Optoelectronic component with current deflected to high-gain paths

Patent metadata

Field	Value
Publication number	US-2021083138-A1
Application number	US-202016949723-A
Country	US
Kind code	A1
Filing date	Nov 12, 2020
Priority date	Dec 20, 2018
Publication date	Mar 18, 2021
Grant date	—

Abstract

A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

First claim

1 . (canceled)

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9 . (canceled)

10 . A computing or communication device comprising;
a three-terminal avalanche photodiode with separate absorbing and amplifying regions and an insulating layer positioned between the absorbing region and a leakage path; and a first electronic module receiving a signal from the avalanche photodiode.

11 . The computing or communication device of claim 10 , wherein the first electronic module comprises at least one of an input/output interface, a processor, a data store, a dynamic memory, or a communications link.

12 . The computing or communication device of claim 10 , wherein the avalanche photodiode directly senses light from a source outside the device.

13 . The computing or communication device of claim 10 , wherein the avalanche photodiode is incorporated in an integrated optical module.

14 . The computing or communication device of claim 13 , wherein the integrated optical module comprises at least one of an input/output interface, a processor, a data store, a dynamic memory, or a communications link.

15 . The computing or communication device of claim 13 , wherein the integrated optical module comprises an internal light source.

16 . The computing or communication device of claim 15 , further comprising a second electronic module controlling the internal light source.

17 . The computing or communication device of claim 16 , wherein the avalanche photodiode receives light from the internal light source, and the signal corresponds to a characteristic of the light.

18 . (canceled) method of fabricating an optoelectronic component, the method comprising:
p-doping a semiconductor to form a first contact and a p-doped lateral boundary for an amplifying region; n-doping the semiconductor to form a second contact and an n-doped lateral boundary for an amplifying region; forming an insulating layer over the n-doped lateral boundary; forming an absorbing region over the p-doped lateral boundary, the n-doped lateral boundary, and the amplifying region; p-doping the absorbing region to form a third contact ; and forming connections to the first contact, the second contact, and the third contact.

19 . (canceled)

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Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Zeng Xiaoge
• Huang Zhihong
• Liang Di

Classifications

• H10F71/121

  The active layers comprising only Group IV materials · CPC title

• H10F77/14

  Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies · CPC title

• H10F30/2255 Primary

  in which the active layers form heterostructures, e.g. SAM structures · CPC title

• H10F30/225 Primary

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• Y02P70/50

  Manufacturing or production processes characterised by the final manufactured product · CPC title