Semiconductor Structures Having A Micro-Battery and Methods for Making the Same

US2021384544A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2021384544-A1
Application numberUS-202117406933-A
CountryUS
Kind codeA1
Filing dateAug 19, 2021
Priority dateJan 15, 2013
Publication dateDec 9, 2021
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

First claim

Opening claim text (preview).

What is claimed is: 1 . A micro-battery structure comprising: a first substrate; a second substrate bonded with the first substrate such that a cavity is disposed between the first and second substrates; a first electrode disposed on the first substrate within the cavity, the first electrode including a first fin extending within the cavity towards the second substrate, the first fin having opposing sidewall surfaces and an end surface extending between the opposing sidewall surfaces and facing the second substrate; a second electrode disposed on the second substrate within the cavity, the second electrode having a second fin extending within the cavity towards the first substrate, the second fin having opposing sidewall surfaces and an end surface extending between the opposing sidewall surfaces and facing the first substrate, wherein one of the sidewalls of the second fin faces one of the sidewalls of the first fin; and a electrolyte disposed in the cavity between the first electrode and the second electrode. 2 . The micro-battery structure of claim 1 , wherein the first electrode further includes a third fin extending within the cavity towards the second substrate, the first fin disposed along a first side of the second fin and the third fin disposed along a second side of the second fin, the second side of the second fin being opposite the first side of the second fin. 3 . The micro-battery structure of claim 1 , wherein the electrolyte interfaces with the first and second fins. 4 . The micro-battery structure of claim 1 , wherein the electrolyte interfaces with the first and second substrates. 5 . The micro-battery structure of claim 1 , the first electrode includes a material selected from the group consisting of graphite, graphitizable carbon, nongraphitizable carbon, lithium titanium oxide (Li4Ti5O12), aluminum (Al), zinc (Zn), manganese oxide (MnO4) and lead (Pb); and wherein the second electrode includes a material selected from the group consisting of LiCoO2, LiMn2O4, LiNiCoMnO2, lithium nickel dioxide (LiNiO 2 ), CuO2 and PbO2. 6 . The micro-battery structure of claim 1 , wherein the electrolyte includes a material selected from the group consisting of NH 4 Cl, ZnCl 2 , H 2 SO 4 and polyvinyl acetate (PVAc) polymer gel. 7 . The micro-battery structure of claim 1 , further comprising: a first bonding pad disposed on the second substrate, wherein the second substrate defines a recess and the first bonding pad is disposed within the recess; a protrusion extending from the first substrate into the recess; and a second bonding pad disposed on the protrusion and interfacing with the first bonding pad. 8 . The micro-battery structure of claim 7 , wherein the electrolyte interfaces with the first and second bonding pads. 9 . A micro-battery structure comprising: a first substrate and a second substrate; a first electrode disposed on the first substrate and including a first and second fin, wherein a recess is defined between the first and second fin; a second electrode disposed on the second substrate and including a third fin extending into the recess defined between the first and second fin; and a electrolyte disposed in the recess. 10 . The micro-battery structure 9 , wherein the second electrode is formed of a different material than the first electrode. 11 . The micro-battery structure 9 , wherein the first and second substrates are bonded together by a bonding technology selected from the group consisting of an anodic bonding process, a vacuum bonding process, an adhesive bonding process, an enhanced bonding process, a plasma activation bonding process, a diffusion bonding process, an eutectic bonding process and a direct bonding process. 12 . The micro-battery structure 9 , wherein at least one the first and second substrates is formed of a semiconductor material. 13 . The micro-battery structure 9 , wherein the first substrate includes a first side facing the second substrate and a second side facing away from the first substrate, and wherein the first electrode extends from the first side to the second side of the first substrate. 14 . The micro-battery structure of claim 9 , further comprising: a first bonding pad disposed on the second substrate; a protrusion extending from the first substrate; a second bonding pad disposed directly on the protrusion and interfacing with the first bonding pad, and wherein the first electrode interfaces with the protrusion. 15 . A micro-battery structure comprising: a first semiconductor substrate and a second semiconductor substrate; a first electrode disposed directly on the first semiconductor substrate; a second electrode disposed directly on the second semiconductor substrate; a first bonding pad disposed within a trench defined by the first semiconductor substrate; a protruding feature of the second substrate extending towards the first semiconductor substrate; and a second bonding pad disposed directly on the protruding feature of the second substrate, wherein the protruding feature and the second bonding extend into the trench such that the first bonding pad is bonded to the second bonding pad. 16 . The micro-battery structure of claim 15 , wherein the first and second semiconductor substrates are formed of the same material, and wherein the first and second electrodes are formed of different materials. 17 . The micro-battery structure of claim 15 , wherein the first electrode includes first fin features and the second electrode includes second fin features. 18 . The micro-battery structure of claim 17 , wherein the at least one fin feature from the first fin feature is interdigitated with the second fin features. 19 . The micro-battery structure of claim 15 , wherein the first electrode is conformably disposed directly on the first semiconductor substrate and the second electrode is conformably disposed directly on the second semiconductor substrate. 20 . The micro-battery structure of claim 15 , wherein the first semiconductor substrate has a first side surface facing the second substrate and an opposing second side surface that faces away from the second substrate, and wherein the first electrode extends through the first semiconductor substrate from at least the second side surface to at least the first side surface.

Assignees

Inventors

Classifications

  • of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators · CPC title

  • Small-sized flat cells or batteries for portable equipment · CPC title

  • Li-accumulators · CPC title

  • Nanobatteries · CPC title

  • Processes for forming or storing electrodes in the battery container · CPC title

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What does patent US2021384544A1 cover?
The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are b…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01M10/0436. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Dec 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).