High temperature oxide-based system for thermoelectric sensor applications

Patent metadata

Field	Value
Publication number	US-2021098675-A1
Application number	US-202017038736-A
Country	US
Kind code	A1
Filing date	Sep 30, 2020
Priority date	Sep 30, 2019
Publication date	Apr 1, 2021
Grant date	—

Abstract

Disclosed herein are embodiments of n and p-type components with high temperature refractory material having a perovskite crystal structure. The material may be doped to generate, for example, p-type and n-type sensor legs. In some embodiments, expensive materials may be avoided. Further, the disclosed materials can avoid high temperature reaction between n-type components and p-type components.

First claim

What is claimed is:

1 . A thermoelectric system for high-temperature applications comprising:
a p-type material formed from LnAlO 3 and doped with strontium and cobalt and having a perovskite structure; and an n-type material formed from LnAlO 3 doped with manganese and niobium and having a perovskite structure.

2 . The thermoelectric system of claim 1 wherein the system does not contain platinum.

3 . The thermoelectric system of claim 1 wherein the system does not contain indium tin oxide.

4 . The thermoelectric system of claim 1 wherein the p-type material is Ln 1-x SrAl 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1.

5 . The thermoelectric system of claim 1 wherein the n-type material is LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1.

6 . The thermoelectric system of claim 1 wherein the n-type material and p-type material are generally unreactive at high temperatures of 400-1200° C.

7 . The thermoelectric system of claim 1 wherein Ln is selected from the group consisting of La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y, Yb, and Lu.

8 . A thermal sensor comprising:
a p-type sensor leg formed from LnAlO 3 doped with strontium and cobalt and having a perovskite structure; an n-type sensor leg formed from LnAlO 3 doped with manganese and niobium and having a perovskite structure; and a voltmeter configured to measure a voltage differential between the p-type sensor leg and the n-type sensor leg.

9 . The thermal sensor of claim 8 wherein the sensor does not contain platinum.

10 . The thermal sensor of claim 8 wherein the sensor does not contain indium tin oxide.

11 . The thermal sensor of claim 8 wherein the p-type sensor leg includes Ln 1-x SrAl 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1.

12 . The thermal sensor of claim 8 wherein the n-type sensor leg includes LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1.

13 . The thermal sensor of claim 8 wherein the sensor is configured for high temperature applications of 400-1200° C. without significant sensing degradation.

14 . The thermal sensor of claim 8 wherein Ln is selected from the group consisting of La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y, Yb, and Lu.

15 . A method of manufacturing a thermoelectric system, the method comprising:
solid state reacting oxide precursor materials to form a LnAlO 3 p-type material doped with strontium and cobalt and a LnAlO 3 n-type material doped with manganese and niobium; spray drying the p-type and n-type materials into p-type and n-type granules; sintering the p-type and n-type granules into p-type and n-type agglomerates; plasma spraying the p-type agglomerates onto a substrate to form a p-type sensor leg having a perovskite crystal structure; and plasma spraying the n-type agglomerations onto the substrate to form an n-type sensor leg having a perovskite crystal structure.

16 . The method of claim 15 further including connecting the n-type sensor leg and the p-type sensor leg to a voltmeter.

17 . The method of claim 15 wherein the system does not contain platinum or indium tin oxide.

18 . The method of claim 15 wherein the p-type material is Ln 1-x SrAl 1-y Co y O 3+/−z , x being between 0 and 1, y being between 0 and 1, and z<1.

19 . The method of claim 15 wherein the n-type material is LnAl 1-x-y Mn y Nb x O 3+/−z , x being between 0 and 0.2, y being between 0 and 1, and z<1.

20 . The method of claim 15 wherein the n-type and p-type components are generally unreactive at high temperatures of 400-1200° C.

Assignees

• Skyworks Solutions Inc

Inventors

• Hill Michael David

Classifications

• C01G51/68

  containing rare earths, e.g. (La0.3Sr0.7)CoO3 · CPC title

• H10N10/855 Primary

  comprising compounds containing boron, carbon, oxygen or nitrogen · CPC title

• G01K7/02

  using thermoelectric elements, e.g. thermocouples · CPC title

• C01G45/1264

  containing rare earths, e.g. (La1-xCax)MnO3 or LaMnO3 · CPC title

• C01P2002/34

  perovskite-type (ABO3) · CPC title