Methods utilizing active quantum chemistry
US-2024317612-A1 · Sep 26, 2024 · US
US2021115578A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021115578-A1 |
| Application number | US-201916660160-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 22, 2019 |
| Priority date | Oct 22, 2019 |
| Publication date | Apr 22, 2021 |
| Grant date | — |
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A CoVO x composite electrode and method of making is described. The composite electrode comprises a substrate with an average 0.5-5 μm thick layer of CoVO x having pores with average diameters of 2-200 nm. The method of making the composite electrode involves contacting the substrate with an aerosol comprising a solvent, a cobalt complex, and a vanadium complex. The CoVO x composite electrode is capable of being used in an electrochemical cell for water oxidation.
Opening claim text (preview).
1 : A composite thin film electrode, comprising: a CoVO x layer having an average thickness of 500 nm-5 μm in contact with a substrate, wherein the CoVO x layer comprises amorphous CoVO x having a Co:V molar ratio in a range of 1.0:1.2-1.5:1.0, and wherein the substrate is a transparent conducting film. 2 : The composite thin film electrode of claim 1 , wherein the CoVO x layer is porous with a pore size in a range of 2-10 nm. 3 : The composite thin film electrode of claim 1 , which has an electrochemically active surface area in a range of 12-22 mF/cm 2 . 4 : The composite thin film electrode of claim 1 , wherein the CoVO x layer consists essentially of amorphous CoVO x . 5 : The composite thin film electrode of claim 1 , wherein the CoVO x layer has an O:Co molar ratio in a range of 4:1 to 9:1. 6 : The composite thin film electrode of claim 1 , wherein the transparent conducting film is selected from the group consisting of fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium zinc oxide, indium zinc tin oxide, indium aluminum zinc oxide, indium gallium zinc oxide, indium gallium tin oxide, and antimony tin oxide. 7 : A method of making the composite thin film electrode of claim 1 , the method comprising: contacting an aerosol with the substrate to deposit the CoVO x layer to form the composite thin film electrode, wherein the aerosol comprises a carrier gas, and a cobalt complex and a vanadium complex dissolved in a solvent, and wherein the substrate has a temperature in a range of 450-550° C. during the contacting. 8 : The method of claim 7 , wherein the cobalt complex and the vanadium complex each independently comprise at least one ligand selected from the group consisting of acetylacetonate, acetate ligand, trifluoroacetate, isopropanol, and tetrahydrofuran. 9 : The method of claim 7 , wherein the cobalt complex is Co(II) acetylacetonate, and the vanadium complex is V(III) acetylacetonate. 10 : The method of claim 7 , wherein before the contacting, the aerosol consists essentially of the carrier gas, the cobalt complex, the vanadium complex, and the solvent. 11 : The method of claim 7 , wherein a weight ratio of the cobalt complex to the solvent in the aerosol, and/or a weight ratio of the vanadium complex to the solvent in the aerosol is in a range of 1:1,000-1:5. 12 : The method of claim 7 , wherein the aerosol is contacted with the substrate for a time period of 10-30 min. 13 : The method of claim 7 , wherein during the contacting, the carrier gas has a flow rate in a range of 20-250 cm 3 /min. 14 : An electrochemical cell, comprising: the composite thin film electrode of claim 1 ; a counter electrode; and an electrolyte solution in contact with both electrodes. 15 : The electrochemical cell of claim 14 , wherein the composite thin film electrode has an overpotential in a range of 270-335 mV at a current density of 9-11 mA/cm 2 . 16 : The electrochemical cell of claim 14 , wherein the composite thin film electrode has a current density of 1.0-10.0 mA/cm 2 when the electrodes are subjected to a bias potential of 1.45-1.55 V. 17 : The electrochemical cell of claim 14 , wherein the electrolyte solution comprises water and an inorganic base having a concentration of 0.1-1.0 M. 18 : The electrochemical cell of claim 14 , wherein the composite thin film electrode has a mass activity in range of 38-50 A/g at a potential of 350 mV. 19 : A method for decomposing water into H 2 and O 2 , the method comprising: subjecting the electrodes of the electrochemical cell of claim 14 with a potential of 0.5-2.0 V. 20 : The method of claim 19 , further comprising separately collecting H 2 -enriched gas and O 2 -enriched gas.
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