Composition for forming block copolymer layer for formation of microphase-separated pattern

Patent metadata

Field	Value
Publication number	US-2021284782-A1
Application number	US-201917258227-A
Country	US
Kind code	A1
Filing date	Jul 16, 2019
Priority date	Jul 17, 2018
Publication date	Sep 16, 2021
Grant date	—

Abstract

A self-assembled film forming composition for forming a phase-separated structure of a block copolymer layer on a substrate, containing a block copolymer and a solvent, and is configured such that: the block copolymer is obtained by bonding a silicon-free polymer to a silicon-containing polymer that contains, as a constituent unit, styrene that is substituted by a silicon-containing group; the silicon-free polymer contains a structure derived from formula [1-1] or formula [1-2]; and the silicon-containing group contains one silicon atom. [In formula [1-1] or formula [1-2], each of R1 and R2 independently represents a hydrogen atom, a halogen atom or an alkyl group having 1-10 carbon atoms; and each of R3-R5 independently represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having 1-10 carbon atoms, an alkoxy group having 1-10 carbon atoms, a cyano group, an amino group, an amide group or a carbonyl group.]

First claim

1 . A self-assembly film-forming composition comprising a block copolymer and a solvent, wherein the composition is for forming a phase-separated structure by a block copolymer layer on a substrate,
the block copolymer comprises a silicon-free polymer and a silicon-containing polymer bonded together, the silicon-containing polymer comprising a structural unit from styrene substituted with a silicon-containing group, and the silicon-free polymer comprises a unit structure represented by formula (1-1) or formula (1-2) below, and the silicon-containing group contains one silicon atom,

(in formula (1-1) and formula (1-2), R 1 and R 2 are each independently a hydrogen atom, a halogen atom or a C1-C10 alkyl group; and R 3 to R 5 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a C1-C10 alkyl group, a C1-C10 alkoxy group, a cyano group, an amino group, an amide group or a carbonyl group).

2 . A self-assembly film-forming composition comprising a block copolymer and a solvent, wherein the composition is for forming a phase-separated structure by a block copolymer layer on a substrate,
the block copolymer comprises a silicon-free polymer and a silicon-containing polymer bonded together, the silicon-containing polymer comprising a structural unit from styrene substituted with a silicon-containing group, the silicon-free polymer comprises a unit structure represented by formula (1-1) or formula (1-2) below:

(in formula (1-1) and formula (1-2), R 1 and R 2 are each independently a hydrogen atom, a halogen atom or a C1-C10 alkyl group; and R 3 to R 5 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a C1-C10 alkyl group, a C1-C10 alkoxy group, a cyano group, an amino group, an amide group or a carbonyl group), and
the block copolymer layer is to be applied onto an underlayer film comprising a copolymer comprising the following unit structures:
unit structure (A) derived from a styrene compound containing a tert-butyl group,

unit structure (B) derived from an aromatic-containing vinyl compound containing no hydroxy group with the proviso that it is different from unit structure (A), and
unit structure (C) derived from a compound containing a (meth)acryloyl group and no hydroxy group.

3 . The self-assembly film-forming composition according to claim 1 , wherein the silicon-containing polymer comprises a unit structure represented by the following formula (2):

(in formula (2), R 6 to R 8 are each independently a C1-C10 alkyl group or a C6-C40 aryl group).

4 . The self-assembly film-forming composition according to claim 1 , wherein the block copolymer layer is to be overcoated with:
an upper layer film comprising a copolymer (A) comprising unit structures (a) derived from a maleimide structure and from a styrene structure.

5 . A method for producing a phase-separated pattern by a block copolymer, comprising the steps of:
(1) forming a block copolymer layer on a substrate using the self-assembly film-forming composition according to claim 1 , and (2) separating the block copolymer layer formed on the substrate into phases.

6 . The method according to claim 5 for producing a phase-separated pattern by a block copolymer, further comprising the step of forming an underlayer film on the substrate prior to step (1).

7 . The method according to claim 5 for producing a phase-separated pattern by a block copolymer, further comprising the step of forming an upper layer film on the block copolymer layer between step (1) and step (2).

8 . A process for manufacturing a semiconductor device, comprising the steps of:
(1) forming a block copolymer layer on a substrate using the self-assembly film-forming composition according to claim 1 , (2) separating the block copolymer layer formed on the substrate into phases, (3) etching the block copolymer layer separated into phases, and (4) etching the substrate.

9 . A laminate comprising, sequentially on a substrate:
(1) an underlayer film on the substrate, (2) a block copolymer layer comprising a block copolymer comprising a silicon-free polymer and a silicon-containing polymer bonded together, the silicon-containing polymer comprising a structural unit from styrene substituted with a silicon-containing group, wherein the silicon-free polymer comprises a unit structure represented by formula (1-1) or formula (1-2) below, and the silicon-containing group contains one silicon atom,

(in formula (1-1) and formula (1-2), R 1 and R 2 are each independently a hydrogen atom, a halogen atom or a C1-C10 alkyl group; and R 3 to R 5 are each independently a hydrogen atom, a hydroxy group, a halogen atom, a C1-C10 alkyl group, a C1-C10 alkoxy group, a cyano group, an amino group, an amide group or a carbonyl group), and
(3) an upper layer film.

Assignees

• Nissan Chemical Corp

Inventors

• Mizuochi Ryuta
• Someya Yasunobu
• Wakayama Hiroyuki
• Kozawa Masami
• Tadokoro Shinsuke

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• C08F297/02

  using a catalyst of the anionic type · CPC title