Systems, compositions, and methods for enhanced electromagnetic shielding and corrosion resistance
US-11965116-B2 · Apr 23, 2024 · US
US2022010146A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2022010146-A1 |
| Application number | US-201917289322-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 12, 2019 |
| Priority date | Nov 13, 2018 |
| Publication date | Jan 13, 2022 |
| Grant date | — |
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A conductive coating comprising polymers of meso-meso, β-β doubly linked fused and/or meso-β, β-meso doubly linked fused and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins. A method for forming on a substrate a thin conductive coating of polymers of meso-meso, β-β doubly and/or meso-β, β-meso doubly and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins, the method comprising the steps of providing a substrate in a vacuum chamber, performing on the substrate an oxidative chemical vapour deposition reaction with an oxidant and at least one porphyrin monomer.
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1 . A conductive coating comprising polymers of meso-meso, β-β doubly linked fused and/or meso-β, β-meso doubly linked fused and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins, said polymers being represented as: wherein R 1 -R 8 are independently selected from the group: hydrogen, halogen, hydroxyl group, mercapto group, amino group, nitro group, carboxyl group, sulfonic acid group, substituted or non-substituted alkyl group, substituted or non-substituted aryl group, substituted or non-substituted alkoxy group, substituted or non-substituted aryloxy group, substituted or non-substituted alkylthio group, substituted or non-substituted arylthio group, alkylamino group, substituted or non-substituted arylamino group, substituted or non-substituted carboxylate group, substituted or non-substituted carboxylic acid, amino group, substituted or non-substituted sulfonate group, substituted or non-substituted sulfonamide group, substituted or non-substituted carbonyl group, substituted or non-substituted silyl group or substituted or non-substituted siloxy group; wherein M is 2H or one metal atoms selected from the group of: Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Pd, In, Pt, Sc, Y, Eu, Er, Yb, Ti, V, Nb, Ta, U, Mo, W, Ru, Os, Rh, Ir, Ag, Au, Cd, Hg, Ti, Sn, Pb, As, Sb, and Bi, wherein the polymers of general formula 1 comprises n monomers, n is superior to 2 and the monomers being the same or different. 2 . The conductive coating according to claim 1 , wherein n is superior to 50, preferentially superior to 100. 3 . The conductive coating according to claim 1 , wherein R 1 -R 8 are independently selected from the group: H, phenyl, p-tolyl, mesityl, 4-tert-butylphenyl, 3,5-di-tert-butylphenyl, 2,6-di-octyloxyphenyl, 2,6-di-dodecyloxyphenyl, 3,4,5-tri-trimethoxyphenyl, 4-carboxyphenyl, 4-hydroxyphenyl, 3-hydroxyphenyl, 3,5-di-hydroxyphenyl, 4-aminophenyl, 4-pyridyl, 4-bromophenyl, 4-chlorophenyl, 2,6-chlorophenyl, 4-fluorophenyl, 3,5-di-fluorophenyl, 2,6-di-fluorophenyl, pentafluorophenyl, 4-trifluoromethylphenyl and 3,5-di-trifluoromethylphenyl, wherein M is 2H or one metal atoms selected from the group of: Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Pd, In and Pt. 4 . A method for forming on a substrate a thin conductive coating of polymers of meso-meso, β-β doubly and/or meso-β, β-meso doubly and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins, the method comprising the steps of: providing a substrate in a vacuum chamber, performing on said substrate an oxidative chemical vapour deposition reaction with an oxidant and at least one porphyrin monomer of general formula 2: wherein at least two of R′ 1 -R′ 4 are H, the others being respectively selected independently from the group consisting of: halogen, hydroxyl group, mercapto group, amino group, nitro group, carboxyl group, sulfonic acid group, substituted or non-substituted alkyl group, substituted or non-substituted aryl group, substituted or non-substituted alkoxy group, substituted or non-substituted aryloxy group, substituted or non-substituted alkylthio group, substituted or non-substituted