Image sensor
US-2024380999-A1 · Nov 14, 2024 · US
Solid-state image sensor, method for producing solid-state image sensor, and electronic apparatus
US2021160447A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021160447-A1 |
| Application number | US-202117161877-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 29, 2021 |
| Priority date | Sep 16, 2011 |
| Publication date | May 27, 2021 |
| Grant date | — |
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Abstract
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A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
First claim
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What is claimed is: 1 . A solid-state image sensor comprising: a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element; and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate. 2 . The solid-state image sensor according to claim 1 , further comprising: a wiring layer having a plurality of wirings; wherein the light enters the photoelectric conversion element from a back side of the semiconductor substrate, the back side opposite to a front side of the semiconductor substrate on which the wiring layer is provided. 3 . The solid-state image sensor according to claim 1 , wherein the embedded section of the light shielding section is formed in such a way as to surround the photoelectric conversion element and the charge retaining section. 4 . The solid-state image sensor according to claim 1 , wherein the light shielding section further has a lid section disposed in such a way as to cover at least the charge retaining section on a back side of the semiconductor substrate, the back side on which the light enters the photoelectric conversion element. 5 . The solid-state image sensor according to claim 4 , wherein in the lid section of the light shielding section, an opening is formed in a region corresponding to the photoelectric conversion element. 6 . The solid-state image sensor according to claim 1 , wherein the light shielding section further has a front-side lid section disposed in such a way as to cover at least the charge retaining section on a front side of the semiconductor substrate opposite to a side on which the light enters the photoelectric conversion element. 7 . The solid-state image sensor according to claim 6 , wherein in the front-side lid section of the light shielding section, an opening is formed in a region corresponding to the photoelectric conversion element. 8 . A method for producing a solid-state image sensor comprising: forming, on a semiconductor substrate, a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element; and forming a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate. 9 . An electronic apparatus comprising: a solid-state image sensor including a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
Assignees
Inventors
Classifications
- H04N25/76Primary
Addressed sensors, e.g. MOS or CMOS sensors · CPC title
Interconnections · CPC title
Colour image sensors · CPC title
comprising a photoconductive layer deposited on the CCD structure · CPC title
Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title
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- What does patent US2021160447A1 cover?
- A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric convers…
- Who is the assignee on this patent?
- Sony Corp
- What technology area does this patent fall under?
- Primary CPC classification H04N25/76. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu May 27 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).