Oxide sintered body, sputtering target and oxide semiconductor film

Patent metadata

Field	Value
Publication number	US-2021355033-A1
Application number	US-202117358411-A
Country	US
Kind code	A1
Filing date	Jun 25, 2021
Priority date	Apr 26, 2016
Publication date	Nov 18, 2021
Grant date	—

Abstract

An oxide sintered body is characterized in that it comprises an oxide including an In element, a Zn element, a Sn element and a Y element and that a sintered body density is equal to or more than 100.00% of a theoretical density.

First claim

1 . An oxide sintered body comprising an oxide including an In element, a Zn element, a Sn element and a Y element, wherein the oxide sintered body is mainly composed of the bixbyite phase represented by In 2 O 3 .

2 . The oxide sintered body according to claim 1 , wherein the proportion of presence of the bixbyite phase represented by In 2 O 3 in the oxide sintered body is equal to or more than 50 to 99 wt %.

3 . The oxide sintered body according to claim 1 , wherein the three-point bending strength of the oxide sintered body is equal to or more than 120 MPa.

4 . The oxide sintered body according to claim 1 , wherein the coefficient of linear expansion of the oxide sintered body is equal to or less than 8.0×10 −6 (K −1 ).

5 . The oxide sintered body according to claim 1 , wherein the oxide sintered body includes an indium trizincoindate phase represented by In((Zn 3 In)O 6 ).

6 . The oxide sintered body according to claim 1 , wherein the oxide sintered body density is equal to or more than 100.00% of a theoretical density.

7 . The oxide sintered body according to claim 1 , wherein the oxide sintered body includes a pyrochlore phase represented by Y 2 Sn 2 O 7 .

8 . The oxide sintered body according to claim 1 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

9 . The oxide sintered body according to claim 1 , wherein atomic ratios of the Zn element, the Y element, the Sn element and the In element are within the following ranges:
0.01≤Zn/(In+Zn+Y+Sn)≤0.25,
0.03≤Y/(In+Zn+Y+Sn)≤0.25,
0.03≤Sn/(In+Zn+Y+Sn)≤0.30, and
0.20≤In/(In+Zn+Y+Sn)≤0.93.

10 . The oxide sintered body according to claim 1 , wherein atomic ratios of the Zn element and the In element are within ranges below, and
the sintered oxide body includes no spinel phase represented by Zn 2 SnO 4 ,
0.01≤Zn/(In+Zn+Y+Sn)≤0.25

0.50≤In/(In+Zn+Y+Sn)

11 . The oxide sintered body according to claim 10 , wherein the oxide sintered body includes a pyrochlore phase represented by Y 2 Sn 2 O 7 .

12 . The oxide sintered body according to claim 11 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

13 . The oxide sintered body according to claim 10 , wherein atomic ratios of the Y element and the Sn element are within the following ranges:
0.03≤Y/(In+Zn+Y+Sn)≤0.25, and
0.03≤Sn/(In+Zn+Y+Sn)≤0.30.

14 . The oxide sintered body according to claim 1 , wherein atomic ratios of the Zn element and the In element are within ranges below, wherein
the oxide sintered body consists of a bixbyite phase represented by In 2 O 3 and a pyrochlore phase represented by Y 2 Sn 2 O 7 , or the oxide sintered body consists of a bixbyite phase represented by In 2 O 3 , a pyrochlore phase represented by Y 2 Sn 2 O 7 and an indium trizincoindate phase represented by In((Zn 3 In)O 6 ),
0.01≤Zn/(In+Zn+Y+Sn)≤0.25

0.50≤In/(In+Zn+Y+Sn)

15 . The oxide sintered body according to claim 14 , wherein any one or more of the Y element and the Zn element form a substitutional solid solution with the bixbyite phase.

16 . The oxide sintered body according to claim 14 , wherein atomic ratios of the Y element and the Sn element are within the following ranges:
0.03≤Y/(In+Zn+Y+Sn)≤0.25, and
0.03≤Sn/(In+Zn+Y+Sn)≤0.30.

17 . A sputtering target comprising the oxide sintered body according to claim 1 .

18 . An oxide semiconductor film formed by sputtering a sputtering target according to claim 1 .

19 . The oxide semiconductor film according to claim 18 , wherein the oxide semiconductor film is amorphous.

20 . A thin-film transistor comprising the oxide semiconductor film according to claim 18 .

Assignees

• Idemitsu Kosan Co

Inventors

• Inoue Kazuyoshi
• Utsuno Futoshi
• Tomai Shigekazu
• Shibata Masatoshi
• Itose Mami

Classifications

• H10P14/3454

  Amorphous · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3426

  Oxides · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title