Semiconductor device and display device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-2021305433-A1
Application number	US-202117346359-A
Country	US
Kind code	A1
Filing date	Jun 14, 2021
Priority date	Jan 29, 2016
Publication date	Sep 30, 2021
Grant date	—

Abstract

A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.

First claim

1 . A semiconductor device comprising:
a glass substrate; and a channel-etched transistor comprising:
a gate electrode over and in contact with the glass substrate;
a first insulating film over and in contact with a side surface of the gate electrode;
a second insulating film over the first insulating film;
an oxide semiconductor film comprising a region which overlaps with the gate electrode with the first insulating film and the second insulating film therebetween;
a source electrode over and electrically connected to the oxide semiconductor film;
a drain electrode over and electrically connected to the oxide semiconductor film;
a third insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;
a pixel electrode electrically connected one the source electrode and the drain electrode; and
a conductive film comprising copper overlapping with a channel formation region of the oxide semiconductor film, the gate electrode, and the other of the source electrode and the drain electrode,
wherein the source electrode and the drain electrode each comprise a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film, wherein the second conductive film includes a first element, the first element being copper, wherein the first conductive film and the third conductive film comprise a same second element, wherein the first element differs from the second element, wherein the oxide semiconductor film comprises indium, gallium, and zinc, wherein an end portion of the first conductive film includes a region which protrudes farther than a region of an end portion of the second conductive film and an end portion of the third conductive film, and wherein the end portion of the first conductive film has a tapered shape.

2 . A semiconductor device comprising:
a glass substrate; and a channel-etched transistor comprising:
a gate electrode over and in contact with the glass substrate;
a first insulating film over and in contact with a side surface of the gate electrode;
a second insulating film over the first insulating film;
an oxide semiconductor film comprising a region which overlaps with the gate electrode with the first insulating film and the second insulating film therebetween;
a source electrode over and electrically connected to the oxide semiconductor film;
a drain electrode over and electrically connected to the oxide semiconductor film;
a third insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;
a pixel electrode electrically connected one the source electrode and the drain electrode; and
a conductive film overlapping with a channel formation region of the oxide semiconductor film, the gate electrode, and the other of the source electrode and the drain electrode,
wherein the source electrode and the drain electrode each comprise a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film, wherein the second conductive film includes a first element, the first element being copper, wherein the first conductive film and the third conductive film comprise a same second element, wherein the first element differs from the second element, wherein the oxide semiconductor film comprises indium, gallium, and zinc, and wherein an end portion of the first conductive film includes a region which protrudes farther than a region of an end portion of the second conductive film and an end portion of the third conductive film.

3 . A semiconductor device comprising:
a glass substrate; and a channel-etched transistor comprising:
a gate electrode over and in contact with the glass substrate;
a first insulating film over and in contact with a side surface of the gate electrode;
a second insulating film over the first insulating film;
an oxide semiconductor film comprising a region which overlaps with the gate electrode with the first insulating film and the second insulating film therebetween;
a source electrode over and electrically connected to the oxide semiconductor film;
a drain electrode over and electrically connected to the oxide semiconductor film;
a third insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;
a pixel electrode electrically connected one the source electrode and the drain electrode; and
a conductive film comprising copper overlapping with a channel formation region of the oxide semiconductor film, the gate electrode, and the other of the source electrode and the drain electrode; and
a light-transmitting conductive film overlapping with the conductive film, the channel formation region of the oxide semiconductor film, the gate electrode, and the other of the source electrode and the drain electrode,
wherein the source electrode and the drain electrode each comprise a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film, wherein the second conductive film includes a first element, the first element being copper, wherein the first conductive film and the third conductive film comprise a same second element, wherein the first element differs from the second element, wherein the oxide semiconductor film comprises indium, gallium, and zinc, wherein an end portion of the first conductive film includes a region which protrudes farther than a region of an end portion of the second conductive filnm and an end portion of the third conductive film, wherein the end portion of the first conductive film has a tapered shape, and wherein an area, comprising a region of the gate electrode overlapping with the source electrode and a region of the gate electrode overlapping with the drain electrode, is larger than an area, comprising a region of the gate electrode overlapping with the channel formation region.

4 . The semiconductor device according to claim 1 , wherein an end portion of the gate electrode extends beyond an end portion of the oxide semiconductor film.

5 . The semiconductor device according to claim 2 , wherein an end portion of the gate electrode extends beyond an end portion of the oxide semiconductor film.

6 . The semiconductor device according to claim 3 , wherein an end portion of the gate electrode extends beyond an end portion of the oxide semiconductor film.

7 . The semiconductor device according to claim 1 , wherein the first conductive film and the third conductive film are thinner than the second conductive film.

8 . The semiconductor device according to claim 2 , wherein the first conductive film and the third conductive film are thinner than the second conductive film.

9 . The semiconductor device according to claim 3 , wherein the first conductive film and the third conductive film are thinner than the second conductive film.

10 . The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises a crystal part, and wherein the crystal part has c-axis alignment.

11 . The semiconductor device according to claim 2 ,
wherein the oxide semiconductor film comprises a crystal part, and wherein the crystal part has c-axis alignment.

12 . The semiconductor device according to claim 3 ,
wherein the oxide semiconductor film comprises a crystal part, and wherein the crystal part has c-axis alignment.

13 . The semiconductor device according to c

Assignees

• Semiconductor Energy Lab

Inventors

• Nakazawa Yasutaka
• Koezuka Junichi
• Hamochi Takashi

Classifications

• H10W20/048

  by using plasmas or gaseous environments, e.g. by nitriding · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6713

  characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes · CPC title