Optoelectric device

Patent metadata

Field	Value
Publication number	US-2021126159-A1
Application number	US-202016849296-A
Country	US
Kind code	A1
Filing date	Apr 15, 2020
Priority date	Oct 23, 2019
Publication date	Apr 29, 2021
Grant date	—

Abstract

An optoelectric device includes a quantum dot core and an intermediate provided on at least a part of a surface of the quantum dot core, thereby converting light energy incident upon the optoelectric device to electrical energy.

First claim

What is claimed is:

1 . An optoelectric device comprising:
a quantum dot core; and an intermediate provided on at least a part of a surface of the quantum dot core, wherein the optoelectric device is configured to convert light energy incident upon the optoelectric device to electrical energy.

2 . The optoelectric device of claim 1 , further comprising a matrix in which the quantum dot core and the intermediate are embedded and through which carriers are transferred, the carriers being generated by the quantum dot core from the light energy incident thereon.

3 . The optoelectric device of claim 1 , wherein a ratio of an area of the part of the surface of the quantum dot core to an entire area of the surface of the quantum dot core is in a range of 0.001-0.5.

4 . The optoelectric device of claim 1 , wherein a ratio of an area of the part of the surface of the quantum dot core to an entire area of the surface of the quantum dot core is in a range of 0.001-0.3.

5 . The optoelectric device of claim 1 , wherein the quantum dot core comprises at least one selected from the group consisting of CdSe, CdTe, InP, InAs, ZnS, ZnSe, and ZnTe.

6 . The optoelectric device of claim 1 , wherein the intermediate comprises at least one selected from the group consisting of PbS, PbSe, InP, InAs, and AlAs.

7 . The optoelectric device of claim 1 , wherein the intermediate comprises sulfur (S) or oxygen (O) to prevent oxidation of the quantum dot core.

8 . The optoelectric device of claim 2 , wherein the matrix comprises a semiconductor material.

9 . The optoelectric device of claim 2 , wherein the matrix comprises an indium gallium zinc oxide (IGZO), a silicon indium zinc oxide (SIZO), or a silicon zinc tin oxide (SZTO).

10 . The optoelectric device of claim 2 , wherein the matrix comprises a group IV semiconductor material, a group III-V semiconductor material, or a group II-VI semiconductor material.

11 . The optoelectric device of claim 10 , wherein the matrix comprises a-Si, p-Si, Ge, GaAs, GaP, GaN, ZnSe, or ZnS.

12 . The optoelectric device of claim 1 , wherein, when a majority of carriers generated by the quantum dot core comprises electrons, a conduction energy band level of the intermediate is lower than a conduction energy band level of the quantum dot core.

13 . The optoelectric device of claim 1 , wherein, when a majority of carriers generated by the quantum dot core comprises holes, a valence energy band level of the intermediate is higher than a valence energy band level of the quantum dot core.

14 . The optoelectric device of claim 2 , wherein a first electrode is provided at a first side of the matrix and a second electrode is provided at a second side of the matrix opposite to the first side.

15 . The optoelectric device of claim 14 , wherein a third electrode is provided on a bottom side of the matrix, the bottom side being different from the first side and the second side, and
wherein an insulating layer is provided between the matrix and the third electrode.

16 . A quantum dot structure comprising:
a quantum dot core comprising a first material having a first valence band level and a first conduction band level; and a surface layer partially covering a surface of the quantum dot core, the surface layer comprising a second material having a second valence band level and a second conduction band level, wherein the first valence band level is less than the second valence band level or the first conduction band level is greater than the second conduction band level.

17 . The quantum dot structure of claim 16 , wherein the first valence band level is less than the second valence band level.

18 . The quantum dot structure of claim 16 , wherein the first conduction band level is greater than the second conduction band level.

19 . The quantum dot structure of claim 16 , wherein a ratio of an area of a portion of the surface of the quantum dot core covered by the surface layer to an entire area of the surface of the quantum dot core is in a range of 0.001-0.5.

20 . The quantum dot structure of claim 16 , wherein a ratio of an area of a portion of the surface of the quantum dot core covered by the surface layer to an entire area of the surface of the quantum dot core is in a range of 0.001-0.3.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyungsang

Classifications

• H10F77/12

  Active materials · CPC title

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

• H10F77/20

  Electrodes · CPC title

• H10F77/1433 Primary

  Quantum dots · CPC title