Laser diode chip, package, transmission apparatus, ranging apparatus, and electronic device

Patent metadata

Field	Value
Publication number	US-2021257815-A1
Application number	US-202117246370-A
Country	US
Kind code	A1
Filing date	Apr 30, 2021
Priority date	Oct 31, 2018
Publication date	Aug 19, 2021
Grant date	—

Abstract

A laser diode chip includes a substrate including a first surface and a second surface, and a laser diode array including at least two laser diodes formed at the substrate. Each of the at least two laser diodes includes a P electrode formed at the first surface of the substrate, an N electrode formed at the second surface of the substrate, and a light emitting region formed between the P electrode and N electrode. Adjacent N electrodes of adjacent laser diodes of the at least two laser diodes are isolated from each other.

First claim

What is claimed is:

1 . A laser diode chip comprising:
a substrate including a first surface and a second surface; and a laser diode array including at least two laser diodes formed at the substrate and each including:
a P electrode formed at the first surface of the substrate;
an N electrode formed at the second surface of the substrate; and
a light emitting region formed between the P electrode and N electrode;
wherein adjacent N electrodes of adjacent laser diodes of the at least two laser diodes are isolated from each other.

2 . The laser diode chip according to claim 1 , further comprising:
an isolation channel between the adjacent N electrodes.

3 . The laser diode chip according to claim 2 , wherein:
the isolation channel includes a groove formed between the adjacent N electrodes by etching or cutting.

4 . The laser diode chip according to claim 3 , wherein:
the groove is filled with an insulation material.

5 . The laser diode chip according to claim 2 , wherein:
a size of the isolation channel along a thickness direction of the substrate is larger than or equal to a size of one of the adjacent N electrodes along the thickness direction of the substrate, and is smaller than a thickness of the substrate.

6 . The laser diode chip according to claim 2 , wherein:
the N electrodes of the at least two laser diodes are formed by cutting a common N electrode formed at the second surface of the substrate.

7 . The laser diode chip according to claim 6 , wherein a size of the N electrode along a length direction the substrate is larger than a size of the P electrode along a length direction the substrate.

8 . The laser diode chip according to claim 1 , wherein the P electrodes of the adjacent laser diodes are isolated by an intrinsic region or a lightly doped region at the first surface of the substrate.

9 . The laser diode chip according to claim 1 , wherein:
the substrate includes an intrinsic semiconductor substrate or an N-type semiconductor substrate.

10 . The laser diode chip according to claim 1 , wherein:
the adjacent N electrodes are isolated by an intrinsic region or a lightly doped region at the first surface of the substrate.

11 . The laser diode chip according to claim 10 , wherein:
the at least two laser diodes share a P electrode formed at the first surface of the substrate.

12 . The laser diode chip according to claim 10 , wherein:
the substrate includes an intrinsic semiconductor substrate or a P-type semiconductor substrate.

13 . A laser diode package comprising:
a base plate including a surface; a cover disposed at the surface of the base plate, an accommodation space being formed between the cover and the base plate; and a laser diode chip arranged in the accommodation space and including:
a substrate including a first surface and a second surface; and
a laser diode array including at least two laser diodes formed at the substrate and each including:
a P electrode formed at the first surface of the substrate;
an N electrode formed at the second surface of the substrate; and
a light emitting region formed between the P electrode and N electrode;

wherein adjacent N electrodes of adjacent laser diodes of the at least two laser diodes are isolated from each other.

14 . The laser diode package according to claim 13 , wherein the first surface of the substrate faces the surface of the base plate.

15 . The laser diode package according to claim 13 , further comprising:
a transition plate between the substrate and the base plate.

16 . The laser diode package according to claim 13 , wherein:
the base plate includes a printed circuit board (PCB) base plate or a ceramic base plate.

17 . The laser diode package according to claim 13 , wherein a distance between the adjacent laser diodes satisfies a preset distance.

18 . The laser diode package according to claim 13 , wherein:
at least some of the at least two laser diodes are configured to emit laser pulse sequences at different times.

19 . A laser transmission apparatus comprising:
the laser diode package of claim 13 ; and a circuit board; wherein the base plate is attached to the circuit board and electrically couples the laser diode chip to the circuit board.

20 . A ranging apparatus comprising:
a circuit board; a base plate attached to the circuit board and including a surface; a cover disposed at the surface of the base plate, an accommodation space being formed between the cover and the base plate; a laser diode chip arranged in the accommodation space and electrically coupled to the circuit board via the base plate, the laser diode chip including:
a substrate including a first surface and a second surface; and
a laser diode array including at least two laser diodes formed at the substrate and each including:
a P electrode formed at the first surface of the substrate;
an N electrode formed at the second surface of the substrate; and
a light emitting region formed between the P electrode and N electrode;

wherein adjacent N electrodes of adjacent laser diodes of the at least two laser diodes are isolated from each other;
at least two photoelectric converters corresponding to the at least two laser diodes in a one-to-one correspondence, each of the at least two photoelectric converters being configured to:
receive at least part of a light beam emitted by a corresponding one of the at least two laser diodes and reflected by an object, and
convert the at least part of the light beam to an electric signal; and
a data processor configured to determine a distance between the object and the ranging apparatus based on the electric signal.

Assignees

• Sz Dji Technology Co Ltd

Inventors

• Liu Xiang
• Dong Shuai
• Hong Xiaoping

Classifications

• G01S7/4815

  using multiple transmitters · CPC title

• G01S17/894

  Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar · CPC title

• G01S7/484

  Transmitters · CPC title

• G01S17/10

  using transmission of interrupted, pulse-modulated waves (determination of distance by phase measurements G01S17/32) · CPC title

• H01S5/0234

  Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings · CPC title