Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
US2021356863A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021356863-A1 |
| Application number | US-202117302667-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 10, 2021 |
| Priority date | May 18, 2020 |
| Publication date | Nov 18, 2021 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal. The composition includes an acid generator which generates an acid by irradiation of active rays or radioactive rays; and a compound and/or a precursor compound, in which the molar absorption coefficient ε at a wavelength of 365 nm of the compound is at least 3000, the compound has a metal coordination group, and the compound can be formed from the precursor compound during formation of the patterned resist film.
Opening claim text (preview).
What is claimed is: 1 . A chemically amplified photosensitive composition used for forming a patterned resist film by photolithography on a metal surface of a substrate which at least partly has a surface consisting of metal, the composition comprising: an acid generator (A) which generates an acid by irradiation of active rays or radioactive rays; and a compound (C1) and/or a precursor compound (C2), wherein molar absorption coefficient s at a wavelength of 365 nm of the compound (C1) is at least 3000, wherein the compound (C1) has a metal coordination group, and wherein the compound (C1) can be formed from the precursor compound (C2) during formation of the patterned resist film. 2 . The chemically amplified photosensitive composition according to claim 1 , wherein the metal coordination group of the compound (C1) is a mercapto group. 3 . The chemically amplified photosensitive composition according to claim 2 , wherein the compound (C1) is a compound represented by Formula (C1-1) below: Ar—Y 3 —Y 2 —Y 1 —SH (C1-1), wherein Y 1 is a single bond or an alkylene group having 1 or more and 5 or less carbon atoms, Y 2 is —CO—O— or —O—OO—, Y 3 is a single bond or an alkylene group having 1 or more and 5 or less carbon atoms, and Ar is an aromatic group which may have a substituent. 4 . The chemically amplified photosensitive composition according to claim 1 , wherein the metal is copper. 5 . The chemically amplified photosensitive composition according to claim 1 , further comprising a resin (B) for which solubility in alkali increases by action of acid, wherein the chemically amplified photosensitive composition is positive-type. 6 . The chemically amplified photosensitive composition photosensitive composition according to claim 5 , further comprising an alkali-soluble resin (D). 7 . The chemically amplified photosensitive composition photosensitive composition according to claim 6 , wherein the alkali-soluble resin (D) comprises at least one type of resin selected from the group consisting of a novolac resin (D1), polyhydroxystyrene resin (D2) and acrylic resin (D3). 8 . A photosensitive dry film comprising a base film, and a photosensitive layer formed on a surface of the base film, wherein the photosensitive layer comprises the chemically amplified photosensitive composition photosensitive composition according to claim 1 . 9 . A production method for a patterned resist film, the method comprising: laminating a photosensitive layer consisting of the chemically amplified photosensitive composition photosensitive composition according to claim 1 on a metal surface of a substrate which at least partly has a surface consisting of metal; position-selectively irradiating active rays or radioactive rays onto the photosensitive layer; and developing the photosensitive layer after exposure. 10 . A production method for a plated article, the method comprising: producing a patterned resist film on a metal surface of a substrate which at least partly has a surface consisting of metal using the production method for a patterned resist film according to claim 9 ; and forming a plated article using the resist film which was patterned as a template. 11 . A compound represented by Formula (C2-1) below: Ar—Y 3 —Y 2 —Y 1 —S—S—Y 1 —Y 2 —Y 3 —Ar (C2-1) Wherein Y 1 is a single bond or an alkylene group having 1 or more and 5 or less carbon atoms, Y 2 is —CO—O— or —O—OO—, Y 3 is a single bond or an alkylene group having 1 or more and 5 or less carbon atoms, and Ar is an aromatic group which may have a substituent. 12 . The compound according to claim 11 , wherein the Ar is a phenyl group substituted by an alkoxy group having 1 or more and 5 or less carbon atoms, and a nitro group. 13 . A method for producing the compound according to claim 11 , comprising condensing a compound represented by Formula (C2-1a) below and a compound represented by Formula (C2-1b) below, or condensing a compound represented by Formula (C2-1c) below and a compound represented by Formula (C2-1d) below: Ar—Y 3 —OH (C2-1a) Y 4 —CO—Y 1 —S—S—Y 1 —CO—Y 4 (C2-1b) Ar—Y 3 —CO—Y 4 (C2-1c) HO—Y 1 —S—S—Y 1 —OH (C2-1d) wherein, in Formula (C2-1a), Formula (C2-1b), Formula (C2-1c) and Formula (C2-1d), Y 1 , Y 2 , Y 3 and Ar are the same as in Formula (C2-1), and Y 4 is a hydroxyl group or a halogen atom. 14 . A method for producing the compound represented by Formula (C1-1) below, the method comprising reducing the compound according to claim 11 to generate a compound represented by Formula (C1-1) below: Ar—Y 3 —Y 2 —Y 1 —SH (C1-1) wherein Y 1 , Y 2 , Y 3 and Ar are the same as in Formula (C2-1).
Semiconductors · CPC title
using masking means · CPC title
Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
the macromolecular compound being present in a chemically amplified positive photoresist composition · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.