Organic thin film transistor and method of manufacturing organic thin film transistor

Patent metadata

Field	Value
Publication number	US-2021184142-A1
Application number	US-202117186275-A
Country	US
Kind code	A1
Filing date	Feb 26, 2021
Priority date	Sep 3, 2018
Publication date	Jun 17, 2021
Grant date	—

Abstract

Provided are an organic thin film transistor that has high bendability and can suppress a decrease in carrier mobility caused by a pinhole of an insulating film or leveling properties and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gate electrode; an insulating film that is formed to cover the gate electrode; an organic semiconductor layer that is formed on the insulating film, and a source electrode and a drain electrode that are formed on the organic semiconductor layer, in which the insulating film includes an inorganic film consisting of SiNH.

First claim

What is claimed is:

1 . An organic thin film transistor comprising:
a gate electrode; an insulating film that is formed to cover the gate electrode; an organic semiconductor layer that is formed on the insulating film; and a source electrode and a drain electrode that are formed on the organic semiconductor layer, wherein the insulating film includes an inorganic film consisting of SiNH.

2 . The organic thin film transistor according to claim 1 ,
wherein a ratio SiN:H of the number of SiN atoms to the number of H atoms in the inorganic film is 1:0.7 to 2.

3 . The organic thin film transistor according to claim 1 ,
wherein a thickness of the inorganic film is 1 nm to 100 nm.

4 . The organic thin film transistor according to claim 1 ,
wherein an organic layer is provided on the gate electrode side of the inorganic film.

5 . The organic thin film transistor according to claim 4 ,
wherein a thickness of the organic layer is 0.01 μm to 1 μm.

6 . The organic thin film transistor according to claim 4 ,
wherein a glass transition temperature of the organic layer is 200° C. or higher.

7 . The organic thin film transistor according to claim 1 ,
wherein a second inorganic film consisting of SiO 2 is provided on a surface on the organic semiconductor layer side of the inorganic film.

8 . The organic thin film transistor according to claim 1 ,
wherein a support that supports the gate electrode, the insulating film, the organic semiconductor layer, the source electrode, and the drain electrode is provided.

9 . A method of manufacturing the organic thin film transistor according to claim 1 , the method comprising:
a gate electrode forming step of forming a gate electrode on a support; an insulating film laminating step of laminating an insulating film on the gate electrode; an organic semiconductor layer forming step of forming an organic semiconductor layer on the insulating film; and a source-drain electrode forming step of forming a source electrode and a drain electrode on the organic semiconductor layer, wherein the insulating film includes an inorganic layer consisting of SiNH.

10 . The method of manufacturing the organic thin film transistor according to claim 9 ,
wherein in the insulating film laminating step, a transfer type laminated film including a substrate and a transfer layer that includes the inorganic layer formed on the substrate is laminated on the gate electrode and subsequently the substrate is peeled off from the transfer layer such that the insulating film is laminated on the gate electrode.

11 . The organic thin film transistor according to claim 2 ,
wherein a thickness of the inorganic film is 1 nm to 100 nm.

12 . The organic thin film transistor according to claim 2 ,
wherein an organic layer is provided on the gate electrode side of the inorganic film.

13 . The organic thin film transistor according to claim 12 ,
wherein a thickness of the organic layer is 0.01 μm to 1 μm.

14 . The organic thin film transistor according to claim 12 ,
wherein a glass transition temperature of the organic layer is 200° C. or higher.

15 . The organic thin film transistor according to claim 2 ,
wherein a second inorganic film consisting of SiO 2 is provided on a surface on the organic semiconductor layer side of the inorganic film.

16 . The organic thin film transistor according to claim 2 ,
wherein a support that supports the gate electrode, the insulating film, the organic semiconductor layer, the source electrode, and the drain electrode is provided.

17 . A method of manufacturing the organic thin film transistor according to claim 2 , the method comprising:
a gate electrode forming step of forming a gate electrode on a support; an insulating film laminating step of laminating an insulating film on the gate electrode; an organic semiconductor layer forming step of forming an organic semiconductor layer on the insulating film; and a source-drain electrode forming step of forming a source electrode and a drain electrode on the organic semiconductor layer, wherein the insulating film includes an inorganic layer consisting of SiNH.

18 . The method of manufacturing the organic thin film transistor according to claim 17 ,
wherein in the insulating film laminating step, a transfer type laminated film including a substrate and a transfer layer that includes the inorganic layer formed on the substrate is laminated on the gate electrode and subsequently the substrate is peeled off from the transfer layer such that the insulating film is laminated on the gate electrode.

19 . The organic thin film transistor according to claim 3 ,
wherein an organic layer is provided on the gate electrode side of the inorganic film.

20 . The organic thin film transistor according to claim 19 ,
wherein a thickness of the organic layer is 0.01 μm to 1 μm.

Assignees

• Fujifilm Corp

Inventors

• Iwase Eijiro
• Tonohara Koji
• Sugiura Hiroki

Classifications

• H01L51/0529

  Electricity · mapped topic

• H01L51/0525 Primary

  Electricity · mapped topic

• H01L51/0003

  Electricity · mapped topic

• H10K10/472 Primary

  the gate dielectric comprising only inorganic materials · CPC title

• H10K71/18

  using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet · CPC title