Gas sensor device, gas measuring device, and method of manufacturing gas sensor device

US2021278357A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2021278357-A1
Application numberUS-202117327825-A
CountryUS
Kind codeA1
Filing dateMay 24, 2021
Priority dateApr 28, 2017
Publication dateSep 9, 2021
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of manufacturing a gas sensor device, the method comprising: forming a first electrode and a second electrode on a substrate; and forming a polythiophene film on the substrate between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed. 2 . The method of manufacturing a gas sensor device according to claim 1 , wherein the forming a polythiophene film absorbed cuprous bromide is performed by contacting the polythiophene film and a cupric bromide.

Assignees

Inventors

Classifications

  • G01N27/125Primary

    Composition of the body, e.g. the composition of its sensitive layer · CPC title

  • involving inorganic compounds or pH · CPC title

  • of gaseous biological material, e.g. breath · CPC title

  • Physics · mapped topic

  • other than oxygen, carbon dioxide or alcohol, e.g. organic vapours · CPC title

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Frequently asked questions

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What does patent US2021278357A1 cover?
A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.
Who is the assignee on this patent?
Fujitsu Ltd
What technology area does this patent fall under?
Primary CPC classification G01N27/125. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Sep 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).