Ultraviolet light generation target, method for manufacturing ultraviolet light generation target, and electron-beam-excited ultraviolet light source

Patent metadata

Field	Value
Publication number	US-2022013351-A1
Application number	US-201917296294-A
Country	US
Kind code	A1
Filing date	Dec 13, 2019
Priority date	Dec 17, 2018
Publication date	Jan 13, 2022
Grant date	—

Abstract

An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO 4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

First claim

1 . An ultraviolet light generation target comprising:
a light emitting portion containing a YPO 4 crystal to which at least scandium (Sc) is added, and configured to receive an electron beam to generate ultraviolet light.

2 . The ultraviolet light generation target according to claim 1 , wherein bismuth (Bi) is further added to the YPO 4 crystal.

3 . The ultraviolet light generation target according to claim 1 , wherein a molar composition ratio of Sc contained in components excluding P and O is 0.02 or more and 0.6 or less.

4 . The ultraviolet light generation target according to claim 1 , wherein a half width of a diffraction intensity peak waveform of a <200> plane of the light emitting portion measured by an X-ray diffractometer using CuKα rays is 0.25° or less.

5 . An ultraviolet light generation target manufacturing method of manufacturing the ultraviolet light generation target according to claim 1 , the method comprising:
preparing a mixture containing yttrium (Y) oxide, scandium (Sc) oxide, phosphoric acid or a phosphoric acid compound, and a liquid; evaporating the liquid; and firing the mixture.

6 . The ultraviolet light generation target manufacturing method according to claim 5 , wherein, in preparing the mixture, the mixture further containing bismuth (Bi) oxide is prepared.

7 . The ultraviolet light generation target manufacturing method according to claim 5 , wherein, in preparing the mixture, a mixing ratio of the Sc oxide excluding the phosphoric acid and the phosphoric acid compound is 1.2 mass % or more and 47.8 mass % or less.

8 . The ultraviolet light generation target manufacturing method according to claim 5 , wherein, in the third step firing the mixture, a firing temperature is 1050° C. or higher.

9 . An electron beam excited ultraviolet light source comprising:
the ultraviolet light generation target according to claim 1 ; and an electron source configured to irradiate the light emitting portion with the electron beam.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Ichikawa Norio
• Ikeda Kohei

Classifications

• C09K11/7777 Primary

  Phosphates · CPC title

• H01J63/06 Primary

  Lamps with luminescent screen excited by the ray or stream · CPC title

• H01J63/04

  Vessels provided with luminescent coatings; Selection of materials for the coatings · CPC title

• G01J1/429

  applied to measurement of ultraviolet light (using counting tubes G01T) · CPC title