Process for producing and using a w-ni sputtering target

Patent metadata

Field	Value
Publication number	US-2021246544-A1
Application number	US-202117235003-A
Country	US
Kind code	A1
Filing date	Apr 20, 2021
Priority date	Dec 20, 2013
Publication date	Aug 12, 2021
Grant date	—

Abstract

A process for producing a W—Ni sputtering target includes providing the sputtering target with 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.

First claim

1 . A process of using a sputtering target, the process comprising the following steps:
using a sputtering target having from 45 to 75% by weight of W, a balance of Ni and normal impurities, a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section, for deposition of an electrochromic layer.

2 . The process for producing a W—Ni sputtering target according to claim 1 , which further comprises producing the sputtering target by at least compacting a powder mixture of W powder and Ni powder by application of pressure, heat or pressure and heat to provide a resulting blank, and cooling the resulting blank at a cooling rate of greater than 30 K/min at least in a temperature range of from 900 to 750° C.

3 . A process of using of a sputtering target, the process comprising the following steps:
using a sputtering target having from 45 to 75% by weight of W, a balance of Ni and normal impurities, a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section, for deposition of solar absorber layers, protective layers against high-temperature oxidation or diffusion barrier layers.

4 . The process for producing a W—Ni sputtering target according to claim 3 , which further comprises producing the sputtering target by at least compacting a powder mixture of W powder and Ni powder by application of pressure, heat or pressure and heat to provide a resulting blank, and cooling the resulting blank at a cooling rate of greater than 30 K/min at least in a temperature range of from 900 to 750° C.

5 . A process for producing a W—Ni sputtering target using a powder-metallurgical route, the method comprising the following steps:
carrying out a compacting step in which a powder mixture of W powder and Ni powder is compacted by application of pressure, heat or pressure and heat to give a resulting blank; and
carrying out a cooling step in which the resulting blank is cooled at a cooling rate of greater than 30 K/min at least in a temperature range of from 900 to 750° C.

6 . The process for producing a W—Ni sputtering target according to claim 5 , which further comprises effecting the compacting step by sintering at temperatures of from 1100 to 1450° C.

7 . The process for producing a W—Ni sputtering target according to claim 5 , which further comprises performing a thermomechanical or thermal treatment of the blank between the compacting step and the cooling step.

8 . The process for producing a W—Ni sputtering target according to claim 7 , which further comprises performing the thermomechanical or thermal treatment at temperatures in a range of from 970 to 1450° C.

9 . The process for producing a W—Ni sputtering target according to claim 7 , wherein the thermomechanical or thermal treatment includes at least one forging step.

Assignees

• Plansee Se

Inventors

• Linke Christian
• Scherer Thomas

Classifications

• H01J37/3429

  Plural materials · CPC title

• B22F2998/10

  Processes characterised by the sequence of their steps · CPC title

• B22F3/1028

  Controlled cooling · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C22C19/03

  based on nickel · CPC title