Ordered array of one dimensional iron oxide nanostructures

Patent metadata

Field	Value
Publication number	US-2021371994-A1
Application number	US-201917041755-A
Country	US
Kind code	A1
Filing date	Apr 4, 2019
Priority date	Apr 6, 2018
Publication date	Dec 2, 2021
Grant date	—

Abstract

A method for forming an ordered array of one-dimensional iron oxide nanostructures involves forming an electrode on a template and forming a plurality of one-dimensional iron nanostructures in the template. A portion of the template is at least partially removed to expose a portion of each of the plurality of one-dimensional iron nanostructures. The plurality of one-dimensional iron nanostructures are annealed while the portion of each of the plurality of one-dimensional iron nanostructures is exposed to form an ordered array of iron-oxide one-dimensional nanostructures. The at least partial removal of the portion of the template involves complete removal of the template or a partial removal so that top portion of each of the plurality of one-dimensional iron nanostructures is exposed and a bottom portion of each of the plurality of one-dimensional iron nanostructures is within the template during annealing.

First claim

1 . A method, comprising:
forming an electrode on a template; forming a plurality of one-dimensional iron nanostructures in the template; at least partially removing a portion of the template to expose a portion of each of the plurality of one-dimensional iron nanostructures; annealing the plurality of one-dimensional iron nanostructures while the portion of each of the plurality of one-dimensional iron nanostructures is exposed to form an ordered array of iron-oxide one-dimensional nanostructures, wherein the at least partial removal of the portion of the template comprises complete removal of the template or a partial removal so that a top portion of each of the plurality of one-dimensional iron nanostructures is exposed and a bottom portion of each of the plurality of one-dimensional iron nanostructures is within the template during annealing.

2 . The method of claim 1 , further comprising:
forming the template having a plurality of pores, wherein the plurality of one-dimensional iron nanostructures are formed in the plurality of pores and the metallic electrode is formed on a bottom surface of the template.

3 . The method of claim 2 , wherein the pores have a pattern of specific inter-pore distance, pore geometry and pore location across the template.

4 . The method of claim 2 , wherein the formation of the template comprises:
providing a metallic template; and anodizing the metallic template and forming the plurality of pores.

5 . The method of claim 4 , wherein the plurality of pores are formed having a size so that the one-dimensional iron nanostructures are nanorods.

6 . The method of claim 4 , wherein the plurality of pores are formed having a size so that the one-dimensional iron nanostructures are nanowires.

7 . The method of claim 2 , further comprising:
forming a substrate on a bottom of the metallic electrode after the plurality of iron nanostructures are formed in the template, wherein the electrode is interposed between the bottom of the template and the substrate.

8 . The method of claim 1 , wherein the annealing is performed at a temperature to form magnetite phased iron-oxide one-dimensional nanostructures.

9 . The method of claim 1 , wherein the annealing is performed at a temperature to form hematite phased iron-oxide one-dimensional nanostructures.

10 . A semiconductor device, comprising:
a substrate; a metallic electrode arranged on top of the substrate; and an ordered array of iron-oxide nanostructures attached to and rising from the metallic electrode.

11 . The semiconductor device of claim 10 , further comprising:
a template arranged on top of the metallic electrode, wherein the template covers a bottom portion of each of the plurality of one-dimensional iron nanostructures and leaves exposed a top portion of each of the plurality of one-dimensional iron nanostructures.

12 . The semiconductor device of claim 10 , wherein the iron-oxide nanostructures are nanorods.

13 . The semiconductor device of claim 10 , wherein the iron-oxide nanostructures are nanowires.

14 . The semiconductor device of claim 10 , wherein the iron-oxide nanostructures have a magnetite phase.

15 . The semiconductor device of claim 10 , wherein the iron-oxide nanostructures have a hematite phase.

16 . A water splitting device, comprising:
a counter electrode; a voltage source electrically coupled to the counter electrode; and a working electrode electrically coupled to the counter electrode via the voltage source, the working electrode comprising
a substrate;
a metallic electrode arranged on top of the substrate; and
an ordered array of one-dimensional iron-oxide nanostructures attached to and rising from the metallic electrode.

17 . The water splitting device of claim 16 , wherein the iron-oxide nanostructures are nanorods.

18 . The water splitting device of claim 16 , wherein the iron-oxide nanostructures are nanowires.

19 . The water splitting device of claim 16 , wherein the iron-oxide nanostructures have a magnetite phase.

20 . The water splitting device of claim 16 , wherein the iron-oxide nanostructures have a hematite phase.

Assignees

• Univ King Abdullah Sci & Tech

Inventors

• Kosel Jürgen
• Moreno Julian Alberto

Classifications

• C25B9/17

  Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C25B11/077 Primary

  the compound being a non-noble metal oxide · CPC title

• C25B11/087

  Photocatalytic compound · CPC title

• C25B1/04 Primary

  by electrolysis of water · CPC title