Photodiode, method for preparing the same, and electronic device

Patent metadata

Field	Value
Publication number	US-2021217909-A1
Application number	US-202016958120-A
Country	US
Kind code	A1
Filing date	Jan 17, 2020
Priority date	Feb 2, 2019
Publication date	Jul 15, 2021
Grant date	—

Abstract

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

First claim

1 . A photodiode, comprising:
a first electrode layer and a semiconductor structure that are stacked, wherein a surface of the semiconductor structure away from the first electrode layer has a first concave-convex structure; and a second electrode layer arranged on the surface of the semiconductor structure away from the first electrode layer, wherein a surface of the second electrode layer away from the first electrode layer has a second concave-convex structure.

2 . The photodiode of claim 1 , wherein the semiconductor structure comprises:
a first semiconductor layer arranged on a surface of the first electrode layer; and a second semiconductor layer arranged on a face of the first semiconductor layer away from the first electrode layer, wherein a surface of the second semiconductor layer away from the first electrode layer has the first concave-convex structure; wherein one of the first semiconductor layer and the second semiconductor layer is a P-type semiconductor layer, and the other is an N-type semiconductor layer.

3 . The photodiode of claim 2 , wherein the first semiconductor layer comprises an N-type amorphous silicon layer, the second semiconductor layer comprises a P-type amorphous silicon layer, and a surface of the P-type amorphous silicon away from the first electrode layer has the first concave-convex structure.

4 . The photodiode of claim 2 , wherein the first semiconductor layer comprises a P-type amorphous silicon layer, the second semiconductor layer comprises an N-type amorphous silicon layer, and a surface of the N-type amorphous silicon away from the first electrode layer has the first concave-convex structure.

5 . The photodiode of claim 3 , wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer arranged between the N-type amorphous silicon layer and the P-type amorphous silicon layer.

6 . The photodiode of claim 2 , wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer;
wherein the first semiconductor layer comprises a P-type amorphous silicon layer, the intrinsic amorphous silicon layer is located on a surface of the P-type amorphous silicon layer away from the first electrode layer, and a surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; wherein the second semiconductor layer comprises an N-type metal oxide semiconductor layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the N-type metal oxide semiconductor layer away from the first electrode layer has the first concave-convex structure.

7 . The photodiode of claim 2 , wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer;
wherein the first semiconductor layer comprises an N-type metal oxide semiconductor layer, and the intrinsic amorphous silicon layer is located on a surface of the N-type metal oxide semiconductor layer away from the first electrode layer; wherein the second semiconductor layer comprises a P-type amorphous silicon layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the P-type amorphous silicon layer away from the first electrode layer has the first concave-convex structure formed by crystallizing amorphous silicon in its surface.

8 . The photodiode of claim 2 , wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer;
wherein the first semiconductor layer comprises an N-type metal oxide semiconductor layer, the intrinsic amorphous silicon layer is located on a surface of the N-type metal oxide semiconductor layer away from the first electrode layer, and the surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; wherein the second semiconductor layer comprises a P-type amorphous silicon layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the P-type amorphous silicon layer away from the first electrode layer has the first concave-convex structure.

9 . The photodiode of claim 6 , wherein the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have substantially the same profile.

10 . The photodiode of claim 9 , wherein the convexes in the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have a height in a direction perpendicular to a surface of the first electrode layer in contact with the semiconductor structure in a range from 30 nm to 80 nm, a maximum width in the direction parallel to the surface of the first electrode layer in contact with the semiconductor structure in a range from 0.1 μm to 0.5 μm, and a pitch between adjacent convexes in a range from 0.1 μm to 0.4 μm.

11 . The photodiode of claim 1 , wherein the second electrode layer is a transparent electrode layer.

12 . An electronic device comprising the photodiode of claim 1 .

13 . A method for preparing a photodiode, comprising:
preparing a first electrode layer; preparing a semiconductor structure on a surface of the first electrode layer, wherein a first concave-convex structure is formed in a surface of the semiconductor structure away from the first electrode layer; and depositing a second electrode layer on the surface of the semiconductor structure away from the first electrode layer, wherein a second concave-convex structure is formed on the surface of the second electrode layer away from the first electrode layer.

14 . The method of claim 13 , wherein the preparing the semiconductor structure on the surface of the first electrode layer comprises:
preparing a first semiconductor layer on a surface of the first electrode layer; and preparing a second semiconductor layer on a surface of the first semiconductor layer away from the first electrode layer, and forming the first concave-convex structure in the surface of the second semiconductor layer away from the first electrode layer; wherein one of the first semiconductor layer and the second semiconductor layer is a P-type semiconductor layer, and the other is an N-type semiconductor layer.

15 . The method of claim 14 , wherein the method comprises irradiating a surface of the second semiconductor layer away from the first electrode layer by a laser, so that the surface of the second semiconductor layer away from the first electrode layer is crystallized to form the first concave-convex structure.

16 . The method of claim 15 , wherein the method further comprises preparing an intrinsic amorphous silicon layer located between the N-type amorphous silicon layer and the P-type amorphous silicon layer.

17 . The method of claim 14 , wherein the preparing the first semiconductor layer and the second semiconductor layer comprises:
preparing a P-type amorphous silicon layer on a surface of the first electrode layer; preparing an intrinsic amorphous silicon layer on a surface of the P-type amorphous silicon layer away from the first electrode layer, and irradiating the surface of the intrinsic amorphous silicon layer away from the first electrode layer by a laser, so that the surface of the intrinsic amorphous silicon layer away from the first electrode layer is crystallized to form a third concave-convex structure; and depositi

Assignees

• Boe Technology Group Co Ltd

Inventors

• Du Jianhua
• Li Chao
• Qiang Zhaohui
• Gao Yupeng
• Guan Feng
• Huang Rui
• Wang Zhi
• Lv Yang
• Luo Chao

Classifications

• H10F77/1662

  including only Group IV materials · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10F71/103

  including only Group IV materials · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title