Resist patterning method and resist material
US-2018356731-A1 · Dec 13, 2018 · US
US2022011672A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022011672-A1 |
| Application number | US-202117482557-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 23, 2021 |
| Priority date | Mar 28, 2019 |
| Publication date | Jan 13, 2022 |
| Grant date | — |
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The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.
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What is claimed is: 1 . A composition comprising: a compound which comprises a group represented by formula (1); and a solvent, wherein, in the formula (1), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a binding site to a part other than the group represented by the formula (1) in the compound. 2 . The composition according to claim 1 , wherein the compound is represented by formula (2): wherein, in the formula (2), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of R 1 s are identical or different from each other, a plurality of R 1 s are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and in a case in which n is 1, R 4 represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms, and in a case in which n is no less than 2, R 4 represents an organic group having a valency of n and having 1 to 40 carbon atoms. 3 . The composition according to claim 2 , wherein n in the formula (2) is no less than 2. 4 . The composition according to claim 1 , wherein the substituted or unsubstituted monovalent aliphatic hydrocarbon group which is represented by R 3 is a substituted or unsubstituted monovalent chain hydrocarbon group. 5 . The composition according to claim 1 , wherein R 3 represents a hydrogen atom. 6 . The composition according to claim 1 , wherein at least one of R 1 and R 2 represents a group represented by formula (3): wherein, in the formula (3), R 5 represents a hydrogen atom or a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; Ar represents a group obtained by removing (m +1) hydrogen atoms from an aromatic ring having 6 to 30 ring atoms; m is an integer of 1 to 3; ** denotes a binding site to a carbon atom to which R 1 or R 2 bonds in the formula (1) or the formula (2); and in a case in which m is no less than 2, a plurality of R 5 s are identical or different from each other. 7 . The composition according to claim 1 , wherein a proportion of hydrogen atoms with respect to all atoms constituting the compound is no greater than 7% by mass. 8 . The composition according to claim 1 , wherein a molecular weight of the compound is no less than 300 and no greater than 3,000. 9 . A method of forming a resist underlayer film, the method comprising: applying the composition according to claim 1 directly or indirectly on a substrate. 10 . A method of producing a patterned substrate, the method comprising: forming a resist underlayer film directly or indirectly on a substrate by applying the composition according to claim 1 ; forming a resist pattern directly or indirectly on the resist underlayer film; and carrying out etching using the resist pattern as a mask. 11 . The method according to claim 12 , further comprising, before forming the resist pattern, forming a silicon-containing film directly or indirectly on the resist underlayer film formed. 12 . A compound represented by formula (2): wherein, in the formula (2), R 1 and R 2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of les are identical or different from each other, a plurality of les are identical or different from each other, and a plurality of R 3 s are identical or different from each other; and in a case in which n is 1, R 4 represents a hydrogen atom or a monovalent organic group having 1 to 40 carbon atoms, and in a case in which n is no less than 2, R 4 represents an organic group having a valency of n and having 1 to 40 carbon atoms.
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having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title
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