Optical thin film for meta-surface and meta-optical device including the same

Patent metadata

Field	Value
Publication number	US-2021088694-A1
Application number	US-202016789675-A
Country	US
Kind code	A1
Filing date	Feb 13, 2020
Priority date	Sep 24, 2019
Publication date	Mar 25, 2021
Grant date	—

Abstract

An optical thin film includes a support layer and a dielectric layer on the support layer. The dielectric layer has a refractive index greater than that of the support layer. The dielectric layer includes a compound ADX, which includes a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than an atomic weight of A or D. The optical thin film may exhibit light transmission having a high refractive index and low absorptivity.

First claim

What is claimed is:

1 . An optical thin film comprising:
a support layer; and a dielectric layer on the support layer, wherein the dielectric layer has a refractive index that is greater than a refractive index of the support layer, the dielectric layer includes a compound ADX, the compound ADX includes a Group 3 element A, a Group 5 element D, an element X having an atomic weight that is smaller than an atomic weight of A or D.

2 . The optical thin film of claim 1 , wherein
the compound ADX includes GaPX or AlAsX.

3 . The optical thin film of claim 1 , wherein X is Al, N, P, or O.

4 . The optical thin film of claim 1 , wherein
the compound ADX includes GaN a P 1-a (wherein 0<a<1) or Al a Ga 1-a P (wherein 0<a<1).

5 . The optical thin film of claim 1 , wherein
the compound ADX includes AlAs 1-b Y b (wherein 0<b<1), and Y is P or N.

6 . The optical thin film of claim 1 , wherein the compound ADX includes GaP a O b (wherein 0<a<1 and 0<b<1) or AlAs a O b (wherein 0<a<1 and 0<b<1).

7 . The optical thin film of claim 1 , wherein the compound ADX includes GaN a P b O c (wherein 0<a, b, c<1) or Al a Ga 1-a P b O c (wherein 0<a, b, c<1).

8 . The optical thin film of claim 1 , wherein
the compound ADX includes AlAs 1-b Y b (wherein 0<b<1), and Y is P or N.

9 . The optical thin film of claim 1 , wherein
the compound ADX includes AlAs a Y b O c (wherein 0<a, b, c<1), and Y is P or N.

10 . The optical thin film of claim 1 , wherein
the compound ADX includes Al x Ga y N z P w (wherein x+y=z+w and 0<x, y, z, w<1), Ga x As y N z P w (wherein x=y+z+w and 0<x, y, z, w<1), Al x As y N z P w (wherein x=y+z+w and 0<x, y, z, w<1), Al x Ga y As z N w (wherein x+y=z+w and 0<x, y, z, w<1), Al x Ga y As z P w (wherein x+y=z+w and 0<x, y, z, w<1), or Al x Ga y As z N w P v (wherein x+y=z+w+v).

11 . The optical thin film of claim 1 , wherein the compound ADX includes Al x Ga y N z P w O v (wherein 0<x, y, z, w, v<1), Ga x As y N z P w O v (wherein 0<x, y, z, w, v<1), Al x As y N z P w O v (wherein 0<x, y, z, w, v<1), Al x Ga y As z N w O v (wherein 0<x, y, z, w, v<1), Al x Ga y As z P w O v (wherein 0<x, y, z, w, v<1), or Al x Ga y As z N w P v O u (wherein 0<x, y, z, w, v, u<1).

12 . The optical thin film of claim 1 , wherein,
in a compound AD including the Group 3 element A and the Group 5 element D of ADXa (wherein 0<a<1), element A and element D are set such that the compound AD has a refractive index of greater than 3.3 and an absorptivity of less than 0.05 for light in a visible wavelength range.

13 . The optical thin film of claim 1 , wherein
in the compound ADX, A, D, X, and a are set such that ADXa (wherein 0<a<1) has a refractive index of greater than 3 and an absorptivity of less than 3×10 −3 for light in a visible wavelength range.

14 . A meta-optical device comprising:
a support layer; and a plurality of nanostructures located on the support layer and arranged to form a shape distribution that changes a phase of incident light according to a desired rule according to positions, the plurality of nanostructures each including a compound ADX, the compound ADX including a Group 3 element A, a Group 5 element D, and an element X having an atomic weight smaller than that of A or D, and the plurality of nanostructures having a shape dimension smaller than a wavelength of the incident light.

15 . The meta-optical device of claim 14 , wherein the compound ADX includes GaPX or AlAsX.

16 . The meta-optical device of claim 14 , wherein X is Al, N, P, or O.

17 . The meta-optical device of claim 14 , wherein the compound ADX includes GaN a P 1-a (wherein 0<a<1), Al a Ga 1-a P (wherein 0<a<1), AlAs 1-b P b (wherein 0<b<1), or AlAs 1-b N b (wherein 0<b<1).

18 . The meta-optical device of claim 14 , wherein the compound ADX includes GaP a O b (wherein 0<a<1 and 0<b<1), AlAs a O b (wherein 0<a<1 and 0<b<1), GaN a P b O c (wherein 0<a, b, c<1), AlGa a P b O c (wherein 0<a, b, c<1), AlAs a P b O c (wherein 0<a, b, c<1), or AlAs a N b O c (wherein 0<a, b, c<1).

19 . The meta-optical device of claim 14 , wherein the wavelength of the incident light is in a range of about 300 nm to about 1,000 nm.

20 . The meta-optical device of claim 14 , wherein the plurality of nanostructures each have a cylindrical shape, a polygonal column shape, or a stripe shape.

21 . The meta-optical device of claim 14 , further comprising:
a protective layer formed of a material having a refractive index smaller than a refractive index of the compound ADX, wherein the protective layer covers the plurality of nanostructures.

22 . The meta-optical device of claim 14 , wherein the plurality of nanostructures are arranged as a plurality of layers spaced apart from the support layer by different distances.

23 . The meta-optical device of claim 14 , wherein a shape distribution of the plurality of nanostructures is set such that the meta-optical device is configured to function as a lens, a beam deflector, a beam splitter, a resonator, or a color filter.

24 . An electronic device comprising:
the meta-optical device of claim 14 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jeongyub
• Lee Changseung
• Bae Kideok
• Cho Eunhyoung

Classifications

• G02B5/1809

  with pitch less than or comparable to the wavelength · CPC title

• C01G28/00

  Compounds of arsenic · CPC title

• C01G15/00

  Compounds of gallium, indium or thallium · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G02B1/002 Primary

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title