Aqueous composition and cleaning method using same

Patent metadata

Field	Value
Publication number	US-2021155881-A1
Application number	US-201917047571-A
Country	US
Kind code	A1
Filing date	Apr 25, 2019
Priority date	Apr 27, 2018
Publication date	May 27, 2021
Grant date	—

Abstract

An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

First claim

1 . An aqueous composition, comprising:
(A) a fluoride ion supply source in an amount that gives a fluoride ion concentration in a range of from 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations in a range of from 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of a component comprising a C 4-13 alkylphosphonic acid, a C 4-13 alkylphosphonate ester, and/or a C 4-13 alkyl phosphate, optionally in salt form, with respect to total composition mass, wherein the composition has a pH in a range of from 2 to 6.

2 . The composition of claim 1 , wherein the fluoride ion supply source (A) comprises hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, tetramethylammonium fluoride, tetraethyl ammonium fluoride, tetrapropylammonium fluoride, tetrabutylammonium fluoride, lithium fluoride, sodium fluoride, potassium fluoride, potassium bifluoride, rubidium fluoride, cesium fluoride, beryllium fluoride, magnesium fluoride, strontium fluoride, and/or barium fluoride or a mixture thereof.

3 . The composition of claim 1 , wherein the cation supply source (B) comprises a lithium compound, a sodium compound, a potassium compound, a rubidium compound, a cesium compound, a beryllium compound, a magnesium compound, a strontium compound, a barium compound, an ammonium compound, a tetramethylammonium compound, a tetraethylammonium compound, a tetrapropylammonium compound, and/or a tetrabutylammonium compound.

4 . The composition of claim 3 ,
wherein the alkylphosphonic acid is present and comprises n-butylphosphonic acid, n-pentylphosphonic acid, n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, n-undecylphosphonic acid, n-dodecylphosphonic acid, and/or n-tridecylphosphonic acid, optionally in salt form, and/or wherein the alkylphosphonate ester is present and comprises n-butylphosphonate ester, n-pentylphosphonate ester, n-hexylphosphonate ester, n-heptylphosphonate ester, n-octylphosphonate ester, n-nonylphosphonate ester, n-decylphosphonate ester, n-undecylphosphonate ester, n-dodecylphosphonate ester, and/or n-tridecylphosphonate ester, optionally as in salt form.

5 . The composition of claim 1 , wherein the alkyl phosphate is present and comprises
n-butyl phosphate, n-pentyl phosphate, n-hexyl phosphate, n-heptyl phosphate, n-octyl phosphate, n-nonyl phosphate, n-decyl phosphate, n-undecyl phosphate, n-dodecyl phosphate, n-tridecyl phosphate, 2-ethylhexyl phosphate, and/or isodecyl phosphate, optionally in salt form.

6 . A method for cleaning an electronic device, the method comprising:
bringing the composition of claim 1 into contact with the electronic device.

7 . A method for producing an electronic device, the method comprising:
bringing the composition of claim 1 into contact with the electronic device.

8 . An etching solution, comprising the composition of claim 1 .

9 . A cleaning solution, comprising the composition of claim 1 .

10 . The composition of claim 1 , having a fluoride ion concentration in a range of from 0.25 to 20 mmol/L in terms of hydrogen fluoride.

11 . The composition of claim 1 , having a fluoride ion concentration in a range of from 0.5 to 5 mmol/L in terms of hydrogen fluoride.

12 . The composition of claim 1 , having a fluoride ion concentration in a range of from 1.0 to 2.5 mmol/L in terms of hydrogen fluoride.

13 . The composition of claim 1 , wherein the mole ratio of the cations to the fluoride ions is in a range of from 0.5 to 10.

14 . The composition of claim 1 , wherein the mole ratio of the cations to the fluoride ions is in a range of from 0.6 to 8.

15 . The composition of claim 1 , wherein the cation supply source (B) is present in a range of from 0.020 to 2.00 mass % based on the total composition mass.

16 . The composition of claim 1 , wherein the cation supply source (B) is present in a range of from 0.025 to 1.50 mass % based on the total composition mass.

17 . The composition of claim 1 , wherein the cation supply source (B) is present in a range of from 0.05 to 1.0 mass % based on the total composition mass.

18 . The composition of claim 1 , comprising isodecyl phosphate, N-dodecyl phosphonic acid, N-decylphosphonic acid, N-octylphosphonic acid, 2-ethylhexyl phosphic acid, and/or N-hexylphosphonic acid, optionally in salt form.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• HORITA Akinobu
• OIE Toshiyuki
• KIKUNAGA Takahiro
• Yamada Kenji

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C23G1/02

  with acid solutions · CPC title