Organic light emitting diode display device and a manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2021057504-A1
Application number	US-202016894953-A
Country	US
Kind code	A1
Filing date	Jun 8, 2020
Priority date	Aug 19, 2019
Publication date	Feb 25, 2021
Grant date	—

Abstract

An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

First claim

What is claimed is:

1 . An organic light emitting diode display, comprising:
a substrate; a thin film transistor disposed on the substrate; a planarization layer disposed on the thin film transistor; a pixel electrode disposed on the planarization layer, wherein the pixel electrode includes an upper layer and a lower layer including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer disposed on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition disposed on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer disposed on the upper surface of the pixel electrode in an area where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode disposed on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

2 . The organic light emitting diode display of claim 1 , wherein
the partition includes an organic material.

3 . The organic light emitting diode display of claim 1 , wherein
the upper layer and the lower layer of the pixel electrode include a poly-indium tin oxide or an indium tin oxide.

4 . The organic light emitting diode display of claim 1 , wherein
a thickness of the upper layer of the pixel electrode is 70 Å to 120 Å.

5 . The organic light emitting diode display of claim 1 , wherein
the etch stop layer includes a compound having low reactivity with a fluorine-based gas.

6 . The organic light emitting diode display of claim 5 , wherein
the etch stop layer includes an indium gallium zinc oxide.

7 . The organic light emitting diode display of claim 1 , wherein
the planarization layer includes at least one of a polyimide, a polyamide, an acrylic resin, benzocyclobutene, and a phenol resin.

8 . The organic light emitting diode display of claim 1 , wherein
the thin film transistor includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and the drain electrode is electrically connected to the pixel electrode.

9 . An organic light emitting diode display, comprising:
a substrate; a thin film transistor disposed on the substrate; a planarization layer disposed on the thin film transistor; a pixel electrode disposed on the planarization layer, wherein the pixel electrode include an upper layer, an intermediate layer, and a lower layer; an etch stop layer disposed on the pixel electrode to expose an upper surface of the pixel electrode; a partition disposed on the etch stop layer to expose the upper surface of the pixel electrode; an organic emission layer disposed on the upper surface of the pixel electrode, where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode disposed on the organic emission layer and the partition, wherein the intermediate layer of the pixel electrode includes silver, and the etch stop layer is disposed at an edge of the upper surface of the pixel electrode.

10 . The organic light emitting diode display of claim 9 , wherein
the upper layer and the lower layer of the pixel electrode include a poly-indium tin oxide or an indium tin oxide.

11 . The organic light emitting diode display of claim 9 , wherein
the partition includes an organic material.

12 . The organic light emitting diode display of claim 9 , wherein
the etch stop layer includes a compound having low reactivity with a fluorine-based gas.

13 . The organic light emitting diode display of claim 9 , wherein
the etch stop layer includes a material having a higher etching ratio than that of the pixel electrode.

14 . The organic light emitting diode display of claim 9 , wherein
the thin film transistor includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and the drain electrode is electrically connected to the pixel electrode.

15 . A manufacturing method of an organic light emitting diode display, the method comprising:
receiving a substrate on which a planarization layer is disposed on a thin film transistor; forming a pixel electrode material layer including an upper material layer, an intermediate material layer including silver, and a lower material layer on the planarization layer; forming an etch stop material layer including a compound having low reactivity with a fluorine-based gas on the upper material layer; forming an etch stop layer by first patterning the etch stop material layer; forming a pixel electrode including an upper layer, an immediate layer, and a lower layer by patterning the pixel electrode material layer; forming an inorganic material layer for a partition on the etch stop layer; forming the partition to expose an upper surface of the etch stop layer by patterning the inorganic material layer for the partition; forming the etch stop layer to expose the upper surface of the pixel electrode by second patterning the etch stop layer; forming an organic emission layer on an exposed portion of the upper surface of the pixel electrode; and forming a common electrode on the organic emission layer and the partition.

16 . The manufacturing method of claim 15 , wherein
the upper layer and the lower layer of the pixel electrode include a poly-indium tin oxide or an indium tin oxide.

17 . The manufacturing method of claim 15 , wherein
the forming of the partition is performed by dry etching.

18 . The manufacturing method of claim 17 , wherein
the etch stop layer is formed at an edge of the pixel electrode.

19 . The manufacturing method of claim 15 , wherein
the forming the etch stop layer is performed by wet etching.

20 . The manufacturing method of claim 19 , wherein
the etch stop layer includes a material having a higher etching ratio than that of the pixel electrode.

21 . An organic light emitting diode display, comprising:
a substrate; a thin film transistor disposed on the substrate; a planarization layer disposed on the thin film transistor; a pixel electrode disposed on the planarization layer, wherein the pixel electrode includes first, second and third layers stacked in sequence, wherein the first and third layers include a transparent conductive oxide and the second layer includes silver; an etch stop layer disposed on an upper surface of the pixel electrode; a partition disposed on the etch stop layer; an organic emission layer disposed on a portion of the upper surface of the pixel electrode adjacent to the etch stop layer and the partition; and a common electrode disposed on the organic emission layer and the partition, wherein the etch stop layer covers an edge of the pixel electrode.

22 . The organic light emitting diode display of claim 21 , wherein the etch stop layer covers a side surface of the pixel electrode.

Assignees

• Samsung Display Co Ltd

Inventors

• Ko Kyeong Su
• Park Joon Yong
• Baek Gyung Min
• Cho Hyun Min
• Choi Dae Won

Classifications

• H10K59/12

  Active-matrix OLED [AMOLED] displays · CPC title

• H10K71/00

  Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title

• H10K71/231

  by etching of existing layers · CPC title

• H10K59/87 Primary

  Passivation; Containers; Encapsulations · CPC title

• H10K59/873

  Encapsulations · CPC title