Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits

Patent metadata

Field	Value
Publication number	US-2021396670-A1
Application number	US-202117407274-A
Country	US
Kind code	A1
Filing date	Aug 20, 2021
Priority date	Jul 13, 2018
Publication date	Dec 23, 2021
Grant date	—

Abstract

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

First claim

What is claimed is:

1 . A highly stable semiconductor laser, comprising:
a laser cavity comprising an active narrow-ridge waveguide and having a first end terminating at a facet coated with a dielectric spacer and a highly reflective metal and a second end terminating at a different position on the same facet that is coated with the same dielectric spacer and the same highly reflective metal, the highly reflective metal coating the facet preventing light from being passed from the ends of the laser cavity and being fed back into the laser cavity following interactions with external optical elements; wherein curving portions of the laser cavity allow both ends to terminate at different positions on the same highly-reflective facet; wherein a passive waveguide runs parallel to a predefined portion of the active narrow-ridge waveguide; wherein a predetermined fraction of light from the active narrow-ridge waveguide is tunably passed to the passive waveguide via evanescent coupling, the evanescent coupling to the passive waveguide providing the only pathway for coupling light into or out of the laser cavity to an optical element outside the laser cavity; and wherein an extent of the evanescent coupling between the active narrow-ridge waveguide and the passive waveguide and corresponding output from the laser cavity is tuned by tuning the distance between the active narrow-ridge waveguide and passive waveguide or by tuning the length of the laser cavity over which the active narrow-ridge waveguide and passive waveguide run in parallel.

2 . The highly stable semiconductor laser according to claim 1 , wherein the laser is an interband cascade laser (ICL), the active narrow-ridge waveguide being formed from an ICL wafer material that includes:
an n + -GaSb substrate; an n-InAs/AlSb superlattice bottom clad on an upper surface of the substrate; a bottom GaSb separate confinement layer (SCL) on an upper surface of the bottom clad; at least one active gain stage on an upper surface of the bottom GaSb SCL; an n-InAs/AlSb superlattice top clad on an upper surface of the active gain stage; and an n + -InAs or n + -InAsSb top contact layer on an upper surface of the top clad;
the active narrow-ridge waveguide further including sidewalls of the narrow ridge etched to a depth below the at least one active stage of the first ICL wafer and further including a dielectric layer deposited on the sidewalls of the ridge and a metallization layer deposited on the upper surface of the ridge to provide a top electrical contact;
wherein the n + - InAs or n + -InAsSb top contact layer, the n-InAs/AlSb superlattice top clad layer, and the active gain stages of a second ICL wafer material adjacent to the active narrow-ridge waveguide are etched away to form the passive waveguide that runs parallel to a predefined portion of the active narrow-ridge waveguide, with the etch stopping near the top of the bottom GaSb SCL so as to leave an n + -GaSb substrate, an n-InAs/AlSb superlattice bottom clad, and some or all of the bottom GaSb separate confinement layer; and
wherein the passive waveguide further comprises a ridge formed by etching the sidewalls of the passive waveguide to a depth stopping near the top of the n-InAs/AlSb superlattice bottom clad or near the bottom of the bottom GaSb SCL.

Assignees

• Us Gov Sec Navy

Inventors

• Meyer Jerry R
• Vurgaftman Igor
• Canedy Chadwick Lawrence
• Bewley William W
• Kim Chul Soo
• Merritt Charles D
• Warren Michael V
• Weiblen R Joseph
• Kim Mijin

Classifications

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/0028

  Laser diodes used as detectors · CPC title

• H01S5/4087

  emitting more than one wavelength · CPC title

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title