Light detector, light detection system, lidar device, and vehicle

Patent metadata

Field	Value
Publication number	US-2021293967-A1
Application number	US-202017015774-A
Country	US
Kind code	A1
Filing date	Sep 9, 2020
Priority date	Mar 23, 2020
Publication date	Sep 23, 2021
Grant date	—

Abstract

According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.

First claim

What is claimed is:

1 . A light detector, comprising:
an element including
a first semiconductor region of a first conductivity type,
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of the first conductivity type, an impurity concentration of the first conductivity type in the second semiconductor region being greater than an impurity concentration of the first conductivity type in the first semiconductor region, and
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of a second conductivity type; and
a structure body provided around the element in a first plane perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region, the structure body including
a first insulating portion,
a metal-including portion provided above the first insulating portion, a position in the first direction of at least a portion of the metal-including portion being same as a position in the first direction of the third semiconductor region, and
a second insulating portion provided above the first insulating portion, the second insulating portion being positioned between the metal-including portion and the element in the first plane,
a thickness in the first direction of the first insulating portion being greater than a thickness of the second insulating portion in the first plane between the element and the metal-including portion.

2 . The light detector according to claim 1 , wherein
a position in the first direction of a portion of the metal-including portion is same as a position in the first direction of an interface between the second semiconductor region and the third semiconductor region.

3 . The light detector according to claim 2 , further comprising:
a conductive layer, the element and the structure body being provided on the conductive layer, the structure body being separated from the conductive layer.

4 . The light detector according to claim 2 , further comprising:
a conductive layer, the element and the structure body being provided on the conductive layer, the structure body contacting the conductive layer.

5 . The light detector according to claim 1 , further comprising:
an interconnect provided above the third semiconductor region and electrically connected to the third semiconductor region; and a quenching part electrically connected between the third semiconductor region and the interconnect.

6 . The light detector according to claim 5 , wherein
an upper end of the metal-including portion is positioned above the third semiconductor region and positioned lower than the interconnect.

7 . The light detector according to claim 1 , wherein
a void is provided in the first insulating portion.

8 . The light detector according to claim 1 , wherein
the second semiconductor region and the third semiconductor region contact the structure body.

9 . The light detector according to claim 1 , wherein
a portion of the third semiconductor region contacts the first semiconductor region in the first direction.

10 . The light detector according to claim 1 , wherein
the first insulating portion and the second insulating portion include silicon and at least one selected from the group consisting of oxygen and nitrogen.

11 . The light detector according to claim 1 , wherein
the metal-including portion includes at least one selected from the group consisting of tungsten, aluminum, and copper.

12 . A light detector, comprising:
an element including
a first semiconductor region of a first conductivity type,
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor region, and
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of a second conductivity type;
a structure body provided around the element in a first plane perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region, the structure body including
a first portion,
a second portion provided above the first portion, and
a third portion provided above the first portion and positioned between the second portion and the element,
a refractive index of a material included in the first and third portions being less than a refractive index of a semiconductor material included in the element, the second portion reflecting or absorbing light more easily than the first and third portions.

13 . A light detector, comprising:
an element including
a first semiconductor region of a first conductivity type,
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of the first conductivity type and having a higher first-conductivity-type impurity concentration than the first semiconductor region, and
a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of a second conductivity type; and
a structure body provided around the element in a first plane perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region, the structure body including an insulating material, the structure body including a lower portion and an upper portion, a width of the lower portion being less than a width of the upper portion, a void being provided in the lower portion.

14 . The light detector according to claim 1 , wherein
the element includes an avalanche photodiode operating in a Geiger mode.

15 . A light detection system, comprising:
the light detector according to claim 1 ; and a distance measuring circuit calculating a time-of-flight of light from an output signal of the light detector.

16 . A lidar device, comprising:
a light source irradiating light onto an object; and the light detection system according to claim 15 detecting light reflected by the object.

17 . The lidar device according to claim 16 , further comprising:
an image recognition system generating a three-dimensional image based on an arrangement relationship of the light source and the light detector.

18 . A vehicle, comprising:
the lidar device according to claim 16 .

19 . A vehicle, comprising:
the lidar device according to claim 16 at each of four corners of a vehicle body.

Assignees

• Toshiba Kk

Inventors

• Fujiwara Ikuo
• Kwon Honam
• Sasaki Keita
• Suzuki Kazuhiro
• Atsuta Masaki
• Shimizu Mariko
• Okamoto Kazuaki

Classifications

• H10F77/14 Primary

  Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/803

  Pixels having integrated switching, control, storage or amplification elements · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title