Negative electrode active material for lithium secondary battery and method of preparing the same
US-11075369-B2 · Jul 27, 2021 · US
US2021313557A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021313557-A1 |
| Application number | US-202117354060-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 22, 2021 |
| Priority date | Sep 24, 2015 |
| Publication date | Oct 7, 2021 |
| Grant date | — |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
The present specification relates to a negative electrode active material including an amorphous silicon-based composite represented by SiO a (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite, and provides a negative electrode active material in which the crystal growth of crystalline silicon in a silicon-based composite prepared by thermal reduction with a metal reducing agent is suppressed in a state where a carbon coating layer is formed, and the ratio of silicon in the composite is high, and a method of preparing the same.
Opening claim text (preview).
1 . A negative electrode active material, comprising: a silicon-based composite represented by SiO a (0<a<1); and a carbon coating layer distributed on a surface of the silicon-based composite; wherein the silicon-based composite includes amorphous silicon. 2 . The negative electrode active material according to claim 1 , wherein the silicon-based composite further includes crystalline silicon having a crystal size of 10 nm or less. 3 . The negative electrode active material according to claim 1 , wherein the silicon-based composite further includes a crystalline silicon oxide. 4 . The negative electrode active material according to claim 2 , wherein an amount of the crystalline silicon in the silicon-based composite is 10 wt % or less based on the total weight of silicon. 5 . The negative electrode active material according to claim 1 , wherein a thickness of the carbon coating layer is in a range of 0.003 to 3.0 μm. 6 . The negative electrode active material according to claim 1 , wherein an average particle diameter of the negative electrode active material is in a range of 0.1 to 20 μm. 7 . The negative electrode active material according to claim 1 , wherein an average particle diameter of the negative electrode active material is in a range of 0.5 to 10 μm. 8 . The negative electrode active material according to claim 1 , wherein a content of the carbon coating layer is in a range of 1 to 50 wt % of a total weight of the negative electrode active material. 9 . The negative electrode active material according to claim 1 , wherein the carbon coating layer includes one or more selected from the group consisting of natural graphite, artificial graphite, mesocarbon microbeads (MCMB), carbon fibers and carbon black. 10 . The negative electrode active material according to claim 1 , wherein the silicon-based composite further includes crystalline silicon having a crystal size of 10 nm or less. 11 . The negative electrode active material according to claim 1 , wherein the negative electrode active material is formed by a method including: forming a carbon coating layer on a silicon-based precursor represented by SiO x (0<x<2); thermally treating the silicon-based precursor on which the carbon coating layer is formed; and preparing a silicon-based composite represented by SiO a (0<a<1) and having a surface on which a carbon coating layer is distributed by removing impurities; wherein the silicon-based composite includes an amorphous silicon, the thermal treatment includes thermally reducing a silicon-based precursor with a metal reducing agent in an inert atmosphere, and the thermal treatment is performed in a temperature range of 350 to 650° C. 12 . The negative electrode active material according to claim 11 , wherein the thermal treatment is performed in a rotary kiln. 13 . The negative electrode active material according to claim 11 , wherein the metal reducing agent includes one selected from the group consisting of Ti, Al, Mg, Ca, Be, Sr, Ba and a combination thereof. 14 . The negative electrode active material according to claim 11 , wherein a molar ratio of the silicon-based precursor to the metal reducing agent is in a range of 1:0.001 to 1:1. 15 . The negative electrode active material according to claim 11 , wherein the preparing of the silicon-based composite includes removing impurities using an acidic aqueous solution. 16 . The negative electrode active material according to claim 11 , wherein the acidic aqueous solution includes one or more selected from the group consisting of hydrochloric acid, nitric acid and sulfuric acid. 17 . The negative electrode active material according to claim 11 , wherein the impurities include one or more materials selected from the group consisting of a metal oxide, a metal silicide and a metal silicate, and the metal is one selected from the group consisting of Ti, Al, Mg, Ca, Be, Sr, Ba and a combination thereof. 18 . A negative electrode comprising the negative electrode active material of claim 1 . 19 . A secondary battery comprising the negative electrode of claim 18 .
Related publications grouped by family.
Answers are generated from the same data shown on this page.