Imaging Method and Apparatus

Patent metadata

Field	Value
Publication number	US-2021126025-A1
Application number	US-201816617349-A
Country	US
Kind code	A1
Filing date	May 31, 2018
Priority date	May 31, 2017
Publication date	Apr 29, 2021
Grant date	—

Abstract

An imaging apparatus and method, the apparatus comprising: a semiconductor die; a photosensitive array of photodiodes and single photon avalanche diodes (SPADs), the photodiodes comprising reverse biased diodes; and a front-end circuit coupled to the photosensitive array; and an output for outputting image data from the front-end circuit. The photosensitive array and the front-end circuit are provided in the semiconductor die.

First claim

1 . An imaging apparatus, comprising:
a semiconductor die; a photosensitive array of photodiodes and single photon avalanche diodes (SPADs), the photodiodes comprising reverse biased diodes; and a front-end circuit coupled to the photosensitive array; and an output for outputting image data from the front-end circuit; wherein the photosensitive array and the front-end circuit are provided in the semiconductor die.

2 . (canceled)

3 . The imaging apparatus as claimed in claim 1 , wherein the photodiodes and the SPADs are arranged in an integrated manner in the semiconductor die or wherein the photodiodes and the SPADs are arranged in alternating rows in the semiconductor die or wherein the photodiodes alternate with the SPADs in rows in the semiconductor die.

4 - 5 . (canceled)

6 . The imaging apparatus as claimed in claim 1 , wherein the photodiodes have an average density in the semiconductor die of approximately 200 per square millimetre and/or the SPADs have an average density in the semiconductor die of approximately 150 per square millimetre.

7 . (canceled)

8 . The imaging apparatus as claimed in claim 1 , wherein the photodiodes are high speed photodiodes.

9 . The imaging apparatus as claimed in claim 1 , further comprising an electric power converter, an auto-bias and/or a temperature sensor.

10 . The imaging apparatus as claimed in claim 1 , wherein the front-end circuit comprises one or more of:
i) a timer for timing the detection of photons, ii) a photon counter for counting photons detected by the SPADs, iii) an avalanche quencher for halting avalanche multiplication of carriers in the SPADs, iv) a reset circuit for resetting the SPADs after detection events, v) a data serialiser for moving data out of the photosensitive array, vi) an asynchronous event detector for detecting asynchronous changes in intensity in photons detected by the photodiodes, vii) an intensity detector for determining instantaneous intensity of photons detected by the photodiodes, viii) an integrated intensity detector measuring average intensity in photons detected by the photodiodes, and ix) an analog to digital converter for directly converting photodiode voltage to a digital signal.

11 . The imaging apparatus as claimed in claim 1 , wherein the front-end circuit comprises a timer for timing the detection of photons and a photon counter for counting photons detected by the SPADs, and is configured to determine time of flight based on outputs of the timer and the photon counter.

12 . The imaging apparatus as claimed in claim 1 , wherein the apparatus is configured for acquiring hyperspectral 3D images.

13 . The imaging apparatus as claimed in claim 1 , comprising a lens train or a single lens for focusing incident light to an image on the photosensitive array.

14 . (canceled)

15 . The imaging apparatus as claimed in claim 1 , wherein the front-end circuit implements analogue to digital converters (ADCs) for the photodiodes.

16 . The imaging apparatus as claimed in claim 1 , further comprising one or more microlenses located over some or all of the photodiodes and the SPADs to increase effective photosensitive area.

17 . The imaging apparatus as claimed in claim 1 , further comprising a wavelength selective filer located in the optical path to modify an incident photon spectrum.

18 . The imaging apparatus as claimed in claim 1 , wherein the photodiodes and the SPADs are configured to be simultaneously independently operated in different modes.

19 . The imaging apparatus as claimed in claim 1 , wherein either:
the SPADs are configured to capture time of flight depth data using an illumination source; and/or the SPADs are configured to capture intensity image data using a photon counting mode, and the photodiodes are configured to capture intensity image data simultaneously.

20 . (canceled)

21 . The imaging apparatus as claimed in claim 1 , wherein the photosensitive array and the front-end circuit are provided on the same side of the semiconductor die with the photosensitive and the front-end circuit array substantially facing the direction of the incident light or wherein the photosensitive array and the front-end circuit are provided on opposite faces of the semiconductor die with the photosensitive array substantially facing the direction of the incident light.

22 . (canceled)

23 . An imaging method, comprising:
collecting light with a photosensitive array of photodiodes and single photon avalanche diodes (SPADs) of the apparatus of claim 1 ; and outputting image data from the front-end circuit; wherein the photosensitive array and the front-end circuit are provided in a semiconductor die.

24 . An imaging method, comprising:
collecting, using the apparatus of claim 1 , time of flight data using the plurality of single photon avalanche diodes (SPADs), and simultaneously capturing image intensity data using the plurality of photodiodes; and outputting the 3D image data from a front-end circuit.

25 . An imaging method, comprising:
collecting, using the apparatus of claim 1 , image intensity data using a photon counting mode of the plurality of single photon avalanche diodes (SPADs) and simultaneously capturing image intensity data using the plurality of photodiodes; and outputting the image data from a front-end circuit.

26 . A method of forming an imaging apparatus comprising:
forming, in a semi-conductor die, a photosensitive array of photodiodes and single photon avalanche diodes (SPADs), the photodiodes comprising reverse biased diodes; and forming, in the semiconductor die, a front-end circuit coupled to the photosensitive array, the front-end circuit having an output for outputting image data from the front-end circuit.

27 . The method as claimed in claim 26 , comprising arranging the photodiodes and the SPADs in an integrated manner in the semiconductor die and either: arranging the photodiodes and the SPADs in alternating rows in the semiconductor die; or arranging the photodiodes to alternate with the SPADs in rows in the semiconductor die.

28 . (canceled)

29 . (canceled)

Assignees

• Univ Monash

Inventors

• Kennedy Simon
• Morrison Daniel
• Redoute Jean-Michel
• Yuce Mehmet Rasit

Classifications

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F39/8033 Primary

  Photosensitive area · CPC title