Tunable hyperbolic metamaterials

Patent metadata

Field	Value
Publication number	US-2021048558-A1
Application number	US-201916541876-A
Country	US
Kind code	A1
Filing date	Aug 15, 2019
Priority date	Aug 15, 2019
Publication date	Feb 18, 2021
Grant date	—

Abstract

An apparatus includes an array of metal nanowires embedded in a matrix of optically tunable material providing a tunable hyperbolic metamaterial, and a control circuit including (i) a current source coupled to first ends of the array of metal nanowires and (ii) a ground voltage coupled to second ends of the array of metal nanowires. The control circuit is configured to modify a state of the optically tunable material utilizing current supplied between the first and second ends of the array of metal nanowires to dynamically reconfigure optical properties of the tunable hyperbolic metamaterial.

First claim

What is claimed is:

1 . An apparatus comprising:
an array of metal nanowires embedded in a matrix of optically tunable material providing a tunable hyperbolic metamaterial; and a control circuit comprising (i) a current source coupled to first ends of the array of metal nanowires and (ii) a ground voltage coupled to second ends of the array of metal nanowires; wherein the control circuit is configured to modify a state of the optically tunable material utilizing current supplied between the first and second ends of the array of metal nanowires to dynamically reconfigure optical properties of the tunable hyperbolic metamaterial.

2 . The apparatus of claim 1 , wherein each of the metal nanowires in the array has a designated length, and wherein the tunable hyperbolic metamaterial provides a hyperbolic metamaterial antenna.

3 . The apparatus of claim 1 , wherein the tunable hyperbolic metamaterial provides an optical emitter having a designated cone of optical emission in response to an optical excitation, a width of the designated cone of optical emission being tunable by modifying the state of the optically tunable material.

4 . The apparatus of claim 1 , wherein the tunable hyperbolic metamaterial provides a refractive medium having a designated direction of refraction for beams incident on a surface of the tunable hyperbolic metamaterial, the designated direction of refraction being tunable by modifying the state of the optically tunable material.

5 . The apparatus of claim 1 , wherein the tunable hyperbolic metamaterial provides a hyperlens having a designated degree of magnification, the designated degree of magnification being tunable by modifying the state of the optically tunable material.

6 . The apparatus of claim 1 , wherein the array of metal nanowires comprises an array of carbon nanotubes.

7 . The apparatus of claim 1 , wherein the optically tunable material comprises a chalcogenide phase-change material, and wherein the control circuit is configured to modify the state of the optically tunable material by providing a current between the first and second ends of the metal nanowires to heat the chalcogenide phase-change material to change a phase of the chalcogenide phase-change material from one of crystalline and amorphous to the other one of crystalline and amorphous.

8 . A semiconductor structure comprising:
a substrate; a matrix of optically tunable material disposed over the substrate; an array of metal nanowires embedded in the matrix of optically tunable material; a current source coupled to first ends of the array of metal nanowires; and a ground voltage coupled to second ends of the array of metal nanowires; wherein the semiconductor structure provides a tunable hyperbolic metamaterial having one or more optical properties dynamically reconfigurable based on a state of the optically tunable material.

9 . The semiconductor structure of claim 8 , wherein the metal nanowires comprise carbon nanotubes.

10 . The semiconductor structure of claim 8 , wherein the optically tunable material comprises a chalcogenide phase-change material, and wherein the one or more optical properties of the tunable hyperbolic metamaterial are dynamically reconfigurable by heating the chalcogenide phase-change material to change the chalcogenide phase-change material between an amorphous and a crystalline phase.

11 . The semiconductor structure of claim 10 , wherein the chalcogenide phase-change material comprises at least one of germanium antinomy telluride, germanium telluride, antimony telluride and silver antimony telluride.

12 . The semiconductor structure of claim 8 , wherein the optically tunable material comprises a metal-insulator transition material.

13 . The semiconductor structure of claim 8 , where the optically tunable material intercalates within the array of metal nanowires.

14 . The semiconductor structure of claim 8 , wherein the optically tunable material surrounds the array of metal nanowires without intercalating the array of metal nanowires.

15 . The semiconductor structure of claim 8 , wherein each of the metal nanowires in the array of metal nanowires is oriented parallel to a top surface of the substrate.

16 . The semiconductor structure of claim 8 , wherein each of the metal nanowires in the array of metal nanowires is oriented perpendicular to a top surface of the substrate.

17 . A method comprising:
selecting a designated set of one or more optical properties of a tunable hyperbolic metamaterial, the tunable hyperbolic metamaterial comprising an array of metal nanowires embedded in a matrix of optically tunable material; and modifying a state of the optically tunable material utilizing current supplied between first and second ends of the array of metal nanowires to dynamically reconfigure the tunable hyperbolic metamaterial to have the designated set of one or more optical properties.

18 . The method of claim 17 , wherein the metal nanowires in the array comprise carbon nanotubes, and the optically tunable material comprises a chalcogenide phase-change material.

19 . The method of claim 18 , wherein the chalcogenide phase-change material comprises at least one of germanium antinomy telluride, germanium telluride, antimony telluride and silver antimony telluride.

20 . The method of claim 18 , wherein modifying the state of the optically tunable material comprises providing the current between the first and second ends of the array of metal nanowires to heat the chalcogenide phase-change material to change a phase of the chalcogenide phase-change material from one of crystalline and amorphous to the other one of crystalline and amorphous.

Assignees

• IBM

Inventors

• Falk Abram L
• Farmer Damon Brooks
• Rosenberg Jessie Carrigan

Classifications

• G02F2202/30

  Metamaterials · CPC title

• G02F1/0018

  Electro-optical materials · CPC title

• G02B1/002 Primary

  made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title

• H01L45/06

  Electricity · mapped topic

• H01L45/1213

  Electricity · mapped topic