Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
Micro light-emitting diode device
US2021126171A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021126171-A1 |
| Application number | US-201916708445-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 10, 2019 |
| Priority date | Oct 28, 2019 |
| Publication date | Apr 29, 2021 |
| Grant date | — |
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- Title
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- Abstract
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- Assignees and inventors
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- Key dates
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- First independent claim
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Abstract
Official abstract text for this publication.
A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.
First claim
Opening claim text (preview).
What is claimed is: 1 . A micro light-emitting diode device, comprising: a substrate; a micro light-emitting diode, disposed on the substrate; a first protection layer, disposed on a first portion of an outer side wall of the micro light-emitting diode and having a gap from the substrate; and a second protection layer, disposed on a second portion of the outer side wall of the micro light-emitting diode, wherein the second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer, and a maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall. 2 . The micro light-emitting diode device according to claim 1 , wherein a ratio of the maximum thickness of the first protection layer on the outer side wall to the maximum thickness of the second protection layer on the outer side wall is less than or equal to 0.2. 3 . The micro light-emitting diode device according to claim 2 , wherein a thickness of the second protection layer on the substrate is gradually increased along a direction away from the first protection layer. 4 . The micro light-emitting diode device according to claim 1 , wherein an included angle between the second protection layer and the substrate is an acute angle, and an included angle between the second protection layer and the first protection layer is an acute angle. 5 . The micro light-emitting diode device according to claim 1 , wherein a material of the first protection layer is different from a material of the second protection layer. 6 . The micro light-emitting diode device according to claim 5 , wherein a Young's modulus of the first protection layer is greater than a Young's modulus of the second protection layer. 7 . The micro light-emitting diode device according to claim 1 , wherein a height of the second protection layer on the substrate is less than or equal to 0.5 time a height of the micro light-emitting diode on the substrate. 8 . The micro light-emitting diode device according to claim 1 , wherein the micro light-emitting diode comprises a light-emitting layer, and a height of the second protection layer on the substrate is less than a height of the light-emitting layer on the substrate. 9 . The micro light-emitting diode device according to claim 1 , wherein a roughness of the first portion of the outer side wall of the micro light-emitting diode is less than a roughness of the second portion. 10 . The micro light-emitting diode device according to claim 1 , wherein a height of the second protection layer on the substrate is greater than or equal to a height of the first protection layer on the substrate. 11 . The micro light-emitting diode device according to claim 1 , wherein the second protection layer is further disposed on a bottom surface of the micro light-emitting diode and between the micro light-emitting diode and the substrate. 12 . The micro light-emitting diode device according to claim 1 , wherein the second protection layer is a lightproof layer.
Assignees
Inventors
Classifications
Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title
- H10H20/84Primary
Coatings, e.g. passivation layers or antireflective coatings · CPC title
- H10H20/853Primary
characterised by their shape · CPC title
Electricity · mapped topic
- H01L33/54Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2021126171A1 cover?
- A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is…
- Who is the assignee on this patent?
- Playnitride Display Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/84. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Apr 29 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).