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US-11866805-B2 · Jan 9, 2024 · US
Transparent conductive film, substrate provided with transparent conductive film, and method for producing substrate provided with transparent conductive film
US2021193950A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021193950-A1 |
| Application number | US-201616065184-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 12, 2016 |
| Priority date | Dec 24, 2015 |
| Publication date | Jun 24, 2021 |
| Grant date | — |
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Abstract
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Provided is a transparent conductive film formed of an indium tin oxide film, which has a value of (carrier mobility)/(carrier concentration) of 2×10−20 cm5/V/S or more and a value of (carrier mobility)×(carrier concentration) of 200×1020 cm−1/V/S or more.
First claim
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1 . A transparent conductive film formed of an indium tin oxide film, which has a value of (carrier mobility)/(carrier concentration) of 2×10 −20 cm 5 /V/S or more and a value of (carrier mobility)×(carrier concentration) of 200×10 20 cm −1 /V/S or more. 2 . The transparent conductive film according to claim 1 , wherein the transparent conductive film has a value of (carrier mobility)/(carrier concentration) of 3.6×10 −20 cm 5 /V/S or more. 3 . A substrate with a transparent conductive film, comprising, on a substrate, a light scattering layer and a transparent conductive film formed of an indium tin oxide film, wherein, when a carrier mobility of the transparent conductive film is defined as μ (cm 2 /V/S) and a carrier concentration of the transparent conductive film is defined as n (cm −3 ), the transparent conductive film has a value of μ/n of 2×10 −20 cm 5 /V/S or more and a value of μ×n of 200×10 20 cm −1 /V/S or more. 4 . A method of producing a substrate with a transparent conductive film, the substrate with a transparent conductive film comprising a transparent conductive film formed of an indium tin oxide film on a substrate, the method comprising arranging the substrate in a chamber including an indium tin oxide target, and performing sputtering under a state in which an oxygen concentration in the chamber is set to from 0.5% to 0.9%.
Assignees
Inventors
Classifications
- C23C14/0036Primary
Reactive sputtering · CPC title
Anodes · CPC title
Anodes · CPC title
- C23C14/086Primary
of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title
Sputtering · CPC title
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- What does patent US2021193950A1 cover?
- Provided is a transparent conductive film formed of an indium tin oxide film, which has a value of (carrier mobility)/(carrier concentration) of 2×10−20 cm5/V/S or more and a value of (carrier mobility)×(carrier concentration) of 200×1020 cm−1/V/S or more.
- Who is the assignee on this patent?
- Nippon Electric Glass Co, Oled Mat Solutions Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C23C14/0036. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jun 24 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).