Diode
US-11355594-B2 · Jun 7, 2022 · US
Semiconductor device
US2021320179A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021320179-A1 |
| Application number | US-201917259622-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 10, 2019 |
| Priority date | Jul 12, 2018 |
| Publication date | Oct 14, 2021 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.
First claim
Opening claim text (preview).
1 . A semiconductor device, comprising: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode. 2 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors are embedded in the electrode. 3 . The semiconductor device according to claim 1 , wherein three p-type semiconductors are provided between the n-type semiconductor layer and the electrode. 4 . The semiconductor device according to claim 1 , wherein the n-type semiconductor layer contains an oxide semiconductor as a major component. 5 . The semiconductor device according to claim 1 , wherein the n-type semiconductor layer contains gallium compound as a major component. 6 . The semiconductor device to claim 1 , wherein the n-type semiconductor layer contains a crystalline oxide semiconductor having a corundum structure or a hexagonal structure as a major component. 7 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors is an oxide semiconductor, and wherein the oxide semiconductor contains one or more metals selected from Group 13 and Group 9 of the periodic table. 8 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors contains an oxide semiconductor containing gallium. 9 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors are crystalline oxide semiconductors having a corundum structure or a hexagonal structure. 10 . The semiconductor device according to claim 1 , wherein ten or more p-type semiconductors are provided between the n-type semiconductor layer and the electrode 11 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors are epitaxially grown on the n-type semiconductor layer. 12 . The semiconductor device according to claim 1 , wherein the one or more p-type semiconductors include a lateral-growth area. 13 . The semiconductor device according to claim 1 , wherein the semiconductor device is a diode. 14 . The semiconductor device according to claim 1 , wherein the semiconductor device is a Junction barrier Schottky diode. 15 . The semiconductor device according to claim 1 , wherein the semiconductor device is a power device. 16 . A semiconductor system, comprising: a semiconductor device according to claim 1 .
Assignees
Inventors
Classifications
using solutions · CPC title
P-type · CPC title
N-type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title
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Frequently asked questions
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- What does patent US2021320179A1 cover?
- A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is pro…
- Who is the assignee on this patent?
- Flosfia Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D64/23. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 14 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).