Tungsten hexafluoride manufacturing method, tungsten hexafluoride purification method, and tungsten hexafluoride
US-2022348477-A1 · Nov 3, 2022 · US
Method for Producing Tungsten Hexafluoride
US2021253442A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021253442-A1 |
| Application number | US-201917268848-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 12, 2019 |
| Priority date | Aug 17, 2018 |
| Publication date | Aug 19, 2021 |
| Grant date | — |
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Abstract
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A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride.
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1 .- 6 . (canceled) 7 . A production method of tungsten hexafluoride, comprising: a first step of bringing tungsten having an oxide film into contact with a hydrogen fluoride-containing gasin a reactor, thereby removing the oxide film from the tungsten, wherein the hydrogen fluoride-containing gas is either a fluorine gas containing 50 vol ppm to 50 vol % of hydrogen fluoride or an inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride; and a second step of bringing the tungsten from which the oxide film has been removed by the first step into contact with a fluorine-containing gas to form tungsten hexafluoride. 8 . The production method of tungsten hexafluoride according to claim 7 , wherein, in the first step, the tungsten having the oxide film is brought into contact with the hydrogen fluoride-containing gas at a temperature ranging from 25° C. to 200° C. 9 . The production method of tungsten hexafluoride according to claim 7 , wherein the fluorine-containing gas used in the second step is a fluorine gas, a nitrogen trifluoride gas or a mixed gas thereof. 10 . The production method of tungsten hexafluoride according to claim 7 , wherein, in the second step, the tungsten from which the oxide film has been removed is brought into contact with the fluorine-containing gas at a temperature ranging from 25° C. to 200° C. 11 . An oxide film removing method for tungsten, comprising bringing tungsten having an oxide film into contact with a hydrogen fluoride-containing gas, wherein the hydrogen fluoride-containing gas is either a fluorine gas containing 50 vol ppm to 50 vol % of hydrogen fluoride or an inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride. 12 . The oxide film removing method for tungsten according to claim 11 , wherein the tungsten having the oxide film is brought into contact with the hydrogen fluoride-containing gas at a temperature ranging from 25° C. to 200° C. 13 . The production method of tungsten hexafluoride according to claim 8 , wherein, in the first step, the tungsten having the oxide film is brought into contact with the hydrogen fluoride-containing gas at a temperature ranging from 40° C. to 150° C. 14 . The production method of tungsten hexafluoride according to claim 7 , wherein the concentration of the hydrogen fluoride in the hydrogen fluoride-containing gas is 100 vol ppm to 1 vol %. 15 . The production method of tungsten hexafluoride according to claim 10 , wherein, in the second step, the tungsten from which the oxide film has been removed is brought into contact with the fluorine-containing gas at a temperature ranging from 40° C. to 150° C. 16 . The oxide film removing method for tungsten according to claim 12 , wherein the tungsten having the oxide film is brought into contact with the hydrogen fluoride-containing gas at a temperature ranging from 40° C. to 150° C. 17 . The oxide film removing method for tungsten according to claim 11 , wherein the concentration of the hydrogen fluoride in the hydrogen fluoride-containing gas is 100 vol ppm to 1 vol %.
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- What does patent US2021253442A1 cover?
- A production method of tungsten hexafluoride according to one embodiment of the present invention includes: a first step of bringing tungsten having an oxide film into contact with a fluorine gas or inert gas containing 50 vol ppm to 50 vol % of hydrogen fluoride in a reactor, thereby removing the oxide film from the tungsten; and a second step of bringing the tungsten from which the oxide film…
- Who is the assignee on this patent?
- Central Glass Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C01G41/04. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Aug 19 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).