arylthio group, alkylamino group, substituted or non-substituted arylamino group, substituted or non-substituted carboxylate group, substituted or non-substituted carboxylic acid, amino group, substituted or non-substituted sulfonate group, substituted or non-substituted sulfonamide group, substituted or non-substituted carbonyl group, substituted or non-substituted silyl group or substituted or non-substituted siloxy group, wherein M is 2H or one metal atoms selected from the group of: Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Pd, In, Pt, Sc, Y, Eu, Er, Yb, Ti, V, Nb, Ta, U, Mo, W, Ru, Os, Rh, Ir, Ag, Au, Cd, Hg, Ti, Sn, Pb, As, Sb, and Bi. 5 . The method according to claim 4 , wherein the step of performing on said substrate an oxidative chemical vapour deposition reaction with an oxidant and at least one porphyrin monomer of formula 2 comprises sublimating separately the oxidant and the at least one porphyrin monomer in said vacuum chamber to form gaseous phases respectively and delivering said gaseous phases on the substrate. 6 . The method according to claim 4 , wherein the step performing on said substrate an oxidative chemical vapour deposition reaction with an oxidant and at least one porphyrin monomer of general formula 2 is further performing with at least one crosslinking monomer being a mono-meso-substituted porphyrin monomer and/or porphine monomer. 7 . The method according to claim 4 , wherein at least two of R′ 1 -R′ 4 are H, the others being respectively selected from the group consisting of: phenyl, p-tolyl, mesityl, 4-tert-butylphenyl, 3,5-di-tert-butylphenyl, 2,6-di-octyloxyphenyl, 2,6-di-dodecyloxyphenyl, 3,4,5-tri-trimethoxyphenyl, 4-carboxyphenyl, 4-hydroxyphenyl, 3-hydroxyphenyl, 3,5-di-hydroxyphenyl, 4-aminophenyl, 4-pyridyl, 4-bromophenyl, 4-chlorophenyl, 2,6-chlorophenyl, 4-fluorophenyl, 3,5-di-fluorophenyl, 2,6-di-fluorophenyl, pentafluorophenyl, 4-trifluoromethylphenyl and 3,5-di-trifluoromethylphenyl. 8 . The method according to claim 4 , wherein R′ 1 and R′ 3 are H and R′ 2 and R′ 4 are both selected from the group consisting of: phenyl, p-tolyl, mesityl, 4-tert-butylphenyl, 3,5-di-tert-butylphenyl, 2,6-di-octyloxyphenyl, 2,6-di-dodecyloxyphenyl, 3,4,5-tri-trimethoxyphenyl, 4-carboxyphenyl, 4-hydroxyphenyl, 3-hydroxyphenyl, 3,5-di-hydroxyphenyl, 4-aminophenyl, 4-pyridyl, 4-bromophenyl, 4-chlorophenyl, 2,6-chlorophenyl, 4-fluorophenyl, 3,5-di-fluorophenyl, 2,6-di-fluorophenyl, pentafluorophenyl, 4-trifluoromethylphenyl and 3,5-di-trifluoromethylphenyl. 9 . The method according to claim 4 , wherein the oxidant is selected from the group consisting of: FeCl 3 , CuCl 2 or Cu (ClO 4 ) 2 . 10 . The method according to claim 4 , wherein the step of performing the oxidative chemical vapour deposition reaction is performed at a pressure comprised between 10 −4 mbar to 10 −2 mbar. 11 . The method according to claim 5 , wherein the oxidant is sublimated at a temperature comprised between 100° C. and 350° C. 12 . The method according to claim 5 , wherein the at least one porphyrin monomer of general formula 2 is sublimated at a temperature comprised between 200° C. and 300° C. 13 . The method according to claim 4 , wherein the at least one porphyrin monomer of general formula 2 is a metalized 5,15-(diphenyl)porphyrin (MDPP), wherein M is one metal atoms selected from the group of: Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Pd, In, Pt. 14 . The method according to claim 4 , wherein the oxidant is FeCl 3 , sublimated between 100° C. and 200° C. 15 . The method according to claim 4 , wherein the substrate is a polymer, or paper. 16 . The method according to claim 4 , wherein the substrate is an insulating substrate selecting from the group of: glass, polymer, or paper. 17 . A device comprising a substrate and a thin conductive coating of directly fused (poly)porphyrins, wherein said thin conductive coating comprises polymers of meso-meso, β-β doubly linked fused and/or meso-β, β-meso doubly linked fused and/or meso-meso, β-β, β-β triply linked fused (poly)porphyrins, said polymers being represented as: wherein R 1 -R 8 are independently selected from the group:
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