Detection device for micro-led and manufacturing method thereof, and detection apparatus for micro-led

Patent metadata

Field	Value
Publication number	US-2021098646-A1
Application number	US-202016855351-A
Country	US
Kind code	A1
Filing date	Apr 22, 2020
Priority date	Sep 27, 2019
Publication date	Apr 1, 2021
Grant date	—

Abstract

The present disclosure provides a detection device for Micro-LED and a method manufacturing thereof, and a detection apparatus for Micro-LED, and the detection device for Micro-LED comprises: a substrate, and a first via and a second via penetrating through the substrate; the substrate comprises a first surface and a second surface which are opposite to each other; the first via and the second via are respectively arranged corresponding to a first pole and a second pole of a Micro-LED to be detected, and the detection device for Micro-LED further comprises: a first detection component and a second detection component on the first surface of the substrate.

First claim

What is claimed is:

1 . A detection device for Micro-LED, comprising:
a substrate, which has a first via and a second via penetrating therethrough, and a first surface and a second surface which are opposite to each other, wherein the first via and the second via correspond to a first pole and a second pole of a Micro-LED to be detected, respectively; and a first detection component and a second detection component on the first surface of the substrate, wherein, the first detection component comprises: a first electrode, a second electrode between the first electrode and the first via, and a third electrode fixedly coupled to the first electrode, on the first surface of the substrate; the third electrode comprises: a first fixed portion, a first cantilever beam portion, and a first movable portion, wherein a first end of the first cantilever beam portion is fixedly coupled to the first electrode through the first fixed portion, the first cantilever beam portion extends to the first via and is coupled to the first movable portion through a second end of the first cantilever beam portion such that the first movable portion is suspended in the first via, and a first preset distance originally exists between the first cantilever beam portion and the second electrode before detection of the micro LED; the second detection component comprises: a fourth electrode, a fifth electrode between the fourth electrode and the second via, and a sixth electrode fixedly coupled to the fourth electrode, on the first surface of the substrate; the sixth electrode comprises: a second fixed portion, a second cantilever beam portion, and a second movable portion, wherein a first end of the second cantilever beam portion is fixedly coupled to the fourth electrode through the second fixed portion, and the second cantilever beam portion extends to the second via and is coupled to the second movable portion through a second end of the second cantilever beam portion such that the second movable portion is suspended in the second via, and a second preset distance originally exists between the second cantilever beam portion and the fifth electrode before detection of the micro LED.

2 . The detection device for Micro-LED of claim 1 , further comprising: a first fixed electrode at a side of the first electrode distal to the second electrode, a second fixed electrode at a side of the fourth electrode distal to the fifth electrode, a third fixed electrode between the first via and the second via, and a protection cover coupled to at least one of the first fixed electrode, the second fixed electrode and the third fixed electrode;
wherein a connection end of the protection cover are bonded to the at least one of the first fixed electrode, the second fixed electrode, and the third fixed electrode.

3 . The detection device for Micro-LED of claim 2 , wherein the first electrode, the second electrode, the fourth electrode, the fifth electrode, the first fixed electrode, the second fixed electrode, and the third fixed electrode are arranged in a same layer.

4 . The detection device for Micro-LED of claim 3 , wherein a material of the first electrode, the second electrode, the fourth electrode, the fifth electrode, the first fixed electrode, the second fixed electrode, and the third fixed electrode comprises: aluminum;
a material of the connection end of the protection cover comprises: germanium.

5 . The detection device for Micro-LED of claim 4 , further comprising: a planarization layer on the first electrode, the second electrode, the fourth electrode, the fifth electrode, the first fixed electrode, the second fixed electrode, and the third fixed electrode; and a buffer layer on the second surface of the substrate; wherein
the first via penetrates through the planarization layer and the buffer layer; and the second via penetrates through the planarization layer and the buffer layer.

6 . The detection device for Micro-LED of claim 5 , wherein the buffer layer has a thickness less than the first preset distance and less than the second preset distance.

7 . The detection device for Micro-LED of claim 1 , wherein a material of the first fixed portion, the first cantilever beam portion, and the first movable portion of the third electrode comprises: silver or copper;
a material of the second fixed portion, the second cantilever beam portion, and the second movable portion of the sixth electrode comprise: silver or copper.

8 . The detection device for Micro-LED of claim 1 , wherein the substrate comprises glass.

9 . The detection device for Micro-LED of claim 1 , wherein the first via and the second via each have a size smaller than that of each of the first pole and the second pole of the Micro-LED, and a distance between the first via and the second via is equal to that between the first pole and the second pole of the Micro-LED.

10 . A detection apparatus for Micro-LED, comprising a plurality of detection devices for Micro-LED, each of which is the detection device for Micro-LED of claim 1 , wherein the plurality of detection devices for Micro-LED correspond to a plurality of Micro-LEDs to be tested one by one.

11 . The detection apparatus for Micro-LED of claim 10 , wherein the plurality of detection devices for Micro-LED are distributed in an array.

12 . A method for manufacturing a detection device for Micro-LED comprising:
forming a first via and a second via in a substrate to penetrate therethrough, wherein the substrate comprises a first surface and a second surface which are opposite to each other; and the first via and the second via correspond to a first pole and a second pole of a Micro-LED to be detected, respectively; forming a first electrode, a second electrode, a fourth electrode and a fifth electrode on the first surface of the substrate through a single patterning process, wherein the second electrode is between the first electrode and the first via, and the fifth electrode is between the fourth electrode and the second via; forming a third electrode and a sixth electrode through an electroplating process; wherein, the third electrode comprises: a first fixed portion, a first cantilever beam portion, and a first movable portion, wherein a first end of the first cantilever beam portion is fixedly coupled to the first electrode through the first fixed portion, the first cantilever beam portion extends to the first via and is coupled to the first movable portion through a second end of the first cantilever beam portion such that the first movable portion is suspended in the first via, and a first preset distance originally exists between the first cantilever beam portion and the second electrode before detection of the micro LED; and the sixth electrode comprises: a second fixed portion, a second cantilever beam portion, and a second movable portion, wherein a first end of the second cantilever beam portion is fixedly coupled to the fourth electrode through the second fixed portion, and the second cantilever beam portion extends to the second via and is coupled to the second movable portion through a second end of the second cantilever beam portion such that the second movable portion is suspended in the second via, and a second preset distance originally exists between the second cantilever beam portion and the fifth electrode before detection of the micro LED.

13 . The method for manufacturing a detection device for Micro-LED of claim 12 , wherein the forming the first electrode, the second electrode, the fourth electrode and the fifth electrode on the first surface of the substrate through a single patterning process comprises:
filling a resin materi

Assignees

• Boe Technology Group Co Ltd

Inventors

• Liang Zhiwei
• Luo Wenqian
• Jiao Shibo
• Wang Feng
• Liu Yingwei

Classifications

• H10W90/00

  Package configurations · CPC title

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/207 Primary

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/0364

  of interconnections · CPC title