Semiconductor device and electronic device

Patent metadata

Field	Value
Publication number	US-2021135010-A1
Application number	US-202017011385-A
Country	US
Kind code	A1
Filing date	Sep 3, 2020
Priority date	Oct 31, 2019
Publication date	May 6, 2021
Grant date	—

Abstract

A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a component extending in a first direction; a first conductor extending in a second direction; and a second conductor extending in the second direction, wherein the component comprises:
a third conductor extending in the first direction;
a first insulator adjacent to the third conductor;
a first semiconductor adjacent to the first insulator; and
a second insulator adjacent to the first semiconductor,
wherein in a first intersection portion where the component and the first conductor cross each other, the semiconductor device comprises, between the component and the first conductor:
a second semiconductor adjacent to the second insulator; and
a third insulator adjacent to the second semiconductor,
wherein in a second intersection portion where the component and the second conductor cross each other, the component comprises:
a fourth conductor adjacent to the second insulator; and
a fourth insulator adjacent to the fourth conductor,
wherein in the first intersection portion, the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator are provided concentrically around the third conductor, and wherein in the second intersection portion, the first insulator, the first semiconductor, the second insulator, the fourth conductor, and the fourth insulator are provided concentrically around the third conductor.

2 . The semiconductor device according to claim 1 ,
wherein the first direction is orthogonal to the second direction.

3 . The semiconductor device according to claim 1 ,
wherein the first intersection portion functions as a first transistor, and wherein the second intersection portion functions as a second transistor and a capacitor.

4 . The semiconductor device according to claim 1 ,
wherein the first semiconductor is an oxide semiconductor.

5 . The semiconductor device according to claim 4 ,
wherein the oxide semiconductor comprises at least one of indium and zinc.

6 . The semiconductor device according to claim 1 ,
wherein the second semiconductor is an oxide semiconductor.

7 . The semiconductor device according to claim 6 ,
wherein the oxide semiconductor comprises at least one of indium and zinc.

8 . The semiconductor device according to claim 1 , functioning as a NAND memory device.

9 . An electronic device comprising:
the semiconductor device according to claim 1 ; and at least one of an operation switch, a battery, and a display portion.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Kimura Hajime
• Kunitake Hitoshi

Classifications

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/693

  Vertical IGFETs having charge trapping gate insulators · CPC title

• H10D84/00

  Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers · CPC title

• H10D30/6728

  Vertical TFTs · CPC title

• H10D62/80

  characterised by the materials · CPC title