Film forming material for lithography, composition for film formation for lithography, underlayer film for lithography, and method for forming pattern

Patent metadata

Field	Value
Publication number	US-2021165327-A1
Application number	US-201917268038-A
Country	US
Kind code	A1
Filing date	Aug 8, 2019
Priority date	Aug 20, 2018
Publication date	Jun 3, 2021
Grant date	—

Abstract

An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. The problem described above can be solved by the following film forming material for lithography. A film forming material for lithography comprising:a compound having a group of formula (0A):(In formula (0A),RA is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; andRB is an alkyl group having 1 to 4 carbon atoms.); anda compound having a group of formula (0B):

First claim

1 . A film forming material for lithography comprising:
a compound having a group of formula (0A):

wherein
R A is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and
R B is an alkyl group having 1 to 4 carbon atoms;

and
a compound having a group of formula (0B):

2 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) has two or more groups of formula (0A).

3 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) has two or more groups of formula (0B).

4 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) is a compound having two groups of formula (0A) or an addition polymerization resin of a compound having a group of formula (0A).

5 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) is a compound having two groups of formula (0B) or an addition polymerization resin of a compound having a group of formula (0B).

6 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) is represented by formula (1A 0 ):

wherein
R A and R B are as defined above; and
Z is a divalent hydrocarbon group having 1 to 100 carbon atoms and optionally containing a heteroatom.

7 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) is represented by formula (1A):

wherein
R A and R B are as defined above;
each X is independently a single bond, —O—, —CH 2 —, —C(CH 3 ) 2 —, —CO—, —C(CF 3 ) 2 —, —CONH—, or —COO—;
A is a single bond, an oxygen atom, or a divalent hydrocarbon group having 1 to 80 carbon atoms and optionally containing a heteroatom;
each R 1 is independently a group having 0 to 30 carbon atoms and optionally containing a heteroatom; and
each m1 is independently an integer of 0 to 4.

8 . The film forming material for lithography according to claim 7 , wherein:
A is a single bond, an oxygen atom, —(CH 2 ) p —, —CH 2 C(CH 3 ) 2 CH 2 —, —(C(CH 3 ) 2 ) p —, —(O(CH 2 ) q ) p —, —(O(C 6 H 4 )) p —, or any of the following structures:

Y is a single bond, —O—, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —,

p is an integer of 0 to 20; and
q is an integer of 0 to 4.

9 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) is represented by formula (2A):

wherein
R A and R B are as defined above;
each R 2 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m2 is independently an integer of 0 to 3;
each m2′ is independently an integer of 0 to 4; and
n is an integer of 0 to 4.

10 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0A) is represented by formula (3A):

wherein
R A and R B are as defined above;
R 3 and R 4 are each independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m3 is independently an integer of 0 to 4;
each m4 is independently an integer of 0 to 4; and
n is an integer of 0 to 4.

11 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) is represented by formula (1B 0 ):

wherein
Z is a divalent hydrocarbon group having 1 to 100 carbon atoms and optionally containing a heteroatom.

12 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) is represented by formula (1B):

wherein
each X is independently a single bond, —O—, —CH 2 —, —C(CH 3 ) 2 —, —CO—, —C(CF 3 ) 2 —, —CONH—, or —COO—;
A is a single bond, an oxygen atom, or a divalent hydrocarbon group having 1 to 80 carbon atoms and optionally containing a heteroatom;
each R 1 is independently a group having 0 to 30 carbon atoms and optionally containing a heteroatom; and
each m1 is independently an integer of 0 to 4.

13 . The film forming material for lithography according to claim 12 , wherein:
A is a single bond, an oxygen atom, —(CH 2 ) p —, —CH 2 C(CH 3 ) 2 CH 2 —, —(C(CH 3 ) 2 ) p —, —(O(CH 2 ) q ) p —, —(O(C 6 H 4 )) p —, or any of the following structures:

Y is a single bond, —O—, —CH 2 —, —C(CH 3 ) 2 —, —C(CF 3 ) 2 —,

p is an integer of 0 to 20; and
each q is independently an integer of 0 to 4.

14 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) is represented by formula (2B):

wherein
each R 2 is independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m2 is independently an integer of 0 to 3;
each m2′ is independently an integer of 0 to 4; and
n is an integer of 0 to 4.

15 . The film forming material for lithography according to claim 1 , wherein the compound having a group of formula (0B) is represented by formula (3B):

wherein
R 3 and R 4 are each independently a group having 0 to 10 carbon atoms and optionally containing a heteroatom;
each m3 is independently an integer of 0 to 4;
each m4 is independently an integer of 0 to 4; and
n is an integer of 0 to 4.

16 . The film forming material for lithography according to claim 1 , further comprising a crosslinking agent.

17 . The film forming material for lithography according to claim 16 , wherein the crosslinking agent is at least one selected from the group consisting of a phenol compound, an epoxy compound, a cyanate compound, an amino compound, a benzoxazine compound, a melamine compound, a guanamine compound, a glycoluril compound, a urea compound, an isocyanate compound, and an azide compound.

18 . The film forming material for lithography according to claim 16 , wherein the crosslinking agent has at least one allyl group.

19 . The film forming mater

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• Horiuchi Junya
• Ueno Masayoshi
• Yamada Kouichi
• Makinoshima Takashi
• Echigo Masatoshi

Classifications

• H10P76/4088

  Processes for improving the resolution of the masks · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title