Semiconductor storage device

Patent metadata

Field	Value
Publication number	US-2021249434-A1
Application number	US-202016944552-A
Country	US
Kind code	A1
Filing date	Jul 31, 2020
Priority date	Feb 7, 2020
Publication date	Aug 12, 2021
Grant date	—

Abstract

A semiconductor storage device in an embodiment includes a stacked body including a plurality of conductive layers stacked with an insulating layer interposed therebetween, end portions of the plurality of conductive layers being arranged like stairs in a stair portion, a plurality of memory cells each disposed in a crossing portion of at least a part of the plurality of conductive layers and a pillar extending in a stacking direction of the plurality of conductive layers in the stacked body, a first structure having a longitudinal direction in a first direction crossing the stacking direction and dividing the stacked body, and a second structure disposed in the stair portion, extending in a second direction toward the first structure, extending in the stacking direction in the stacked body, and having a width wider at a first portion farther from the first structure than at a second portion closer to the first structure.

First claim

What is claimed is:

1 . A semiconductor storage device comprising:
a stacked body including a plurality of conductive layers stacked with an insulating layer interposed therebetween, end portions of the plurality of conductive layers being arranged like stairs in a stair portion; a pillar extending in a stacking direction of the plurality of conductive layers in the stacked body; a plurality of memory cells each disposed in a crossing portion of at least a part of the plurality of conductive layers and the pillar; a first structure that has a longitudinal direction in a first direction crossing the stacking direction and divides the stacked body; and a second structure that is disposed in the stair portion, extends in a second direction toward the first structure from a position apart from a side surface of the first structure and extends in the stacking direction in the stacked body, wherein a width of the second structure is wider at a first portion farther from the first structure than at a second portion closer to the first structure, and the second portion has a longitudinal direction in the second direction in top view.

2 . The semiconductor storage device according to claim 1 , wherein
the second portion is in contact with or close to the side surface of the first structure.

3 . The semiconductor storage device according to claim 1 , wherein
the first portion includes a curved surface from a first part, through a second part, to a third part, the first part being closer to the second portion, and having a width substantially equal to a width of the second portion, the second part having the largest width in the first portion, the first portion terminating at the third part opposite to the second portion.

4 . The semiconductor storage device according to claim 3 , wherein
the first portion has a substantially circular shape in which the first part is opened toward the second portion in top view.

5 . The semiconductor storage device according to claim 3 , wherein
the first portion has a shape of a tear drop in which the curved surface from the first part to the second part is gentler than the curved surface from the second part to the third part and the first part is opened toward the second portion in top view.

6 . The semiconductor storage device according to claim 1 , wherein
the second structure includes, as the second portion, a beam portion extending toward the first structure, and, as the first portion, a columnar portion coupled to the beam portion.

7 . The semiconductor storage device according to claim 6 , wherein
an angle at a coupling portion of the beam portion and the columnar portion is obtuse.

8 . The semiconductor storage device according to claim 7 , wherein
the columnar portion has, in top view, a substantially circular shape coupled to the beam portion or a shape of a tear drop gradually narrowed toward the beam portion and coupled to the beam portion.

9 . The semiconductor storage device according to claim 8 , wherein,
the columnar portion has the shape of the tear drop, the angle at the coupling portion being larger than the columnar portion of the circular shape.

10 . The semiconductor storage device according to claim 1 , wherein
the second structure includes, as the second portion, a first beam portion extending in the second direction, a second beam portion that is a third portion closer to the first structure, extends in the second direction in a position apart from the first beam portion, extends in the stacking direction in the stacked body, and has a width substantially equal to the first beam portion, and, as the first portion, a columnar portion coupled to the first beam portion and the second beam portion.

11 . The semiconductor storage device according to claim 10 , wherein
the columnar portion has in top view, an elliptical shape or an oval shape coupled to the first beam portion and the second beam portion, the elliptical shape or the oval shape having a major axis along a direction crossing the second direction.

12 . The semiconductor storage device according to claim 1 , wherein
the second structure includes a plurality of unit structures disposed in positions opposed to each other with the first structure interposed therebetween.

13 . The semiconductor storage device according to claim 12 , wherein
the plurality of unit structures includes a first unit structure having a first length in the second direction, and a second unit structure having a second length longer than the first length in the second direction, and having the first portion located in a position farther from the first structure than the first portion of the first unit structure.

14 . The semiconductor storage device according to claim 13 , wherein
the first unit structure includes a plurality of first unit structures, the second unit structure includes a plurality of second unit structures, one first unit structure of the plurality of first unit structures is disposed in a position opposed to another first unit structure of the plurality of first unit structures with the first structure interposed therebetween, and one second unit structure of the plurality of second unit structures is disposed in a position opposed to another second unit structure of the plurality of second unit structures with the first structure interposed therebetween.

15 . The semiconductor storage device according to claim 13 , wherein
the second unit structure is disposed in a position opposed to the first unit structure with the first structure interposed therebetween.

16 . The semiconductor storage device according to claim 1 ,
wherein, the second structure includes the first portion farther from the first structure and two second portions closer to the first structure, the two second portions being coupled to the first portion at positions disposed in a direction crossing the second direction.

17 . The semiconductor storage device according to claim 1 , wherein
a width of an upper surface of the first portion is larger than a width of a portion of the second portion where the second portion is widest in the stacking direction.

18 . The semiconductor storage device according to claim 17 , wherein
a width of a bottom surface of the first portion is larger than the width of the portion of the second portion where the second portion is widest in the stacking direction.

19 . The semiconductor storage device according to claim 17 , wherein
a width of a portion of the first portion where the first portion is narrowest in the stacking direction is larger than the width of the portion of the second portion where the second portion is widest in the stacking direction.

20 . The semiconductor storage device according to claim 19 , wherein,
in a cross section in a width direction of the second structure, the first portion and the second portion each have a bowing shape bulged between an upper surface and a bottom surface.

Assignees

• Kioxia Corp

Inventors

• Nishikawa Takuya

Classifications

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H01L27/1157

  Electricity · mapped topic

• H01L23/5226

  Electricity · mapped topic

• H01L23/5283

  Electricity · mapped topic