Light emitting display device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2021328107-A1
Application number	US-202017113837-A
Country	US
Kind code	A1
Filing date	Dec 7, 2020
Priority date	Apr 21, 2020
Publication date	Oct 21, 2021
Grant date	—

Abstract

A light emitting display device includes a substrate including a display area and a non-display area adjacent to the display area; a lower pad electrode on the substrate in the non-display area; a planarization layer overlapping the lower electrode; an upper pad electrode on the lower pad electrode and overlapping at least a portion of the lower planarization layer. The planarization layer includes an opening exposing an upper surface of the lower pad electrode, the lower pad electrode and the upper pad electrode are electrically connected to each other through the opening, the lower planarization layer includes an exposed portion exposing an upper surface of the lower planarization layer, and an overlapping portion overlapping at least a portion of the upper pad electrode, and a height of the upper surface of the exposed portion is lower than a height of an upper surface of the overlapping portion.

First claim

What is claimed is:

1 . A light emitting display device comprising:
a substrate that includes a display area and a non-display area adjacent to the display area; a lower pad electrode disposed on the substrate in the non-display area; a planarization layer that overlaps a portion of the lower pad electrode; and an upper pad electrode disposed on the lower pad electrode and overlapping at least a portion of the planarization layer, wherein the planarization layer includes an opening that exposes an upper surface of the lower pad electrode, the lower pad electrode and the upper pad electrode are electrically connected to each other through the opening, the planarization layer includes:
an exposed portion that exposes an upper surface of the planarization layer; and
an overlapping portion that overlaps at least a portion of the upper pad electrode, and
a height of the upper surface of the exposed portion of the planarization layer is lower than a height of an upper surface of the overlapping portion of the planarization layer.

2 . The light emitting display device of claim 1 , wherein
the upper pad electrode includes an upper layer including titanium (Ti), an intermediate layer including aluminum (Al), and a lower layer including titanium (Ti), and the lower pad electrode includes an upper layer including titanium (Ti), an intermediate layer including aluminum (Al), and a lower layer including titanium (Ti).

3 . The light emitting display device of claim 1 , wherein
the planarization layer includes at least one of a polyimide, a polyamide, an acrylic resin, benzocyclobutene, and a phenol resin.

4 . The light emitting display device of claim 1 , wherein
the display area includes:
a semiconductor layer disposed on the substrate;
a gate insulating layer that overlaps the semiconductor layer;
a gate electrode disposed on the gate insulating layer;
an interlayer insulating layer that overlaps the gate electrode; and
a source electrode and a drain electrode that are disposed on the interlayer insulating layer and electrically connected to the semiconductor layer, and
the lower pad electrode, the source electrode, and the drain electrode are disposed on a same layer.

5 . The light emitting display device of claim 4 , further comprising:
a pixel electrode disposed on the planarization layer; an emission layer disposed on the pixel electrode; and a common electrode disposed on the emission layer, wherein the planarization layer overlaps the source electrode and the drain electrode, and includes a via hole, and the drain electrode and the pixel electrode are electrically connected by the via hole.

6 . The light emitting display device of claim 5 , wherein
the display area includes:
an encapsulation layer that overlaps the common electrode;
a sensing insulating layer disposed on the encapsulation layer;
sensing electrodes disposed on the sensing insulating layer; and
an inorganic passivation layer that overlaps the sensing electrodes, and
the sensing electrodes and the upper pad electrode are disposed on a same layer.

7 . The light emitting display device of claim 6 , further comprising:
a buffer layer disposed between the encapsulation layer and the sensing insulating layer and disposed between the lower pad electrode and the upper pad electrode, wherein the lower pad electrode and the upper pad electrode are electrically connected to each other.

8 . A light emitting display device comprising:
a substrate that includes a display area and a non-display area adjacent to the display area; a first lower pad electrode and a second lower pad electrode that are spaced apart from each other and disposed in the non-display area; a first lower planarization layer that at least partially overlaps the first lower pad electrode; a second lower planarization layer that at least partially overlaps the second lower pad electrode; a first upper pad electrode that overlaps the first lower pad electrode and the first lower planarization layer; a second upper pad electrode that overlaps the second lower pad electrode and the second lower planarization layer; and a light blocking member that at least partially overlaps the first upper pad electrode and the second upper pad electrode, wherein the first upper pad electrode and the second upper pad electrode are disposed on a same layer.

9 . The light emitting display device of claim 8 , wherein
an upper surface of the light blocking member is higher than upper surfaces of the first upper pad electrode and the second upper pad electrode.

10 . The light emitting display device of claim 8 , wherein
each of the first upper pad electrode and the second upper pad electrode includes an upper layer including titanium (Ti), an intermediate layer including aluminum (Al), and a lower layer including titanium (Ti), and each of the first lower pad electrode and the second lower pad electrode includes an upper layer including titanium (Ti), an intermediate layer including aluminum (Al), and a lower layer including titanium (Ti).

11 . The light emitting display device of claim 10 , wherein
a distance from an end of the first lower pad electrode to an end of the second lower pad electrode is in a range of about 10 μm to about 20 μm.

12 . The light emitting display device of claim 10 , wherein
a distance from an end of the first upper pad electrode to an end of the second upper pad electrode is about 10 μm or less.

13 . The light emitting display device of claim 10 , wherein
the display area includes:
a semiconductor layer disposed on the substrate;
a gate insulating layer that overlaps the semiconductor layer;
a gate electrode disposed on the gate insulating layer;
an interlayer insulating layer that overlaps the gate electrode; and
a source electrode and a drain electrode that are disposed on the interlayer insulating layer and electrically connected to the semiconductor layer, and
the lower pad electrode, the source electrode, and the drain electrode are disposed on a same layer.

14 . The light emitting display device of claim 13 , further comprising:
a pixel electrode disposed on the first lower planarization layer; an emission layer disposed on the pixel electrode; a common electrode disposed on the emission layer; an encapsulation layer disposed on the common electrode; and sensing electrodes disposed on a sensing insulating layer, wherein, the sensing insulating layer is disposed on the encapsulation layer in the display area, the first lower planarization layer overlaps the source electrode and the drain electrode, and the sensing electrodes and the upper pad electrode are disposed on a same layer.

15 . The light emitting display device of claim 14 , further comprising:
a buffer layer disposed between the encapsulation layer and the sensing insulating layer, disposed between the first lower pad electrode and the first upper pad electrode, and disposed between the second lower pad electrode and the second upper pad electrode, wherein the first lower pad electrode is electrically connected to the first upper pad electrode, and the second lower pad electrode is electrically connected to the second upper pad electrode.

16 . A manufacturing method of a light emitting display device, comprising:
forming a gate insulating layer and an interlayer insulating layer on a substrate; forming a source electrode and a drain electrode on the interlayer insulating layer in a display area of the substrate; forming a lower pad electrode on the interlayer insul

Assignees

• Samsung Display Co Ltd

Inventors

• An Chi Wook
• Cho Seong Min
• Ji Mi-Ran
• Kim Chan Young
• Lee Yeong Ho

Classifications

• H10K59/12 Primary

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• H01L25/0753

  Electricity · mapped topic

• H01L33/38

  Electricity · mapped topic

• H01L33/44 Primary

  Electricity · mapped topic