposing the hydrogen radicals to the substrate are performed at a temperature of about 250° C. or lower.

6 . The method according to claim 5 , wherein the exposing the substrate to the oxygen donor gas and exposing the hydrogen radicals to the substrate is performed at a temperature of between 100° C. and 250° C.

7 . The method according to claim 1 , wherein the forming the semiconductor p-type oxide layer on the substrate is performed under a pressure between 130 Pa and 650 kPa.

8 . The method according to any one of the preceding claim 1 , further comprising subjecting the atomic layer on the substrate including the p-type oxide layer to an annealing at a temperature between 100° C. and 250° C.

9 . The method according to claim 8 , wherein the annealing is carried out for a period of time having a duration within a range from 30 minutes to 2 hours.

10 . The method according to claim 1 , wherein the oxygen donor precursor gas is selected from the group consisting of: oxygen (O 2 ), ozone (O 3 ), water (H 2 O), hydrogen peroxide (H 2 O 2 ), carbon dioxide (CO 2 ), carbon monoxide (CO), methanol (CH 3 OH), ethanol (C 2 H 6 OH), isopropyl alcohol (C 3 H 7 OH), nitric oxide (NO), nitrous oxide (N 2 0) and combinations of two or more of the afore-mentioned compounds.

11 . The method according to claim 1 , wherein a purging step with an inert gas is carried out after one or more instances of exposing the substrate to the Sn(IV) or the Cu(II) compound, exposing the substrate to an oxygen donor gas or exposing the substrate to hydrogen radicals.

12 . A system for depositing an atomic layer on a substrate, wherein the system is configured to perform one or more method cycles for forming a p-type oxide layer, wherein the system comprises a deposition chamber with a substrate holder arranged therein, the substrate holder being configured to hold the substrate,
wherein the deposition chamber includes at least one gas supply member through which gas can be supplied to and/or removed from the deposition chamber, wherein the system further includes a controller arranged for controlling the system to successively carrying out in a method cycle the following:
supplying, through the at least one gas supply member, a Sn(IV) or a Cu(II) precursor gas to the substrate;
supplying, through the at least one gas supply member, an oxygen donor precursor gas to the substrate,
wherein hydrogen radicals are supplied to the substrate prior to and/or after exposing the substrate to the oxygen donor precursor gas so as to provide reduction of Sn(IV) to Sn(II) or Sn(0), respectively reduction of Cu(II) to Cu(I) or Cu(0).

13 . A method for forming a semiconductor device by depositing an atomic layer on a substrate by performing a plurality of method cycles according to claim 1 .

14 . A semiconductor device to which a p-type oxide layer is applied, obtained by performing the method according to claim 1 .

Assignees

• TNO

Inventors

• Frijters Cornelis Henrikus
• Poodt Paulus Willibrordus George
• Sengrian Aprizal Akbar

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• C23C16/408 Primary

  of copper or solid solutions thereof · CPC title

• C23C16/407 Primary

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title