Semiconductor device, semiconductor laser, and method of producing a semiconductor device

Patent metadata

Field	Value
Publication number	US-2021376571-A1
Application number	US-202117401735-A
Country	US
Kind code	A1
Filing date	Aug 13, 2021
Priority date	Nov 1, 2016
Publication date	Dec 2, 2021
Grant date	—

Abstract

To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge on a surface of the ridge on which the transparent conductive layer is formed, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

First claim

1 . A method of producing a semiconductor device, the method comprising:
preparing a laminate that includes:
a first semiconductor layer having a first conductivity type,
a second semiconductor layer having a second conductivity type; and
an active layer between the first semiconductor layer and the second semiconductor layer;
forming a transparent conductive layer on the first semiconductor layer, wherein the transparent conductive layer comprises a transparent conductive material; forming a mask structure on the transparent conductive layer, wherein the mask structure is processed into a stripe shape; and removing at least a part of the transparent conductive layer and the first semiconductor layer, based on the mask structure, as an etching mask.

2 . The method of producing the semiconductor device according to claim 1 , wherein the mask structure is formed of a dielectric.

3 . The method of producing the semiconductor device according to claim 2 , wherein the forming the mask structure further includes
forming a dielectric layer on the transparent conductive layer, wherein the dielectric layer is formed of the dielectric; forming a photoresist on the dielectric layer, patterning the photoresist into the stripe shape, and etching the dielectric layer using the photoresist as the etching mask.

4 . The method of producing the semiconductor device according to claim 1 , wherein the mask structure is formed of a metal.

5 . The method of producing the semiconductor device according to claim 4 , wherein
the forming the mask structure further includes
forming a photoresist on the transparent conductive layer,
patterning the photoresist into a shape having a stripe-shaped opening,
forming a metal layer on the transparent conductive layer and the photoresist, and
removing the photo resist and the metal layer formed on the photoresist.

6 . The method of producing the semiconductor device according to claim 4 , wherein
the forming the mask structure further includes
forming a metal layer on the transparent conductive layer,
forming a photoresist on the metal,
patterning the photoresist into the stripe shape, and
etching the metal layer using the photoresist as the etching mask.

7 . The method of producing the semiconductor device according to claim 3 , further comprising:
after removing at least the part of the transparent conductive layer and the first semiconductor layer,
forming a pad electrode that comes into contact with the transparent conductive layer; and
forming an intermediate layer in a connection part between the pad electrode and the transparent conductive layer by heat treatment, wherein constituent elements of the pad electrode and constituent elements of the transparent conductive layer being fused in the intermediate layer.

8 . The method of producing the semiconductor device according to claim 4 , further comprising
forming, after forming the metal layer on the transparent conductive layer, an intermediate layer in a connection part between the metal layer and the transparent conductive layer by heat treatment, wherein constituent elements of the metal layer and constituent elements of the transparent conductive layer being fused in the intermediate layer.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Murayama Masahiro

Classifications

• H10F77/254

  comprising a metal, e.g. transparent gold · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S5/22 Primary

  having a ridge or stripe structure · CPC title

• H01S5/2059

  by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion · CPC title

• H01S5/04252

  characterised by the material · CPC title